• 202351
• M470T3354BG0-CD5
• Samsung Semiconductor, Inc.
• DDR2 SDRAM
• 19页
• 239K

• 202352
• M470T6554BG0-CCC
• Samsung Semiconductor, Inc.
• DDR2 SDRAM
• 19页
• 239K

• 202353
• M470T6554BG0-CD5
• Samsung Semiconductor, Inc.
• DDR2 SDRAM
• 19页
• 239K

• 202354
• M485L1624FT0-CA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202355
• M485L1624FT0-CB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202356
• M485L1624FT0-CB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202357
• M485L1624FT0-LA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202358
• M485L1624FT0-LB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202359
• M485L1624FT0-LB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 20页
• 263K

• 202360
• M485L2829BT0-CA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202361
• M485L2829BT0-CB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202362
• M485L2829BT0-CB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202363
• M485L2829BT0-LA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202364
• M485L2829BT0-LB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202365
• M485L2829BT0-LB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202366
• M485L3324BT0-CA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202367
• M485L3324BT0-CB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202368
• M485L3324BT0-CB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202369
• M485L3324BT0-LA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202370
• M485L3324BT0-LB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202371
• M485L3324BT0-LB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202372
• M485L6523BT0-CA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202373
• M485L6523BT0-CB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202374
• M485L6523BT0-CB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202375
• M485L6523BT0-LA2
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202376
• M485L6523BT0-LB0
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202377
• M485L6523BT0-LB3
• Samsung Semiconductor, Inc.
• DDR SDRAM
• 27页
• 451K

• 202378
• M48T248V-85PM1TR
• ST Microelectronics
• 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM
• 23页
• 142K

• 202379
• M48T248Y-70PM1TR
• ST Microelectronics
• 5.0V, 1024K TIMEKEEPER SRAM with PHANTOM
• 23页
• 142K

• 202380
• M4LV-128/64-10VC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202381
• M4LV-128/64-10VI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202382
• M4LV-128/64-10YC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202383
• M4LV-128/64-10YI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202384
• M4LV-128/64-12VC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202385
• M4LV-128/64-12VI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202386
• M4LV-128/64-12YC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202387
• M4LV-128/64-12YI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202388
• M4LV-128/64-14VI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202389
• M4LV-128/64-14YI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202390
• M4LV-128/64-15VC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202391
• M4LV-128/64-15YC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202392
• M4LV-128/64-18VI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202393
• M4LV-128/64-18YI
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202394
• M4LV-128/64-7VC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202395
• M4LV-128/64-7YC
• Lattice Semiconductor Corporation
• High Performance EECMOS In-System Programmable Logic
• 46页
• 720K

• 202396
• M4LV-128N/64-10JC
• Lattice Semiconductor Corporation
• CPLD
• 46页
• 720K

• 202397
• M4LV-128N/64-10JI
• Lattice Semiconductor Corporation
• CPLD
• 46页
• 720K

• 202398
• M4LV-128N/64-12JC
• Lattice Semiconductor Corporation
• CPLD
• 46页
• 720K

• 202399
• M4LV-128N/64-12JI
• Lattice Semiconductor Corporation
• CPLD
• 46页
• 720K

• 202400
• M4LV-128N/64-14JI
• Lattice Semiconductor Corporation
• CPLD
• 46页
• 720K