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- 951
- FS3SM-14A
- Mitsubishi Electric Corporation
- Nch POWER MOSFET
- 4页
- 42K
- 952
- FS3SM-16A
- Mitsubishi Electric Corporation
- Nch POWER MOSFET
- 4页
- 42K
- 953
- FS3SM-18A
- Mitsubishi Electric Corporation
- Nch POWER MOSFET
- 4页
- 42K
- 954
- FS3UM-10
- Mitsubishi Electric Corporation
- Nch POWER MOSFET HIGH-SPEED SWITCHING USE
- 4页
- 67K
- 955
- FS5UM-10
- Mitsubishi Electric Corporation
- Nch POWER MOSFET
- 4页
- 43K
- 956
- HCS27D/Sample
- Intersil Corporation
- Radiation Hardened Triple 3-Input NOR Gate
- 8页
- 181K
- 957
- HCS27DMSR
- Intersil Corporation
- Radiation Hardened Triple 3-Input NOR Gate
- 8页
- 181K
- 958
- HCS27HMSR
- Intersil Corporation
- Radiation Hardened Triple 3-Input NOR Gate
- 8页
- 181K
- 959
- HCS27K/Sample
- Intersil Corporation
- Radiation Hardened Triple 3-Input NOR Gate
- 8页
- 181K
- 960
- HCS27KMSR
- Intersil Corporation
- Radiation Hardened Triple 3-Input NOR Gate
- 8页
- 181K
- 961
- HCTS147D/Sample
- Intersil Corporation
- Radiation Hardened 10-to-4 Line Priority Encoder
- 10页
- 144K
- 962
- HCTS147DMSR
- Intersil Corporation
- Radiation Hardened 10-to-4 Line Priority Encoder
- 10页
- 144K
- 963
- HCTS147HMSR
- Intersil Corporation
- Radiation Hardened 10-to-4 Line Priority Encoder
- 10页
- 144K
- 964
- HCTS147K/Sample
- Intersil Corporation
- Radiation Hardened 10-to-4 Line Priority Encoder
- 10页
- 144K
- 965
- HCTS147KMSR
- Intersil Corporation
- Radiation Hardened 10-to-4 Line Priority Encoder
- 10页
- 144K
- 966
- HCTS27DMSR
- Intersil Corporation
- Radiation Hardened Triple 3-Input NOR Gate
- 8页
- 339K
- 967
- HCTS27HMSR
- Intersil Corporation
- Radiation Hardened Triple 3-Input NOR Gate
- 8页
- 339K
- 968
- HCTS27KMSR
- Intersil Corporation
- Radiation Hardened Triple 3-Input NOR Gate
- 8页
- 339K
- 969
- HGT1S3N60C3DS
- Fairchild Semiconductor
- 6 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diodes
- 8页
- 340K
- 970
- HGT1S3N60C3DS9A
- Fairchild Semiconductor
- 6 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diodes
- 8页
- 340K
- 971
- HGTP3N60C3D
- Fairchild Semiconductor
- 6 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diodes
- 8页
- 340K
- 972
- HI5667/6CA
- Intersil Corporation
- 8 Bit, 60 Msps A/D Converter with Internal Voltage Reference
- 10页
- 262K
- 973
- HI5667/6CB
- Intersil Corporation
- 8 Bit, 60 Msps A/D Converter with Internal Voltage Reference
- 10页
- 262K
- 974
- HI5767/2CA
- Intersil Corporation
- 10 Bit, 20 Msps A/D Converter with Internal Voltage Reference
- 13页
- 877K
- 975
- HI5767/2CB
- Intersil Corporation
- 10 Bit, 20 Msps A/D Converter with Internal Voltage Reference
- 13页
- 877K
- 976
- HI5767/2IA
- Intersil Corporation
- 10 Bit, 20 Msps A/D Converter with Internal Voltage Reference
- 13页
- 877K
- 977
- HI5767/4CA
- Intersil Corporation
- 10 Bit, 40 Msps A/D Converter with Internal Voltage Reference
- 13页
- 877K
- 978
- HI5767/4CB
- Intersil Corporation
- 10 Bit, 40 Msps A/D Converter with Internal Voltage Reference
- 13页
- 877K
- 979
- HI5767/6CA
- Intersil Corporation
- 10 Bit, 60 Msps A/D Converter with Internal Voltage Reference
- 13页
- 877K
- 980
- HI5767/6CB
- Intersil Corporation
- 10 Bit, 60 Msps A/D Converter with Internal Voltage Reference
- 13页
- 877K
- 981
- HI5767/6IB
- Intersil Corporation
- 10 Bit, 60 Msps A/D Converter with Internal Voltage Reference
- 13页
- 877K
- 982
- HN3C17FU
- Toshiba America, Inc.
- Transistor Silicon NPN Epitaxial Planar Type
- 1页
- 959K
- 983
- HS1-3282-8
- Intersil Corporation
- Special Bus Interface Devices
- 页
- K
- 984
- HS4-3282-8
- Intersil Corporation
- Special Bus Interface Devices
- 页
- K
- 985
- HS4-3282-9+
- Intersil Corporation
- Special Bus Interface Devices
- 页
- K
- 986
- HUF75639S3R4851
- Fairchild Semiconductor
- 56 A, 115 V, 0.025 ohm, N-Channel UltraFET Power MOSFET
- 10页
- 204K
- 987
- HUF75939P3
- Fairchild Semiconductor
- 22 A, 200 V, 0.125 ohm, N-Channel, UltraFET Power MOSFET
- 10页
- 195K
- 988
- HUF75939S3ST
- Fairchild Semiconductor
- 22 A, 200 V, 0.125 ohm, N-Channel, UltraFET Power MOSFET
- 10页
- 195K
- 989
- HUF75945G3
- Fairchild Semiconductor
- 38 A, 200 V, 0.071 ohm, N-Channel, UltraFET Power MOSFET
- 10页
- 209K
- 990
- HUF75945P3
- Fairchild Semiconductor
- 38 A, 200 V, 0.071 ohm, N-Channel, UltraFET Power MOSFET
- 10页
- 209K
- 991
- HUF75945S3ST
- Fairchild Semiconductor
- 38 A, 200 V, 0.071 ohm, N-Channel, UltraFET Power MOSFET
- 10页
- 209K
- 992
- HUF76407DK8
- Fairchild Semiconductor
- 3.5 A, 60 V, 0.105 ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
- 12页
- 262K
- 993
- HUF76407DK8T
- Fairchild Semiconductor
- 3.5 A, 60 V, 0.105 ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
- 12页
- 262K
- 994
- HUFA76407DK8
- Fairchild Semiconductor
- 3.5 A, 60 V, 0.105 ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
- 12页
- 263K
- 995
- HUFA76407DK8T
- Fairchild Semiconductor
- 3.5 A, 60 V, 0.105 ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
- 12页
- 263K
- 996
- HYM322035GS-50
- Infineon Technologies Corporation
- 2M x 32-Bit Dynamic RAM Module
- 10页
- 79K
- 997
- HYM322035GS-60
- Infineon Technologies Corporation
- 2M x 32-Bit Dynamic RAM Module
- 10页
- 79K
- 998
- HYM322035GS-70
- Infineon Technologies Corporation
- 2M x 32-Bit Dynamic RAM Module
- 10页
- 79K
- 999
- HYM322035S-50
- Infineon Technologies Corporation
- 2M x 32-Bit Dynamic RAM Module
- 10页
- 79K
- 1000
- HYM322035S-60
- Infineon Technologies Corporation
- 2M x 32-Bit Dynamic RAM Module
- 10页
- 79K