• 3651
• PGT20130
• Ericsson Microelectronics AB
• 1510 nm DFB Laser Supervisory Channel Applications
• 4页
• 172K

• 3652
• PGT20140
• Ericsson Microelectronics AB
• 1620 nm DFB Laser Supervisory Channel Applications
• 4页
• 173K

• 3653
• PGT20306
• Ericsson Microelectronics AB
• DFB/EA Laser Module 2.5 Gb/s Applications
• 4页
• 174K

• 3654
• PGT20326
• Ericsson Microelectronics AB
• DFB/EA Laser Module for 2.5 Gb/s Applications
• 4页
• 289K

• 3655
• PGT20327
• Ericsson Microelectronics AB
• DFB/EA Laser Module for 2.5 Gb/s Applications
• 4页
• 290K

• 3656
• PGT20404
• Ericsson Microelectronics AB
• DFB/EA Laser Module 10 Gb/s Applications
• 4页
• 170K

• 3657
• PGT20406
• Ericsson Microelectronics AB
• DFB/EA laser module 10 Gb/s applications
• 4页
• 129K

• 3658
• PGT60106
• Ericsson Microelectronics AB
• 1510 nm Transmitter Module for Supervisory Channel Applications
• 4页
• 115K

• 3659
• PGT60107
• Ericsson Microelectronics AB
• 1620 nm Transmitter Module for Supervisory Channel Applications
• 4页
• 124K

• 3660
• PH0810-15
• M/A-COM
• Wireless Power Transistor 15 Watts, 850-960 MHz
• 2页
• 30K

• 3661
• PH1090-175L
• M/A-COM
• Avionics Pulsed Power Transistor-175 Watts, 1030-1090 MHz, 250us Pulse, 10% Duty
• 2页
• 41K

• 3662
• PH202451
• YCL Electronics Corporation, Ltd.
• Dual 10/100Base Transformer module
• 1页
• 22K

• 3663
• PH2222A
• Philips Semiconductors
• NPN Switching Transistor
• 8页
• 51K

• 3664
• PH2226-50M
• M/A-COM
• Radar Pulsed Power Transistor, 5OW, l00us Pulse, 10% Duty 2.2-2.6 GHz
• 1页
• 92K

• 3665
• PH2323-1
• M/A-COM
• CW Power Transistor, 1 W 2.3 GHz
• 2页
• 147K

• 3666
• PH2323-14
• M/A-COM
• CW Power Transistor, 14W 2.3 GHz
• 2页
• 148K

• 3667
• PH2323-3
• M/A-COM
• CW Power Transistor, 3.5W 2.3 GHz
• 2页
• 114K

• 3668
• PH2323-5
• M/A-COM
• CW Power Transistor, 5W 2.3 GHz
• 2页
• 143K

• 3669
• PH270F2
• Nihon Inter Electronics Corp.
• FRD MODULE
• 2页
• 30K

• 3670
• PH2729-110M
• M/A-COM
• Radar Pulsed Power Transistor, 110W, 100us Pulse, 10% Duty 2.7 - 2.9 GHz
• 2页
• 156K

• 3671
• PH2731-20M
• M/A-COM
• Radar Pulsed Power Transistor, 2OW, l00us Pulse, 10% Duty 2.7-3.1 GHz
• 2页
• 148K

• 3672
• PH2731-5M
• M/A-COM
• Radar Pulsed Power Transistor, 5W, 1OOus Pulse, 10% Duty 2.7-3.1 GHz
• 2页
• 154K

• 3673
• PH2856-160
• M/A-COM
• Linear Accelerator Pulsed Power Transistor, 16OW, 12us Pulse, 10% Duty 2.856 GHz
• 2页
• 136K

• 3674
• PH2907A
• Philips Semiconductors
• PNP Switching Transistor
• 8页
• 50K

• 3675
• PH2920
• Philips Semiconductors
• N-Channel Enhancement Mode Field-Effect Transistor
• 12页
• 216K

• 3676
• PH2931-135S
• M/A-COM
• Radar Pulsed Power Transistor, 135W, 20us Pulse, 1% Duty 2.9-3.1 GHz
• 2页
• 150K

• 3677
• PH2931-20M
• M/A-COM
• Radar Pulsed Power Transistor, 20W, 100us Pulse, 10% Duty 2.9-3.1 GHz
• 2页
• 161K

• 3678
• PH2931-5M
• M/A-COM
• Radar Pulsed Power Transistor, 5W, 100us Pulse, 10% Duty 2.9-3.1 GHz
• 2页
• 163K

• 3679
• PH406001
• YCL Electronics Corporation, Ltd.
• 10/100Base TX Dual port Transformer
• 2页
• 22K

• 3680
• PH5330
• Philips Semiconductors
• N-Channel Enhancement Mode Field-Effect Transistor
• 12页
• 234K

• 3681
• PH5416
• Philips Semiconductors
• PNP High-Voltage Transistor
• 8页
• 49K

• 3682
• PH8230E
• Philips Semiconductors
• TrenchMOS Enhanced Logic Level FET
• 12页
• 232K

• 3683
• PH965C6
• Fuji Electric Holdings Co., Ltd.
• Low Loss Super High Speed Rectifier
• 3页
• 60K

• 3684
• PHA2731-140L
• M/A-COM
• Radar Pulsed Power Module, 140W, 300ms, 10% Duty 2.7 - 3.1 GHz
• 1页
• 84K

• 3685
• PHB101NQ03LT
• Philips Semiconductors
• Logic Level FET
• 13页
• 280K

• 3686
• PHB11N03LT
• Philips Semiconductors
• N-Channel TrenchMOS Transistor Logic Level FET
• 11页
• 107K

• 3687
• PHB11N06LT
• Philips Semiconductors
• N-channel TrenchMOS Transistor Logic Level FET
• 12页
• 114K

• 3688
• PHB125N06LT
• Philips Semiconductors
• TrenchMOS Transistor Logic Level FET
• 9页
• 58K

• 3689
• PHB125N06T
• Philips Semiconductors
• TrenchMOS Transistor Standard Level FET
• 8页
• 55K

• 3690
• PHB130N03T
• Philips Semiconductors
• TrenchMOS Transistor Standard Level FET
• 8页
• 52K

• 3691
• PHC20512
• Philips Semiconductors
• Complementary Enhancement Mode MOS Transistor
• 20页
• 124K

• 3692
• PHC21025
• Philips Semiconductors
• Complementary Enhancement Mode MOS Transistor
• 16页
• 130K

• 3693
• PHC2300
• Philips Semiconductors
• Complementary Enhancement Mode MOS Transistor
• 16页
• 105K

• 3694
• PHD101NQ03LT
• Philips Semiconductors
• Logic Level FET
• 13页
• 280K

• 3695
• PHD10N10E
• Philips Semiconductors
• PowerMOS Transistor
• 7页
• 60K

• 3696
• PHD11N03LT
• Philips Semiconductors
• N-Channel TrenchMOS Transistor Logic Level FET
• 11页
• 107K

• 3697
• PHD11N06LT
• Philips Semiconductors
• N-channel TrenchMOS Transistor Logic Level FET
• 12页
• 114K

• 3698
• PHD12N10E
• Philips Semiconductors
• PowerMOS Transistor
• 7页
• 61K

• 3699
• PHD24N03LT
• Philips Semiconductors
• N-Channel Enhancement Mode Field-Effect Transistor
• 13页
• 382K

• 3700
• PHD3055L
• Philips Semiconductors
• PowerMOS Transistor Logic Level FET
• 7页
• 54K