• 62001
• HYS72V64220GU-7-D
• Infineon Technologies Corporation
• 3.3 V 64M x 72 Bit, 512 MByte SDRAM Module
• 15页
• 274K

• 62002
• HYS72V64220GU-7.5-C2
• Infineon Technologies Corporation
• 3.3 V 64M x 72 Bit, 512 MByte SDRAM Module
• 15页
• 274K

• 62003
• HYS72V64220GU-7.5-D
• Infineon Technologies Corporation
• 3.3 V 64M x 72 Bit, 512 MByte SDRAM Module
• 15页
• 274K

• 62004
• HYS72V64220GU-8-C2
• Infineon Technologies Corporation
• 3.3 V 64M x 72 Bit, 512 MByte SDRAM Module
• 15页
• 274K

• 62005
• IDTQS34X383Q3
• Integrated Device Technology, Inc.
• High-Speed 32 Bit Bus Exchange Switch In Millipaq
• 5页
• 57K

• 62006
• ispLSI2064VL-100LB100
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62007
• ispLSI2064VL-100LJ44
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62008
• ispLSI2064VL-100LT100
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62009
• ispLSI2064VL-100LT44
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62010
• ispLSI2064VL-135LB100
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62011
• ispLSI2064VL-135LJ44
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62012
• ispLSI2064VL-135LT100
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62013
• ispLSI2064VL-135LT100I
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62014
• ispLSI2064VL-135LT44
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62015
• ispLSI2064VL-135LT44I
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62016
• ispLSI2064VL-165LB100
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62017
• ispLSI2064VL-165LJ44
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62018
• ispLSI2064VL-165LT100
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62019
• ispLSI2064VL-165LT44
• Lattice Semiconductor Corporation
• 2.5V In-System Programmable SuperFAST High Density PLD
• 14页
• 147K

• 62020
• ITA6V1U1
• ST Microelectronics
• Transil Array for Dataline Protection
• 5页
• 177K

• 62021
• ITA6V1U1RL
• ST Microelectronics
• Transil Array for Dataline Protection
• 5页
• 177K

• 62022
• JDV2S02E
• Toshiba America, Inc.
• Diode Silicon Epitaxial Planar Type
• 3页
• 73K

• 62023
• JDV2S06S
• Toshiba America, Inc.
• Diode Silicon Epitaxial Planar Type
• 2页
• 75K

• 62024
• JDV2S07S
• Toshiba America, Inc.
• Diode Silicon Epitaxial Planar Type
• 2页
• 95K

• 62025
• JDV2S08S
• Toshiba America, Inc.
• Diode Silicon Epitaxial Planar Type
• 2页
• 84K

• 62026
• JDV2S10T
• Toshiba America, Inc.
• Diode Silicon Epitaxial Planar Type
• 2页
• 82K

• 62027
• JDV2S14E
• Toshiba America, Inc.
• Diode Silicon Epitaxial Planar Type
• 3页
• 73K

• 62028
• KV1911A
• Microsemi Corporation
• UHF-Microwave Super Hyperabrupt Junction Varactor Diode
• 1页
• 58K

• 62029
• KV1921A
• Microsemi Corporation
• UHF-Microwave Super Hyperabrupt Junction Varactor Diode
• 1页
• 58K

• 62030
• KV1931A
• Microsemi Corporation
• UHF-Microwave Super Hyperabrupt Junction Varactor Diode
• 1页
• 58K

• 62031
• KV1941A
• Microsemi Corporation
• UHF-Microwave Super Hyperabrupt Junction Varactor Diode
• 1页
• 58K

• 62032
• KV1951A
• Microsemi Corporation
• UHF-Microwave Super Hyperabrupt Junction Varactor Diode
• 1页
• 58K

• 62033
• KV1961A
• Microsemi Corporation
• UHF-Microwave Super Hyperabrupt Junction Varactor Diode
• 1页
• 58K

• 62034
• KV1971A
• Microsemi Corporation
• UHF-Microwave Super Hyperabrupt Junction Varactor Diode
• 1页
• 58K

• 62035
• KV1981A
• Microsemi Corporation
• UHF-Microwave Super Hyperabrupt Junction Varactor Diode
• 1页
• 58K

• 62036
• KV1991A
• Microsemi Corporation
• UHF-Microwave Super Hyperabrupt Junction Varactor Diode
• 1页
• 58K

• 62037
• K6R1004V1C-C10
• Samsung Semiconductor, Inc.
• 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM(3.3V Operating)
• 9页
• 137K

• 62038
• K6R1004V1C-C12
• Samsung Semiconductor, Inc.
• 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM(3.3V Operating)
• 9页
• 137K

• 62039
• K6R1004V1C-C15
• Samsung Semiconductor, Inc.
• 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM(3.3V Operating)
• 9页
• 137K

• 62040
• K6R1004V1C-C20
• Samsung Semiconductor, Inc.
• 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM(3.3V Operating)
• 9页
• 137K

• 62041
• K6R1004V1C-I10
• Samsung Semiconductor, Inc.
• 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM(3.3V Operating)
• 9页
• 137K

• 62042
• K6R1004V1C-I12
• Samsung Semiconductor, Inc.
• 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM(3.3V Operating)
• 9页
• 137K

• 62043
• K6R1004V1C-I15
• Samsung Semiconductor, Inc.
• 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM(3.3V Operating)
• 9页
• 137K

• 62044
• K6R1004V1C-I20
• Samsung Semiconductor, Inc.
• 256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM(3.3V Operating)
• 9页
• 137K

• 62045
• K6R3024V1D-HC09
• Samsung Semiconductor, Inc.
• 128k x 24 Bit High-Speed CMOS Static RAM (3.3 V Operating)
• 9页
• 172K

• 62046
• K6R3024V1D-HC10
• Samsung Semiconductor, Inc.
• 128k x 24 Bit High-Speed CMOS Static RAM (3.3 V Operating)
• 9页
• 172K

• 62047
• K6R3024V1D-HC12
• Samsung Semiconductor, Inc.
• 128k x 24 Bit High-Speed CMOS Static RAM (3.3 V Operating)
• 9页
• 172K

• 62048
• K6R3024V1D-HI09
• Samsung Semiconductor, Inc.
• 128k x 24 Bit High-Speed CMOS Static RAM (3.3 V Operating)
• 9页
• 172K

• 62049
• K6R3024V1D-HI10
• Samsung Semiconductor, Inc.
• 128k x 24 Bit High-Speed CMOS Static RAM (3.3 V Operating)
• 9页
• 172K

• 62050
• K6R3024V1D-HI12
• Samsung Semiconductor, Inc.
• 128k x 24 Bit High-Speed CMOS Static RAM (3.3 V Operating)
• 9页
• 172K