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晶控振荡器
NO.
IC型号
描述
厂家
页数
文件大小
5651
IDT71V2579SA85BQ
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5652
IDT71V2579SA85BQI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5653
IDT71V2579YS75BG
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5654
IDT71V2579YS75BQ
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5655
IDT71V2579YS75PF
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5656
IDT71V2579YS80BG
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5657
IDT71V2579YS80BGI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5658
IDT71V2579YS80BQ
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5659
IDT71V2579YS80BQI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5660
IDT71V2579YS80PF
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5661
IDT71V2579YS80PFI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5662
IDT71V2579YS85BG
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5663
IDT71V2579YS85BGI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5664
IDT71V2579YS85BQ
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5665
IDT71V2579YS85BQI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5666
IDT71V2579YS85PF
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5667
IDT71V2579YS85PFI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5668
IDT71V2579YSA75BG
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5669
IDT71V2579YSA75BQ
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5670
IDT71V2579YSA80BG
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5671
IDT71V2579YSA80BGI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5672
IDT71V2579YSA80BQ
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5673
IDT71V2579YSA80BQI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5674
IDT71V2579YSA85BG
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5675
IDT71V2579YSA85BGI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5676
IDT71V2579YSA85BQ
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5677
IDT71V2579YSA85BQI
Integrated Device Technology, Inc.
256k x 18 3.3 V Synchronous SRAM 2.5 V I/O, Flow-Through Outputs Burst Counter, Single Cycle Desele
22页
290K
5678
J5819-1
Microsemi Corporation
Signal Diode
2页
36K
5679
J6761-1
Microsemi Corporation
Signal Diode
2页
36K
5680
JS5819-1
Microsemi Corporation
Signal Diode
2页
36K
5681
JS6761-1
Microsemi Corporation
Signal Diode
2页
36K
5682
JAN1N4938-1
Microsemi Corporation
Silicon Switching Diode
4页
187K
5683
JAN1N914UR-1
Microsemi Corporation
Silicon Switching Diode
1页
64K
5684
JTS8388B-1V1B
Atmel Corporation
ADC 8 Bit 1 Gsps
57页
1276K
5685
JTS8388B-1V2B
Atmel Corporation
ADC 8 Bit 1 Gsps
57页
1276K
5686
JTX1N4938-1
Microsemi Corporation
Silicon Switching Diode
4页
187K
5687
JTX1N914UR-1
Microsemi Corporation
Silicon Switching Diode
1页
64K
5688
JTXV1N4938-1
Microsemi Corporation
Silicon Switching Diode
4页
187K
5689
JTXV1N914UR-1
Microsemi Corporation
Silicon Switching Diode
1页
64K
5690
JV5819-1
Microsemi Corporation
Signal Diode
2页
36K
5691
JV6761-1
Microsemi Corporation
Signal Diode
2页
36K
5692
JX5819-1
Microsemi Corporation
Signal Diode
2页
36K
5693
JX6761-1
Microsemi Corporation
Signal Diode
2页
36K
5694
KS9802
Samsung Semiconductor, Inc.
INFRAED REMOCON RECEIVER
10页
176K
5695
KSB906
Fairchild Semiconductor
PNP Epitaxial Silicon Transistor
4页
66K
5696
KSB907
Fairchild Semiconductor
PNP Silicon Darlington Transistor
4页
54K
5697
KT8554BD
Samsung Semiconductor, Inc.
1 CHIP CODEC
10页
152K
5698
KT8554BJ
Samsung Semiconductor, Inc.
1 CHIP CODEC
10页
152K
5699
KT8554BN
Samsung Semiconductor, Inc.
1 CHIP CODEC
10页
152K
5700
KT8557BD
Samsung Semiconductor, Inc.
1 CHIP CODEC
10页
152K
共 8508 | 171 页 | 第 114 页 |
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