• 323651
• U05TH44
• Toshiba America, Inc.
• RECTIFIER SILICON DIFFUSED TYPE
• 3页
• 169K

• 323652
• uPA1815GR-9JG
• NEC Corporation
• P-Channel MOS Field Effect Transistor for Switching
• 8页
• 64K

• 323653
• uPA800T
• NEC Electronics, Inc.
• HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI
• 6页
• 43K

• 323654
• uPA800T-T1
• NEC Electronics, Inc.
• HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI
• 6页
• 43K

• 323655
• uPA802T
• NEC Electronics, Inc.
• HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI
• 6页
• 45K

• 323656
• uPA802T-T1
• NEC Electronics, Inc.
• HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI
• 6页
• 45K

• 323657
• uPA805T
• NEC Electronics, Inc.
• MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
• 6页
• 38K

• 323658
• uPA805T-T1
• NEC Electronics, Inc.
• MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
• 6页
• 38K

• 323659
• uPA806T
• NEC Electronics, Inc.
• MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
• 6页
• 42K

• 323660
• uPA806T-T1
• NEC Electronics, Inc.
• MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
• 6页
• 42K

• 323661
• UPA808T-T1
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON HIGH FREQUENCY TRANSISTOR
• 9页
• 51K

• 323662
• UPA809T-T1
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON HIGH FREQUENCY TRANSISTOR
• 5页
• 35K

• 323663
• uPA811T
• NEC Electronics, Inc.
• HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4228) SMAL
• 6页
• 43K

• 323664
• uPA811T-T1
• NEC Electronics, Inc.
• HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4228) SMAL
• 6页
• 43K

• 323665
• UPA812T-T1
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON HIGH FREQUENCY TRANSISTOR
• 3页
• 29K

• 323666
• uPA813T
• NEC Electronics, Inc.
• NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4570) SMALL MINI MOLD
• 8页
• 46K

• 323667
• uPA813T-T1
• NEC Electronics, Inc.
• NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4570) SMALL MINI MOLD
• 8页
• 46K

• 323668
• uPA835TC
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SU
• 13页
• 74K

• 323669
• uPA835TC-T1
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SU
• 13页
• 74K

• 323670
• UPA835TF-T1
• NEC Compound Semiconductor Devices, Ltd.
• NPN SILICON EPITAXIAL TWIN TRANSISTOR
• 10页
• 72K

• 323671
• uPC1945TA
• NEC Electronics, Inc.
• ULTRA-LOW-VOLTAGE SHUNT REGULATOR
• 3页
• 77K

• 323672
• UPC2768GR-E1
• NEC Compound Semiconductor Devices, Ltd.
• 3V, 450 MHz SILICON MMIC FREQUENCY CONVERTER
• 4页
• 51K

• 323673
• UPC2768GR-E1
• NEC Compound Semiconductor Devices, Ltd.
• 3V, 450 MHz SILICON MMIC FREQUENCY CONVERTER
• 4页
• 51K

• 323674
• uPC2775GR-E1
• NEC Compound Semiconductor Devices, Ltd.
• FREQUENCY DOWN CONVERTER FOR VHF-UHF BAND TV/VCR TUNER
• 16页
• 128K

• 323675
• uPC2775GS-E1
• NEC Compound Semiconductor Devices, Ltd.
• FREQUENCY DOWN CONVERTER FOR VHF-UHF BAND TV/VCR TUNER
• 16页
• 128K

• 323676
• uPC4064C
• NEC Electronics, Inc.
• J-FET INPUT LOW-POWER QUAD OPERATIONAL AMPLIFIER
• 12页
• 66K

• 323677
• uPC4064G2
• NEC Electronics, Inc.
• J-FET INPUT LOW-POWER QUAD OPERATIONAL AMPLIFIER
• 12页
• 66K

• 323678
• UPC8105GR-E1
• NEC Compound Semiconductor Devices, Ltd.
• SILICON MMIC QUADRATURE MODULATOR
• 5页
• 52K

• 323679
• UPC8125GR-E1
• NEC Compound Semiconductor Devices, Ltd.
• SILICON MMIC UPCONVERTER WITH AGC + IQ MODULATOR
• 5页
• 129K

• 323680
• UPC8125GR-E1
• NEC Compound Semiconductor Devices, Ltd.
• SILICON MMIC UPCONVERTER WITH AGC + IQ MODULATOR
• 5页
• 129K

• 323681
• U635H64BD1C25
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323682
• U635H64BD1C35
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323683
• U635H64BD1C45
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323684
• U635H64BD1K25
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323685
• U635H64BD1K35
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323686
• U635H64BD1K45
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323687
• U635H64BDC25
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323688
• U635H64BDC35
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323689
• U635H64BDC45
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323690
• U635H64BDK25
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323691
• U635H64BDK35
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323692
• U635H64BDK45
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323693
• U635H64BSC25
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323694
• U635H64BSC35
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323695
• U635H64BSC45
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323696
• U635H64BSK25
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323697
• U635H64BSK35
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323698
• U635H64BSK45
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323699
• U635H64D1C25
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K

• 323700
• U635H64D1C35
• ZMD America Inc.
• PowerStore 8K x 8 nvSRAM
• 13页
• 201K