• 51
• NE25139U74
• NEC Corporation
• Dual-Gate GaAS MESFET
• 页
• K

• 52
• NE3503M04
• NEC Corporation
• C To Ku Band Super Low Noise and High-Gain Amplifier N-Channel HJ-FET
• 9页
• 72K

• 53
• NE3503M04-T2
• NEC Corporation
• C To Ku Band Super Low Noise and High-Gain Amplifier N-Channel HJ-FET
• 9页
• 72K

• 54
• NE552R479A-T1
• NEC Corporation
• 3.0 V Operation Silicon RF Power LDMOS FET for 2.45 GHz 0.4 W Transmission Amplifiers
• 9页
• 67K

• 55
• NE552R479A-T1A
• NEC Corporation
• 3.0 V Operation Silicon RF Power LDMOS FET for 2.45 GHz 0.4 W Transmission Amplifiers
• 9页
• 67K

• 56
• NE6510179A-T1
• NEC Corporation
• 1 W L-Band Power GaAs HJ-FET
• 9页
• 72K

• 57
• NE661M04
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON HIGH FREQUENCY TRANSISTOR
• 7页
• 58K

• 58
• NE663M04-T2
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON HIGH FREQUENCY TRANSISTOR
• 8页
• 75K

• 59
• NESG2021M05FB
• NEC Corporation
• NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimo
• 14页
• 84K

• 60
• NESG2021M05FB-T1
• NEC Corporation
• NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimo
• 14页
• 84K

• 61
• NESG2101M05FB
• NEC Corporation
• NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Supe
• 15页
• 93K

• 62
• NESG2101M05FB-T1
• NEC Corporation
• NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Supe
• 15页
• 93K

• 63
• NESG250134FB
• NEC Corporation
• NPN SiGe RF Transistor for Medium Output Power Amplification (800 mW) 3-pin Power Minimold (34 Packa
• 6页
• 36K

• 64
• NESG250134FB-T1
• NEC Corporation
• NPN SiGe RF Transistor for Medium Output Power Amplification (800 mW) 3-pin Power Minimold (34 Packa
• 6页
• 36K

• 65
• NJM2640E
• New Japan Radio Co., Ltd.
• Two-phase Unipolar DC Brushless Motor Pre-Driver IC
• 7页
• 60K

• 66
• PMB2201
• Infineon Technologies Corporation
• Mixer DC - 2.5 GHz and Vector Modulator 0.8 - 1.5 GHz
• 31页
• 339K

• 67
• PS710E-1A
• NEC Corporation
• 6-Pin DIP, 0.08 ohm Low On-state Resistance 2.0 A Continuous Load Current 1-Ch Optical Coupled MOS F
• 13页
• 72K

• 68
• PS710EL-1A
• NEC Corporation
• 6-Pin DIP, 0.08 ohm Low On-state Resistance 2.0 A Continuous Load Current 1-Ch Optical Coupled MOS F
• 13页
• 72K

• 69
• PS710EL-1A-E3
• NEC Corporation
• 6-Pin DIP, 0.08 ohm Low On-state Resistance 2.0 A Continuous Load Current 1-Ch Optical Coupled MOS F
• 13页
• 72K

• 70
• PS710EL-1A-E4
• NEC Corporation
• 6-Pin DIP, 0.08 ohm Low On-state Resistance 2.0 A Continuous Load Current 1-Ch Optical Coupled MOS F
• 13页
• 72K

• 71
• PS7122-2B
• NEC Compound Semiconductor Devices, Ltd.
• 8 PIN DIP TYPE OPTO-COUPLED SOLID STATE RELAY
• 2页
• 25K

• 72
• PS7122L-2B
• NEC Compound Semiconductor Devices, Ltd.
• 8 PIN DIP TYPE OPTO-COUPLED SOLID STATE RELAY
• 2页
• 25K

• 73
• PWM-84C-XXXXB
• Merrimac Industries, Inc.
• PHASE SHIFTERS, DIGITAL
• 2页
• 56K

• 74
• PCK351D
• Philips Semiconductors
• 1:10 Clock Distribution Device with 3-State Outputs
• 17页
• 316K

• 75
• PCK351DB
• Philips Semiconductors
• 1:10 Clock Distribution Device with 3-State Outputs
• 17页
• 316K

• 76
• RA07M4047M
• Mitsubishi Electric Corporation
• Silicon MOS FET Power Amplifier, 400-470MHz 7W PORTABLE RADIO
• 4页
• 112K

• 77
• RA07M4047M-01
• Mitsubishi Electric Corporation
• 400 - 470 MHz 7 W 7.2 V, 2 Stage Amp. for Portable Radio
• 9页
• 89K

• 78
• RN1110F
• Toshiba America, Inc.
• Silicon NPN Epitaxial Type (PCT Process) Transistor
• 5页
• 230K

• 79
• RN1111F
• Toshiba America, Inc.
• Silicon NPN Epitaxial Type (PCT Process) Transistor
• 5页
• 230K

• 80
• RN2414
• Toshiba America, Inc.
• Transistor Silicon PNP Epitaxial Type (PCT Process)
• 8页
• 423K

• 81
• RN2415
• Toshiba America, Inc.
• Transistor Silicon PNP Epitaxial Type (PCT Process)
• 8页
• 423K

• 82
• RN2416
• Toshiba America, Inc.
• Transistor Silicon PNP Epitaxial Type (PCT Process)
• 8页
• 423K

• 83
• RN2417
• Toshiba America, Inc.
• Transistor Silicon PNP Epitaxial Type (PCT Process)
• 8页
• 423K

• 84
• RN2418
• Toshiba America, Inc.
• Transistor Silicon PNP Epitaxial Type (PCT Process)
• 8页
• 423K

• 85
• uPG2214TB-E4
• NEC Corporation
• Switch, Active, RF & IF
• 页
• K

• 86
• UNR221W
• 松下資訊科技
• Silicon NPN epitaxial planer type
• 2页
• 54K

• 87
• uPA801T
• NEC Electronics, Inc.
• HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS)
• 6页
• 45K

• 88
• UPA801T-T1
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON HIGH FREQUENCY TRANSISTOR
• 7页
• 39K

• 89
• uPA801T-T1
• NEC Electronics, Inc.
• HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS)
• 6页
• 45K

• 90
• UPA801TF
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON HIGH FREQUENCY TRANSISTOR
• 1页
• 15K

• 91
• UPA808TC
• NEC Electronics, Inc.
• NPN SILICON HIGH FREQUENCY TRANSISTOR
• 3页
• 32K

• 92
• UPA809TF
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON HIGH FREQUENCY TRANSISTOR
• 1页
• 15K

• 93
• uPC3403C
• NEC Electronics, Inc.
• HIGH PERFORMANCE QUAD OPERATIONAL AMPLIFIER
• 8页
• 270K

• 94
• uPC3403G2
• NEC Electronics, Inc.
• HIGH PERFORMANCE QUAD OPERATIONAL AMPLIFIER
• 8页
• 270K

• 95
• VQB1077A
• Valvo Bauelemente GmbH
• Double Isolator
• 1页
• 26K

• 96
• VSC7924CA-T
• Vitesse Semiconductor Corporation
• SDH/SONET 2.5Gb/s Laser Diode Driver
• 14页
• 104K

• 97
• VSC7924CAL-T
• Vitesse Semiconductor Corporation
• SDH/SONET 2.5Gb/s Laser Diode Driver
• 14页
• 104K

• 98
• VSC7924KF-T
• Vitesse Semiconductor Corporation
• SDH/SONET 2.5Gb/s Laser Diode Driver
• 14页
• 104K

• 99
• VSC7924KFL-T
• Vitesse Semiconductor Corporation
• SDH/SONET 2.5Gb/s Laser Diode Driver
• 14页
• 104K

• 100
• V602ME06
• Z-Communications, Inc.
• VOLTAGE CONTROLLED OSCILLATOR
• 2页
• 43K