- 1
- 2SC2669-Y
- Toshiba America, Inc.
- TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE(PCT PROCESS)
- 6页
- 329K
- 2
- 2SC2669-R
- Toshiba America, Inc.
- TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE(PCT PROCESS)
- 6页
- 329K
- 3
- 2SC2669-O
- Toshiba America, Inc.
- TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE(PCT PROCESS)
- 6页
- 329K
- 4
- 2SC2669
- Toshiba America, Inc.
- Transistor Silicon NPN Epitaxial Planar Type (PCT Process)
- 6页
- 329K
