- 2401
- Jul-59
- Inmet Corporation
- ATTENUATOR
- 1页
- 252K
- 2402
- Jun-46
- Inmet Corporation
- ATTENUATOR
- 1页
- 252K
- 2403
- KMM366S1623CT-G8
- Samsung Semiconductor, Inc.
- 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
- 10页
- 151K
- 2404
- KMM366S1623CT-GH
- Samsung Semiconductor, Inc.
- 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
- 10页
- 151K
- 2405
- KMM366S1623CT-GL
- Samsung Semiconductor, Inc.
- 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
- 10页
- 151K
- 2406
- K4S161622D-TE10
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2407
- K4S161622D-TE50
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2408
- K4S161622D-TE55
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2409
- K4S161622D-TE60
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2410
- K4S161622D-TE70
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2411
- K4S161622D-TE80
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2412
- K4S161622D-TI10
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2413
- K4S161622D-TI50
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2414
- K4S161622D-TI55
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2415
- K4S161622D-TI60
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2416
- K4S161622D-TI70
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2417
- K4S161622D-TI80
- Samsung Semiconductor, Inc.
- 512k x 16 Bit x 2 Banks Synchronous DRAM
- 43页
- 680K
- 2418
- KA3S0765R-TU
- Fairchild Semiconductor
- Power Switch(FPS)
- 12页
- 144K
- 2419
- KA3S0765R-YDTU
- Fairchild Semiconductor
- Power Switch(FPS)
- 12页
- 144K
- 2420
- KA3S0765RF-TU
- Fairchild Semiconductor
- Power Switch(FPS)
- 12页
- 144K
- 2422
- KA3S1265R-TU
- Fairchild Semiconductor
- Fairchild Power Switch(FPS)
- 12页
- 3776K
- 2423
- KA3S1265R-YDTU
- Fairchild Semiconductor
- Fairchild Power Switch(FPS)
- 12页
- 3776K
- 2424
- KA3S1265RD-TU
- Fairchild Semiconductor
- Fairchild Power Switch(FPS)
- 12页
- 3776K
- 2425
- KA3S1265RD-YDTU
- Fairchild Semiconductor
- Fairchild Power Switch(FPS)
- 12页
- 3776K
- 2426
- KA3S1265RF-TU
- Fairchild Semiconductor
- Fairchild Power Switch(FPS)
- 12页
- 3776K
- 2427
- KA3S1265RF-YDTU
- Fairchild Semiconductor
- Fairchild Power Switch(FPS)
- 12页
- 3776K
- 2440
- KM416S4030CT-G/F7
- Samsung Semiconductor, Inc.
- 1M x 16Bit x 4 Banks Synchronous DRAM
- 11页
- 124K
- 2441
- KM416S4030CT-G/F8
- Samsung Semiconductor, Inc.
- 1M x 16Bit x 4 Banks Synchronous DRAM
- 11页
- 124K
- 2442
- KM416S4030CT-G/FH
- Samsung Semiconductor, Inc.
- 1M x 16Bit x 4 Banks Synchronous DRAM
- 11页
- 124K
- 2443
- KM416S4030CT-G/FL
- Samsung Semiconductor, Inc.
- 1M x 16Bit x 4 Banks Synchronous DRAM
- 11页
- 124K
- 2444
- KM416S4030CT-GF10
- Samsung Semiconductor, Inc.
- 1M x 16Bit x 4 Banks Synchronous DRAM
- 11页
- 124K
- 2445
- KM432S2030CT-G/F10
- Samsung Semiconductor, Inc.
- 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
- 43页
- 1198K
- 2446
- KM432S2030CT-G/F6
- Samsung Semiconductor, Inc.
- 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
- 43页
- 1198K
- 2447
- KM432S2030CT-G/F7
- Samsung Semiconductor, Inc.
- 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
- 43页
- 1198K
- 2448
- KM432S2030CT-G/F8
- Samsung Semiconductor, Inc.
- 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
- 43页
- 1198K
- 2449
- KM432S2030CT-G/FC
- Samsung Semiconductor, Inc.
- 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
- 43页
- 1198K