- 1
- IRG4BC30FD1
- International Rectifier Corp.
- Insulated Gate Bipolar Transistor with Hyperfast Diode
- 10页
- 362K
- 2
- IRG4BC30FD
- International Rectifier Corp.
- Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
- 10页
- 412K
- 3
- IRG4BC30F
- International Rectifier Corp.
- Insulated Gate Bipolar Transistor
- 8页
- 167K
