• 202201
• M58CR064P90ZB6T
• ST Microelectronics
• 64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory
• 70页
• 1000K

• 202202
• M58CR064Q100ZB6T
• ST Microelectronics
• 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
• 68页
• 476K

• 202203
• M58CR064Q10ZB6T
• ST Microelectronics
• 64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory
• 70页
• 1000K

• 202204
• M58CR064Q120ZB6T
• ST Microelectronics
• 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
• 68页
• 476K

• 202205
• M58CR064Q12ZB6T
• ST Microelectronics
• 64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory
• 70页
• 1000K

• 202206
• M58CR064Q85ZB6T
• ST Microelectronics
• 64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory
• 70页
• 1000K

• 202207
• M58CR064Q90ZB6T
• ST Microelectronics
• 64 MBit (4 MBit x 16, Dual Bank, Burst) 1.8 V Supply Flash Memory
• 70页
• 1000K

• 202208
• M58LW064A150N1T
• ST Microelectronics
• 64 Mbit (4Mb x16 or 2Mb x32, Uniform Block) 3V Supply Flash Memory
• 64页
• 374K

• 202209
• M58LW064A150N6T
• ST Microelectronics
• 64 Mbit (4Mb x16 or 2Mb x32, Uniform Block) 3V Supply Flash Memory
• 64页
• 374K

• 202210
• M58LW064A150ZA1T
• ST Microelectronics
• 64 Mbit (4Mb x16 or 2Mb x32, Uniform Block) 3V Supply Flash Memory
• 64页
• 374K

• 202211
• M58LW064A150ZA6T
• ST Microelectronics
• 64 Mbit (4Mb x16 or 2Mb x32, Uniform Block) 3V Supply Flash Memory
• 64页
• 374K

• 202212
• M58LW064B150ZA1T
• ST Microelectronics
• 64 Mbit (4Mb x16 or 2Mb x32, Uniform Block) 3V Supply Flash Memory
• 64页
• 374K

• 202213
• M58LW064B150ZA6T
• ST Microelectronics
• 64 Mbit (4Mb x16 or 2Mb x32, Uniform Block) 3V Supply Flash Memory
• 64页
• 374K

• 202214
• M58MR064C100ZC6T
• ST Microelectronics
• 64 MBit (4 MBit x 16, Mux I/O, Dual Bank, Burst) 1.8 V Supply Flash Memory
• 52页
• 399K

• 202215
• M58MR064C120ZC6T
• ST Microelectronics
• 64 MBit (4 MBit x 16, Mux I/O, Dual Bank, Burst) 1.8 V Supply Flash Memory
• 52页
• 399K

• 202216
• M58MR064D100ZC6T
• ST Microelectronics
• 64 MBit (4 MBit x 16, Mux I/O, Dual Bank, Burst) 1.8 V Supply Flash Memory
• 52页
• 399K

• 202217
• M58MR064D120ZC6T
• ST Microelectronics
• 64 MBit (4 MBit x 16, Mux I/O, Dual Bank, Burst) 1.8 V Supply Flash Memory
• 52页
• 399K

• 202218
• M5M4V4S40CTP-12
• Mitsubishi Electric Corporation
• 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
• 45页
• 1458K

• 202219
• M5M4V4S40CTP-15
• Mitsubishi Electric Corporation
• 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
• 45页
• 1458K

• 202220
• M5M4V64S40ATP-10
• Mitsubishi Electric Corporation
• 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
• 51页
• 1084K

• 202221
• M5M4V64S40ATP-10L
• Mitsubishi Electric Corporation
• 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
• 51页
• 1084K

• 202222
• M5M4V64S40ATP-8
• Mitsubishi Electric Corporation
• 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
• 51页
• 1084K

• 202223
• M5M4V64S40ATP-8A
• Mitsubishi Electric Corporation
• 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
• 51页
• 1084K

• 202224
• M5M4V64S40ATP-8L
• Mitsubishi Electric Corporation
• 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
• 51页
• 1084K

• 202225
• M67748UH
• Mitsubishi Electric Corporation
• 220-225 MHz, 12.5 V, 7 W, FM PORTABLE RADIO
• 1页
• 41K

• 202226
• M67749GL
• Mitsubishi Electric Corporation
• 326-346MHz, 12.5V, 7W, FM PORTABLE RADIO
• 1页
• 44K

• 202227
• M68AW064FL55ZB6T
• ST Microelectronics
• 1 MBit (64k x 16) 3.0 V Asynchronous SRAM
• 18页
• 265K

• 202228
• M68AW064FL70ZB6T
• ST Microelectronics
• 1 MBit (64k x 16) 3.0 V Asynchronous SRAM
• 18页
• 265K

• 202229
• M6MGB166S4BWG
• Mitsubishi Electric Corporation
• 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WOR
• 30页
• 253K

• 202230
• M6MGT166S4BWG
• Mitsubishi Electric Corporation
• 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WOR
• 30页
• 253K

• 202231
• M7
• Beijing Tianrun High Voltage Electronic Devices Factory
• Rectifier Diodes
• 页
• K

• 202232
• M74HC00B1R
• ST Microelectronics
• Quad 2-Input NAND Gate
• 8页
• 178K

• 202233
• M74HC00M1R
• ST Microelectronics
• Quad 2-Input NAND Gate
• 8页
• 178K

• 202234
• M74HC00RM13TR
• ST Microelectronics
• Quad 2-Input NAND Gate
• 8页
• 178K

• 202235
• M74HC00TTR
• ST Microelectronics
• Quad 2-Input NAND Gate
• 8页
• 178K

• 202236
• M74HC04B1R
• ST Microelectronics
• Hex Inverter
• 8页
• 167K

• 202237
• M74HC04M1R
• ST Microelectronics
• Hex Inverter
• 8页
• 167K

• 202238
• M74HC04RM13TR
• ST Microelectronics
• Hex Inverter
• 8页
• 167K

• 202239
• M74HC04TTR
• ST Microelectronics
• Hex Inverter
• 8页
• 167K

• 202240
• M74HC648B1R
• ST Microelectronics
• Octal Bus Transceiver/Register with 3 State Outputs (Inverting)
• 15页
• 549K

• 202241
• M74HC648M1R
• ST Microelectronics
• Octal Bus Transceiver/Register with 3 State Outputs (Inverting)
• 15页
• 549K

• 202242
• M74HC648RM13TR
• ST Microelectronics
• Octal Bus Transceiver/Register with 3 State Outputs (Inverting)
• 15页
• 549K

• 202243
• M74HC648TTR
• ST Microelectronics
• Octal Bus Transceiver/Register with 3 State Outputs (Inverting)
• 15页
• 549K

• 202244
• M74HCT648B1R
• ST Microelectronics
• Octal Bus Transceiver/Register with 3 State Outputs (Inverting)
• 15页
• 410K

• 202245
• M74HCT648M1R
• ST Microelectronics
• Octal Bus Transceiver/Register with 3 State Outputs (Inverting)
• 15页
• 410K

• 202246
• M74HCT648RM13TR
• ST Microelectronics
• Octal Bus Transceiver/Register with 3 State Outputs (Inverting)
• 15页
• 410K

• 202247
• M74HCT648TTR
• ST Microelectronics
• Octal Bus Transceiver/Register with 3 State Outputs (Inverting)
• 15页
• 410K

• 202248
• M74HCT74B1R
• ST Microelectronics
• Dual D Type Flip Flop with Preset and Clear
• 10页
• 432K

• 202249
• M74HCT74M1R
• ST Microelectronics
• Dual D Type Flip Flop with Preset and Clear
• 10页
• 432K

• 202250
• M74HCT74RM13TR
• ST Microelectronics
• Dual D Type Flip Flop with Preset and Clear
• 10页
• 432K