• 2651
• PEF22822ELV2.2
• Infineon Technologies Corporation
• Digital Chip
• 2页
• 485K

• 2652
• PEF22822FV2.2
• Infineon Technologies Corporation
• Digital Chip
• 2页
• 485K

• 2653
• PEMB1
• Philips Semiconductors
• PNP Resistor-Equipped Transistors, R1 = 22 kohm, R2 = 22 kohm
• 8页
• 47K

• 2654
• PEMB10
• Philips Semiconductors
• PNP Resistor-Equipped Double Transistor R1 = 2.2 kohm, R2 = 47 kohm
• 8页
• 47K

• 2655
• PEMB11
• Philips Semiconductors
• PNP Resistor-Equipped Transistors, R1 = 10 kohm, R2 = 10 kohm
• 8页
• 47K

• 2656
• PEMB2
• Philips Semiconductors
• PNP Resistor-Equipped Double Transistor R1 = 47 kohm, R2 = 47 kohm
• 8页
• 55K

• 2657
• PEMB3
• Philips Semiconductors
• PNP Resistor-Equipped Double Transistor R1 = 4.7 kohm, R2 = open
• 8页
• 46K

• 2658
• PEMB4
• Philips Semiconductors
• PNP Resistor-Equipped Double Transistor R1 = 10 kohm, R2 = Open
• 8页
• 46K

• 2659
• PEMB9
• Philips Semiconductors
• PNP Resistor-Equipped Transistors R1 = 10 kohm, R2 = 47 kohm
• 8页
• 47K

• 2660
• PEMD10
• Philips Semiconductors
• NPN/PNP Resistor-Equipped Transistors, R1 = 2.2 Kohm, R2 = 47 kohm
• 8页
• 47K

• 2661
• PEMD12
• Philips Semiconductors
• NPN/PNP Resistor-Equipped Transistors
• 12页
• 66K

• 2662
• PEMD48
• Philips Semiconductors
• NPN/PNP Resistor-Equipped Transistors, R1, R2 = 47 kohm, 47 kohm and 2.2 kohm, 47 kohm
• 12页
• 68K

• 2663
• PEMD6
• Philips Semiconductors
• NPN/PNP Resistor-Equipped Transistors, R1 = 4.7 kohm, R2 = Open
• 8页
• 55K

• 2664
• PEMD9
• Philips Semiconductors
• NPN/PNP Resistor-Equipped Transistors, R1 = 10 kohm, R2 = 47 kohm
• 12页
• 67K

• 2665
• PEMH11
• Philips Semiconductors
• NPN Resistor-Equipped Transistors, R1 = 10 kohm, R2 = 10 kohm
• 8页
• 55K

• 2666
• PEMH13
• Philips Semiconductors
• NPN Resistor-Equipped Transistors, R1 = 4.7 kohm, R2 = 47 kohm
• 8页
• 56K

• 2667
• PEMH2
• Philips Semiconductors
• NPN Resistor-Equipped Transistors, R1 = 47 kohm, R2 = 47 kohm
• 8页
• 55K

• 2668
• PEMH4
• Philips Semiconductors
• NPN Resistor-Equipped Double Transistor R1 = 10 kohm, R2 = Open
• 8页
• 50K

• 2669
• PEMH7
• Philips Semiconductors
• NPN Resistor-Equipped Transistors, R1 = 4.7 kohm, R2 = Open
• 8页
• 50K

• 2670
• PEMH9
• Philips Semiconductors
• NPN Resistor-Equipped Transistors, R1 = 10 kohm, R2 = 47 kohm
• 8页
• 55K

• 2671
• PEMT1
• Philips Semiconductors
• PNP General Purpose Double Transistor
• 8页
• 46K

• 2672
• PET-1823
• Micro Electronics Corporation
• MODEM TRANSFORMER
• 2页
• 405K

• 2673
• PET-1825
• Micro Electronics Corporation
• MODEM TRANSFORMER
• 2页
• 405K

• 2674
• PET-1826
• Micro Electronics Corporation
• MODEM TRANSFORMER
• 2页
• 405K

• 2675
• PET-1901
• Micro Electronics Corporation
• MODEM TRANSFORMER
• 1页
• 267K

• 2676
• PET-1902
• Micro Electronics Corporation
• MODEM TRANSFORMER
• 1页
• 267K

• 2677
• PET-1903
• Micro Electronics Corporation
• MODEM TRANSFORMER
• 1页
• 267K

• 2678
• PF0
• Semtech International AG
• AXIALLEADED HERMETICALLY SEALED FAST RECTIFIER DIODE
• 4页
• 183K

• 2679
• PF00105A
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for AMPS Handy Phone
• 11页
• 96K

• 2680
• PF0030
• Renesas Technology America, Inc.
• MOS FET Power Amplifier
• 19页
• 89K

• 2681
• PF0032
• Renesas Technology America, Inc.
• MOS FET Power Amplifier
• 19页
• 89K

• 2682
• PF01410A
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for GSM Handy Phone
• 10页
• 40K

• 2683
• PF01411A
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for E-GSM Handy Phone
• 4页
• 33K

• 2684
• PF01411B
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for E-GSM Handy Phone
• 4页
• 27K

• 2685
• PF01412A
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for E-GSM Handy Phone
• 9页
• 45K

• 2686
• PF0311
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for VHF Band
• 11页
• 66K

• 2687
• PF0313
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for VHF Band
• 17页
• 97K

• 2688
• PF0314
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for VHF Band
• 17页
• 97K

• 2689
• PF0414A
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for DCS 1800 Handy Phone
• 9页
• 42K

• 2690
• PF0414B
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for DCS 1800 Handy Phone
• 4页
• 28K

• 2691
• PF0415A
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for PCS 1900 Handy Phone
• 5页
• 41K

• 2692
• PF08103B
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
• 18页
• 190K

• 2693
• PF08127B
• Renesas Technology America, Inc.
• MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
• 16页
• 183K

• 2694
• PF1000A-360
• Lambda Electronics Inc.
• Power Factor module
• 2页
• 161K

• 2695
• PF251
• Micro Commercial Components
• 25Amp Fast Recover Rectifier
• 2页
• 89K

• 2696
• PF252
• Micro Commercial Components
• 25Amp Fast Recover Rectifier
• 2页
• 89K

• 2697
• PF253
• Micro Commercial Components
• 25Amp Fast Recover Rectifier
• 2页
• 89K

• 2698
• PF254
• Micro Commercial Components
• 25Amp Fast Recover Rectifier
• 2页
• 89K

• 2699
• PF255
• Micro Commercial Components
• 25Amp Fast Recover Rectifier
• 2页
• 89K

• 2700
• PF256
• Micro Commercial Components
• 25Amp Fast Recover Rectifier
• 2页
• 89K