• 1051
• LM3911
• National Semiconductor Corporation
• Temperature Controller
• 8页
• 210K

• 1052
• LM5Q31
• 夏普公司
• Color STN-LCD Module (FA/POS/Measuring instrument)
• 1页
• 17K

• 1053
• LM5Q32
• 夏普公司
• Passive Matrix Color LCD Module (320 x 240 dots)
• 20页
• 687K

• 1054
• LA150
• Amplifier Research
• LOAD ATTENUATOR 150 WATTS, DC-5GHz
• 2页
• 15K

• 1055
• LA250
• Amplifier Research
• LOAD ATTENUATOR 250WATTS, DC-5GHz
• 2页
• 15K

• 1056
• MG75Q1BS11
• Toshiba America, Inc.
• GTR Module Silicon N Channel IGBT
• 4页
• 223K

• 1057
• MIG75Q201H
• Toshiba America, Inc.
• Intelligent Power Module Silicon N Channel IGBT
• 7页
• 311K

• 1058
• MIG75Q202H
• Toshiba America, Inc.
• Intelligent GTR Module Silicon N Channel IGBT
• 7页
• 376K

• 1059
• MPC2104PDG66
• Motorola Inc.
• 256KB BurstRAM Secondary Cache Module for PowerPC PReP/CHRP Platforms
• 16页
• 158K

• 1060
• MPC2104PDG66
• Motorola Inc.
• 256KB BurstRAM Secondary Cache Module for PowerPC PReP/CHRP Platforms
• 16页
• 158K

• 1061
• MPC2105PDG66
• Motorola Inc.
• 512KB BurstRAM Secondary Cache Module for PowerPC PReP/CHRP Platforms
• 16页
• 158K

• 1062
• MPC2105PDG66
• Motorola Inc.
• 512KB BurstRAM Secondary Cache Module for PowerPC PReP/CHRP Platforms
• 16页
• 158K

• 1063
• MTV25N50E
• ON Semiconductor
• TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount
• 10页
• 280K

• 1064
• MTV25N50E-RL
• ON Semiconductor
• TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount
• 10页
• 280K

• 1065
• MTY100N10E
• ON Semiconductor
• Power MOSFET 100 A, 100 V
• 8页
• 97K

• 1066
• MTY10N100E
• ON Semiconductor
• TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
• 8页
• 228K

• 1067
• MTY25N60E
• ON Semiconductor
• Power MOSFET 25 A, 600 V
• 8页
• 101K

• 1068
• MTY30N50E
• ON Semiconductor
• Power MOSFET 30 A, 500 V
• 8页
• 104K

• 1069
• MTY55N20E
• ON Semiconductor
• Power MOSFET 55 A, 200 V
• 8页
• 101K

• 1070
• MB3793-45PF
• Fujitsu Quantum Devices Limited
• Power Voltage Monitoring IC with Watchdog Timer
• 18页
• 138K

• 1071
• MB3793-45PNF
• Fujitsu Quantum Devices Limited
• Power Voltage Monitoring IC with Watchdog Timer
• 18页
• 138K

• 1072
• MB89613RP-SH
• Fujitsu Quantum Devices Limited
• 8 Bit Proprietary Microcontroller
• 44页
• 665K

• 1073
• MB89613RPF
• Fujitsu Quantum Devices Limited
• 8 Bit Proprietary Microcontroller
• 44页
• 665K

• 1074
• MB89613RPFM
• Fujitsu Quantum Devices Limited
• 8 Bit Proprietary Microcontroller
• 44页
• 665K

• 1075
• MB89613RPFV
• Fujitsu Quantum Devices Limited
• 8 Bit Proprietary Microcontroller
• 44页
• 665K

• 1076
• MB89615RP-SH
• Fujitsu Quantum Devices Limited
• 8 Bit Proprietary Microcontroller
• 44页
• 665K

• 1077
• MB89615RPF
• Fujitsu Quantum Devices Limited
• 8 Bit Proprietary Microcontroller
• 44页
• 665K

• 1078
• MB89615RPFM
• Fujitsu Quantum Devices Limited
• 8 Bit Proprietary Microcontroller
• 44页
• 665K

• 1079
• MB89615RPFV
• Fujitsu Quantum Devices Limited
• 8 Bit Proprietary Microcontroller
• 44页
• 665K

• 1080
• NE325S01-T1
• NEC Electronics, Inc.
• C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
• 12页
• 50K

• 1081
• NE325S01-T1B
• NEC Electronics, Inc.
• C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
• 12页
• 50K

• 1082
• NE425S01-T1
• NEC Electronics, Inc.
• C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
• 12页
• 47K

• 1083
• NE425S01-T1B
• NEC Electronics, Inc.
• C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
• 12页
• 47K

• 1084
• OL6205N-1-A10
• OKI Semiconductor Singapore Pte. Ltd.
• MQW Laser Diode Uncooled Dil Module (1625 nm +/-10 nm, 1 mW)
• 8页
• 58K

• 1085
• PEB3065-N
• Infineon Technologies Corporation
• The Signal Processing Subscriber Line Interface Codec Filter
• 58页
• 310K

• 1086
• PEB3065N
• Infineon Technologies Corporation
• Signal Processing Subscriber Line Interface Codec Filter
• 58页
• 310K

• 1087
• PEB4065
• Infineon Technologies Corporation
• High Voltage Subscriber Line IC
• 58页
• 310K

• 1088
• PEF3065-N
• Infineon Technologies Corporation
• The Signal Processing Subscriber Line Interface Codec Filter
• 58页
• 310K

• 1089
• PHB45NQ10T
• Philips Semiconductors
• N-Channel TrenchMOS Transistor
• 11页
• 110K

• 1090
• PHK5NQ10T
• Philips Semiconductors
• N-channel TrenchMOS Transistor
• 7页
• 84K

• 1091
• PHM15NQ20T
• Philips Semiconductors
• TrenchMOS Standard Level FET
• 12页
• 248K

• 1092
• PHP45NQ10T
• Philips Semiconductors
• N-Channel TrenchMOS Transistor
• 11页
• 110K

• 1093
• PHP5N40
• Philips Semiconductors
• PowerMOS Transistor
• 7页
• 53K

• 1094
• PHW35NQ20T
• Philips Semiconductors
• N-Channel TrenchMOS Transistor
• 7页
• 94K

• 1095
• PHW45NQ10T
• Philips Semiconductors
• N-Channel TrenchMOS Transistor
• 11页
• 110K

• 1096
• PM0
• Semtech International AG
• RECTIFIER, up to 1kV, 2A, 2.5us
• 3页
• 115K

• 1097
• PM6
• Semtech International AG
• RECTIFIER, up to 600V, 2A, 2.5us
• 3页
• 115K

• 1098
• PM75RSA060
• Mitsubishi Electric Corporation
• Intelligent Power Module
• 8页
• 82K

• 1099
• PM75RSD060
• Mitsubishi Electric Corporation
• Intelligent Power Module
• 6页
• 142K

• 1100
• PM75RSD120
• Mitsubishi Electric Corporation
• Intelligent Power Module
• 6页
• 141K