• 2801
• OPA642P
• Texas Instruments Incorporated
• Wideband, Low Distortion, Low Gain Operational Amplifier
• 16页
• 169K

• 2802
• OPA642PB
• Texas Instruments Incorporated
• Wideband, Low Distortion, Low Gain Operational Amplifier
• 16页
• 169K

• 2803
• OPA642U
• Texas Instruments Incorporated
• Wideband, Low Distortion, Low Gain Operational Amplifier
• 16页
• 169K

• 2804
• OPA642UB
• Texas Instruments Incorporated
• Wideband, Low Distortion, Low Gain Operational Amplifier
• 16页
• 169K

• 2805
• OPA643N-250
• Texas Instruments Incorporated
• Wideband Low Distortion, High Gain Operational Amplifier
• 18页
• 171K

• 2806
• OPA643N-3K
• Texas Instruments Incorporated
• Wideband Low Distortion, High Gain Operational Amplifier
• 18页
• 171K

• 2807
• OPA643NB-250
• Texas Instruments Incorporated
• Wideband Low Distortion, High Gain Operational Amplifier
• 18页
• 171K

• 2808
• OPA643NB-3K
• Texas Instruments Incorporated
• Wideband Low Distortion, High Gain Operational Amplifier
• 18页
• 171K

• 2809
• OPA643P
• Texas Instruments Incorporated
• Wideband Low Distortion, High Gain Operational Amplifier
• 18页
• 171K

• 2810
• OPA643PB
• Texas Instruments Incorporated
• Wideband Low Distortion, High Gain Operational Amplifier
• 18页
• 171K

• 2811
• OPA643U
• Texas Instruments Incorporated
• Wideband Low Distortion, High Gain Operational Amplifier
• 18页
• 171K

• 2812
• OPA643UB
• Texas Instruments Incorporated
• Wideband Low Distortion, High Gain Operational Amplifier
• 18页
• 171K

• 2813
• PD04020-2M
• Micronetics Wireless, Inc.
• MULTI-OCTAVE ISOLATED POWER DIVIDER / COMBINER
• 1页
• 256K

• 2814
• PD07540-2M
• Micronetics Wireless, Inc.
• MULTI-OCTAVE ISOLATED POWER DIVIDER / COMBINER
• 1页
• 256K

• 2815
• PD20900-2M
• Micronetics Wireless, Inc.
• MULTI-OCTAVE ISOLATED POWER DIVIDER / COMBINER
• 1页
• 256K

• 2816
• PD45180-2M
• Micronetics Wireless, Inc.
• MULTI-OCTAVE ISOLATED POWER DIVIDER / COMBINER
• 1页
• 256K

• 2817
• PDTA143XE
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 84K

• 2818
• PDTA143XEF
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 84K

• 2819
• PDTA143XK
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 84K

• 2820
• PDTA143XM
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 84K

• 2821
• PDTA143XS
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 84K

• 2822
• PDTA143XT
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 84K

• 2823
• PDTA143XU
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 84K

• 2824
• PDTC143XE
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 80K

• 2825
• PDTC143XK
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 80K

• 2826
• PDTC143XM
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 80K

• 2827
• PDTC143XS
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 80K

• 2828
• PDTC143XT
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 80K

• 2829
• PDTC143XU
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 10 kohm
• 16页
• 80K

• 2830
• PE4122
• Peregrine Semiconductor
• High Linearity Quad MOSFET Mixer For PCS & 3G BTS
• 8页
• 535K

• 2831
• PE4123
• Peregrine Semiconductor
• High Linearity MOSFET Quad Mixer For PCS & 3G BTS
• 7页
• 85K

• 2832
• PE4124
• Peregrine Semiconductor
• High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS
• 6页
• 74K

• 2833
• PE4125
• Peregrine Semiconductor
• High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS
• 6页
• 74K

• 2834
• PE4220
• Peregrine Semiconductor
• SPDT Low Insertion Loss MOSFET RF Switch
• 6页
• 294K

• 2835
• PH0814-40
• M/A-COM
• Linear Power Transistor, 40W 850-1450 MHz
• 1页
• 96K

• 2836
• PHB42N03T
• Philips Semiconductors
• TrenchMOS Transistor Standard Level FET
• 8页
• 53K

• 2837
• PHB44N06LT
• Philips Semiconductors
• TrenchMOS Transistor Logic Level FET
• 10页
• 65K

• 2838
• PHB44N06T
• Philips Semiconductors
• TrenchMOS Transistor Standard Level FET
• 8页
• 56K

• 2839
• PHB45N03LT
• Philips Semiconductors
• N-Channel TrenchMOS Transistor
• 15页
• 295K

• 2840
• PHB45N03LTA
• Philips Semiconductors
• Logic Level FET
• 14页
• 297K

• 2841
• PHB45N03T
• Philips Semiconductors
• TrenchMOS Transistor Standard Level FET
• 8页
• 53K

• 2842
• PHD44N06LT
• Philips Semiconductors
• TrenchMOS Transistor Logic Level FET
• 10页
• 65K

• 2843
• PHD45N03LT
• Philips Semiconductors
• N-Channel TrenchMOS Transistor
• 15页
• 295K

• 2844
• PHD45N03LTA
• Philips Semiconductors
• Logic Level FET
• 14页
• 297K

• 2845
• PHP42N03T
• Philips Semiconductors
• TrenchMOS Transistor Standard Level FET
• 8页
• 50K

• 2846
• PHP44N06LT
• Philips Semiconductors
• TrenchMOS Transistor Logic Level FET
• 10页
• 65K

• 2847
• PHP44N06T
• Philips Semiconductors
• TrenchMOS Transistor Standard Level FET
• 8页
• 53K

• 2848
• PHP45N03LT
• Philips Semiconductors
• N-Channel TrenchMOS Transistor
• 15页
• 295K

• 2849
• PHP45N03LTA
• Philips Semiconductors
• Logic Level FET
• 14页
• 297K

• 2850
• PHP45N03T
• Philips Semiconductors
• TrenchMOS Transistor Standard Level FET
• 8页
• 50K