• 327801
• IDT72T1875L6-7BB
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 16,384 x 18/32,768 x 9
• 55页
• 540K

• 327802
• IDT72T1885L10BB
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 32,768 x 18/65,536 x 9
• 55页
• 540K

• 327803
• IDT72T1885L4-4BB
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 32,768 x 18/65,536 x 9
• 55页
• 540K

• 327804
• IDT72T1885L5BB
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 32,768 x 18/65,536 x 9
• 55页
• 540K

• 327805
• IDT72T1885L5BBI
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 32,768 x 18/65,536 x 9
• 55页
• 540K

• 327806
• IDT72T1885L6-7BB
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 32,768 x 18/65,536 x 9
• 55页
• 540K

• 327807
• IDT72T1895L10BB
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 65,536 x 18/131,072 x 9
• 55页
• 540K

• 327808
• IDT72T1895L4-4BB
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 65,536 x 18/131,072 x 9
• 55页
• 540K

• 327809
• IDT72T1895L5BB
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 65,536 x 18/131,072 x 9
• 55页
• 540K

• 327810
• IDT72T1895L5BBI
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 65,536 x 18/131,072 x 9
• 55页
• 540K

• 327811
• IDT72T1895L6-7BB
• Integrated Device Technology, Inc.
• 2.5 V High-Speed TeraSync FIFO 18 Bit/9 Bit Configurations 65,536 x 18/131,072 x 9
• 55页
• 540K

• 327812
• J210
• Sipex Corporation
• N-Channel JFET
• 2页
• 22K

• 327813
• Jan-43
• Monitor Products Co., Inc.
• OSCILLATOR, CRYSTAL, VOLTAGE CONTROLLED
• 4页
• 207K

• 327814
• JTMP0360-002S
• Toshiba America, Inc.
• LSI for LCD Watches
• 50页
• 2153K

• 327815
• Jan-83
• Monitor Products Co., Inc.
• HYBRID OSCILLATOR, HCMOS, TRI-STATE
• 2页
• 185K

• 327816
• Jul-43
• Monitor Products Co., Inc.
• OSCILLATOR, CRYSTAL, VOLTAGE CONTROLLED
• 4页
• 207K

• 327817
• Jul-59
• Inmet Corporation
• ATTENUATOR
• 1页
• 252K

• 327818
• Jun-46
• Inmet Corporation
• ATTENUATOR
• 1页
• 252K

• 327819
• KMM366S1623CT-G8
• Samsung Semiconductor, Inc.
• 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
• 10页
• 151K

• 327820
• KMM366S1623CT-GH
• Samsung Semiconductor, Inc.
• 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
• 10页
• 151K

• 327821
• KMM366S1623CT-GL
• Samsung Semiconductor, Inc.
• 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
• 10页
• 151K

• 327822
• KU5N12
• Shindengen America, Inc. (SAI)
• Transient Voltage Suppressor
• 6页
• 172K

• 327823
• K4S161622D-TE10
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327824
• K4S161622D-TE50
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327825
• K4S161622D-TE55
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327826
• K4S161622D-TE60
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327827
• K4S161622D-TE70
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327828
• K4S161622D-TE80
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327829
• K4S161622D-TI10
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327830
• K4S161622D-TI50
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327831
• K4S161622D-TI55
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327832
• K4S161622D-TI60
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327833
• K4S161622D-TI70
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327834
• K4S161622D-TI80
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks Synchronous DRAM
• 43页
• 680K

• 327835
• K6F1616U6C-FF55
• Samsung Semiconductor, Inc.
• 1M x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM
• 9页
• 173K

• 327836
• K6F1616U6C-FF70
• Samsung Semiconductor, Inc.
• 1M x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM
• 9页
• 173K

• 327837
• K6F4016U6G-EF55
• Samsung Semiconductor, Inc.
• 256k x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM
• 9页
• 180K

• 327838
• K6F4016U6G-EF70
• Samsung Semiconductor, Inc.
• 256k x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM
• 9页
• 180K

• 327839
• K6T4016U3C-RB10
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327840
• K6T4016U3C-RB70
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327841
• K6T4016U3C-RB85
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327842
• K6T4016U3C-RF10
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327843
• K6T4016U3C-RF70
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327844
• K6T4016U3C-RF85
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327845
• K6T4016U3C-TB10
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327846
• K6T4016U3C-TB70
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327847
• K6T4016U3C-TB85
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327848
• K6T4016U3C-TF10
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327849
• K6T4016U3C-TF70
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K

• 327850
• K6T4016U3C-TF85
• Samsung Semiconductor, Inc.
• 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
• 9页
• 154K