• 201
• BT258S-800R
• Philips Semiconductors
• Thyristor Logic Level
• 6页
• 49K

• 202
• BT258U-500R
• Philips Semiconductors
• Thyristor logic level
• 6页
• 41K

• 203
• BT258U-600R
• Philips Semiconductors
• Thyristor logic level
• 6页
• 41K

• 204
• BT258U-800R
• Philips Semiconductors
• Thyristor logic level
• 6页
• 41K

• 205
• DS1258AB-100
• Maxim Integrated Products, Inc.
• 128k x 16 Nonvolatile SRAM
• 8页
• 168K

• 206
• DS1258AB-100-IND
• Maxim Integrated Products, Inc.
• 128k x 16 Nonvolatile SRAM
• 8页
• 168K

• 207
• DS1258AB-70
• Maxim Integrated Products, Inc.
• 128k x 16 Nonvolatile SRAM
• 8页
• 168K

• 208
• DS1258AB-70-IND
• Maxim Integrated Products, Inc.
• 128k x 16 Nonvolatile SRAM
• 8页
• 168K

• 209
• DS1258Y-100
• Maxim Integrated Products, Inc.
• 128k x 16 Nonvolatile SRAM
• 8页
• 168K

• 210
• DS1258Y-100-IND
• Maxim Integrated Products, Inc.
• 128k x 16 Nonvolatile SRAM
• 8页
• 168K

• 211
• DS1258Y-70
• Maxim Integrated Products, Inc.
• 128k x 16 Nonvolatile SRAM
• 8页
• 168K

• 212
• DS1258Y-70-IND
• Maxim Integrated Products, Inc.
• 128k x 16 Nonvolatile SRAM
• 8页
• 168K

• 213
• EM584161BA-70
• Etron Technology, Inc.
• 256K x 16 Low Power SRAM
• 页
• K

• 214
• EM584161BA-70E
• Etron Technology, Inc.
• 256K x 16 Low Power SRAM
• 页
• K

• 215
• EM584161BA-85
• Etron Technology, Inc.
• 256K x 16 Low Power SRAM
• 页
• K

• 216
• EM584161BA-85E
• Etron Technology, Inc.
• 256K x 16 Low Power SRAM
• 页
• K

• 217
• EM584161BC-70
• Etron Technology, Inc.
• 256K x 16 Low Power SRAM
• 页
• K

• 218
• EM584161BC-85
• Etron Technology, Inc.
• 256K x 16 Low Power SRAM
• 页
• K

• 219
• FQA58N08
• Fairchild Semiconductor
• 80 V N-Channel MOSFET
• 8页
• 620K

• 220
• FQAF58N08
• Fairchild Semiconductor
• 80 V N-Channel MOSFET
• 8页
• 612K

• 221
• FQP58N08
• Fairchild Semiconductor
• 80 V N-Channel MOSFET
• 8页
• 620K

• 222
• FQPF58N08
• Fairchild Semiconductor
• 80 V N-Channel MOSFET
• 8页
• 619K

• 223
• HN58V256AFP-12
• Renesas Technology America, Inc.
• 256k EEPROM (32 kWord x 8 Bit)
• 26页
• 135K

• 224
• HN58V256AT-12
• Renesas Technology America, Inc.
• 256k EEPROM (32 kWord x 8 Bit)
• 26页
• 135K

• 225
• HN58V257AT-12
• Renesas Technology America, Inc.
• 256k EEPROM (32 kWord x 8 Bit) Ready/Inverted Busy and Inverted RES Function
• 26页
• 135K

• 226
• HN58X2402SFP
• Renesas Technology America, Inc.
• Two-wire serial interface 2k EEPROM (256-word x 8-bit)
• 21页
• 88K

• 227
• HN58X2402SFPI
• Renesas Technology America, Inc.
• Two-Wire Serial Interface 2k EEPROM (256 Word x 8 Bit)
• 21页
• 79K

• 228
• HN58X2402ST
• Renesas Technology America, Inc.
• Two-wire serial interface 2k EEPROM (256-word x 8-bit)
• 21页
• 88K

• 229
• HN58X2402STI
• Renesas Technology America, Inc.
• Two-Wire Serial Interface 2k EEPROM (256 Word x 8 Bit)
• 21页
• 79K

• 230
• HN58X2404SFP
• Renesas Technology America, Inc.
• Two-wire serial interface 4k EEPROM (512-word x 8-bit)
• 21页
• 88K

• 231
• HN58X2404SFPI
• Renesas Technology America, Inc.
• Two-Wire Serial Interface 4k EEPROM (512 Word x 8 Bit)
• 21页
• 79K

• 232
• HN58X2404ST
• Renesas Technology America, Inc.
• Two-wire serial interface 4k EEPROM (512-word x 8-bit)
• 21页
• 88K

• 233
• HN58X2404STI
• Renesas Technology America, Inc.
• Two-Wire Serial Interface 4k EEPROM (512 Word x 8 Bit)
• 21页
• 79K

• 234
• HN58X24128FP
• Renesas Technology America, Inc.
• Two-wire serial interface 128k EEPROM (16-kword x 8-bit)
• 20页
• 113K

• 235
• HN58X24128FPI
• Renesas Technology America, Inc.
• Two-Wire Serial Interface 128k EEPROM (16 kWord x 8 Bit)
• 23页
• 84K

• 236
• HN58X24128T
• Renesas Technology America, Inc.
• Two-wire serial interface 128k EEPROM (16-kword x 8-bit)
• 20页
• 113K

• 237
• HN58X24128TI
• Renesas Technology America, Inc.
• Two-Wire Serial Interface 128k EEPROM (16 kWord x 8 Bit)
• 23页
• 84K