• 202401
• M4-64/32-7VC48
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202402
• M4-96/48-10VC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202403
• M4-96/48-10VI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202404
• M4-96/48-12VC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202405
• M4-96/48-12VI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202406
• M4-96/48-14VI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202407
• M4-96/48-15VC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202408
• M4-96/48-18VI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202409
• M4-96/48-7VC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202410
• M464S6453BK0-C1H
• Samsung Semiconductor, Inc.
• 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
• 10页
• 144K

• 202411
• M464S6453BK0-C1L
• Samsung Semiconductor, Inc.
• 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
• 10页
• 144K

• 202412
• M464S6453BK0-C75
• Samsung Semiconductor, Inc.
• 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
• 10页
• 144K

• 202413
• M464S6453BK0-C7A
• Samsung Semiconductor, Inc.
• 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
• 10页
• 144K

• 202414
• M464S6453BK0-L1H
• Samsung Semiconductor, Inc.
• 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
• 10页
• 144K

• 202415
• M464S6453BK0-L1L
• Samsung Semiconductor, Inc.
• 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
• 10页
• 144K

• 202416
• M464S6453BK0-L75
• Samsung Semiconductor, Inc.
• 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
• 10页
• 144K

• 202417
• M464S6453BK0-L7A
• Samsung Semiconductor, Inc.
• 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
• 10页
• 144K

• 202418
• M470L1624FT0-CA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202419
• M470L1624FT0-CB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202420
• M470L1624FT0-CB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202421
• M470L1624FT0-LA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202422
• M470L1624FT0-LB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202423
• M470L1624FT0-LB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202424
• M470L2923BN0-CA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202425
• M470L2923BN0-CB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202426
• M470L2923BN0-CB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202427
• M470L2923BN0-LA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202428
• M470L2923BN0-LB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202429
• M470L2923BN0-LB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202430
• M470L3224FT0-CA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202431
• M470L3224FT0-CB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202432
• M470L3224FT0-CB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202433
• M470L3224FT0-LA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202434
• M470L3224FT0-LB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202435
• M470L3224FT0-LB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202436
• M470L3324BT0-CA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202437
• M470L3324BT0-CB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202438
• M470L3324BT0-CB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202439
• M470L3324BT0-LA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202440
• M470L3324BT0-LB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202441
• M470L3324BT0-LB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202442
• M470L6524BT0-CA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202443
• M470L6524BT0-CB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202444
• M470L6524BT0-CB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202445
• M470L6524BT0-LA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202446
• M470L6524BT0-LB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202447
• M470L6524BT0-LB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202448
• M470T2953BS0-CCC
• Samsung Semiconductor, Inc.
• DDR2 SDRAM
• 19页
• 239K

• 202449
• M470T2953BS0-CD5
• Samsung Semiconductor, Inc.
• DDR2 SDRAM
• 19页
• 239K

• 202450
• M470T3354BG0-CCC
• Samsung Semiconductor, Inc.
• DDR2 SDRAM
• 19页
• 239K