• 851
• BUK9509-55A
• Philips Semiconductors
• TrenchMOS Logic Level FET
• 14页
• 313K

• 852
• BUK9608-55A
• Philips Semiconductors
• TrenchMOS Logic Level FET
• 14页
• 328K

• 853
• BUK9609-55A
• Philips Semiconductors
• TrenchMOS Logic Level FET
• 14页
• 313K

• 854
• BUL310
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 6页
• 203K

• 855
• BUL310FP
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 6页
• 208K

• 856
• BUL312FH
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 6页
• 200K

• 857
• BUL381
• ST Microelectronics
• HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
• 7页
• 72K

• 858
• BUL381D
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 6页
• 204K

• 859
• BUL382
• ST Microelectronics
• HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
• 7页
• 72K

• 860
• BUL38D
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 7页
• 227K

• 861
• BUL39D
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 6页
• 196K

• 862
• BUL416
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 6页
• 215K

• 863
• BUL43B
• ON Semiconductor
• NPN Silicon Planar Power Transistor
• 4页
• 98K

• 864
• BUL44
• ON Semiconductor
• NPN Bipolar Power Transistor for Switching Power Supply Applications
• 8页
• 123K

• 865
• BUL44D2
• ON Semiconductor
• High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built
• 16页
• 235K

• 866
• BUL45
• ON Semiconductor
• NPN Silicon Power Transistor
• 12页
• 161K

• 867
• BUL45D2
• ON Semiconductor
• High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built
• 12页
• 194K

• 868
• BUL49A
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 16K

• 869
• BUL49D
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 6页
• 199K

• 870
• BUL50A
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 29K

• 871
• BUL510
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 6页
• 212K

• 872
• BUL52A
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 873
• BUL52AFI
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 4页
• 63K

• 874
• BUL52B
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 875
• BUL52BFI
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 18K

• 876
• BUL53A
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 877
• BUL53B
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 878
• BUL53BSMD
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 20K

• 879
• BUL54A
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 880
• BUL54AFI
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 18K

• 881
• BUL54ASMD
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 20K

• 882
• BUL54B
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 18K

• 883
• BUL54BFI
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 18K

• 884
• BUL55A
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 885
• BUL55B
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 886
• BUL56A
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 887
• BUL56B
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 888
• BUL56BSMD
• Semelab
• NPN FAST SWITCHING TRANSISTOR
• 2页
• 20K

• 889
• BUL57
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 7页
• 269K

• 890
• BUL57A
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 891
• BUL57FP
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 7页
• 269K

• 892
• BUL58A
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 893
• BUL58B
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 19K

• 894
• BUL58BSMD
• Semelab
• ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
• 2页
• 22K

• 895
• BUL58D
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 6页
• 210K

• 896
• BULD118D-1
• ST Microelectronics
• High Voltage Fast-Switching NPN Power Transistor
• 7页
• 259K

• 897
• BULD125KC
• Power Innovations Ltd.
• NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• 8页
• 167K

• 898
• BULD25D
• Power Innovations Ltd.
• NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• 12页
• 277K

• 899
• BULD25DR
• Power Innovations Ltd.
• NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• 12页
• 277K

• 900
• BULD25SL
• Power Innovations Ltd.
• NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• 12页
• 277K