• 211451
• F08
• EMCO High Voltage Corporation
• Compact, 10 Watt, High Voltage Module
• 2页
• 375K

• 211452
• F0950A
• OSRAM Opto Semiconductors GmbH & Co.
• InGaAs Infrared Emitting Diode (950 nm, High Power)
• 7页
• 67K

• 211453
• F1-Series
• Fujitsu Quantum Devices Limited
• Timing Extraction Bandpass Filter
• 8页
• 38K

• 211454
• F10
• EMCO High Voltage Corporation
• Compact, 10 Watt, High Voltage Module
• 2页
• 375K

• 211455
• GS71024T-10
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211456
• GS71024T-10I
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211457
• GS71024T-12
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211458
• GS71024T-12I
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211459
• GS71024T-15
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211460
• GS71024T-15I
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211461
• GS71024T-8
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211462
• GS71024T-8I
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211463
• GS71024U-10
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211464
• GS71024U-10I
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211465
• GS71024U-12
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211466
• GS71024U-12I
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211467
• GS71024U-15
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211468
• GS71024U-15I
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211469
• GS71024U-8
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211470
• GS71024U-8I
• GSI Technology
• 64K x 24 1.5Mb Asynchronous SRAM
• 13页
• 260K

• 211471
• GAL16V8D-10LJ
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211472
• GAL16V8D-10LJ
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211473
• GAL16V8D-10LJI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211474
• GAL16V8D-10LJI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211475
• GAL16V8D-10LP
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211476
• GAL16V8D-10LP
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211477
• GAL16V8D-10LPI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211478
• GAL16V8D-10LPI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211479
• GAL16V8D-10LS
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211480
• GAL16V8D-10LS
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211481
• GAL16V8D-10QJ
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211482
• GAL16V8D-10QJ
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211483
• GAL16V8D-10QP
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211484
• GAL16V8D-10QP
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211485
• GAL16V8D-15LJ
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211486
• GAL16V8D-15LJ
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211487
• GAL16V8D-15LJI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211488
• GAL16V8D-15LJI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211489
• GAL16V8D-15LP
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211490
• GAL16V8D-15LP
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211491
• GAL16V8D-15LPI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211492
• GAL16V8D-15LPI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211493
• GAL16V8D-15LS
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211494
• GAL16V8D-15LS
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211495
• GAL16V8D-15QJ
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211496
• GAL16V8D-15QJ
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211497
• GAL16V8D-15QP
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211498
• GAL16V8D-15QP
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K

• 211499
• GAL16V8D-20QJI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 22页
• 315K

• 211500
• GAL16V8D-20QJI
• Lattice Semiconductor Corporation
• High Performance EECMOS PLD Generic Array Logic
• 4页
• 43K