• 6351
• LC35W256EM-10W
• Sanyo Semiconductor Corporation
• 256k (32 kWord x 8 Bit) SRAM
• 6页
• 46K

• 6352
• LC35W256ET-10W
• Sanyo Semiconductor Corporation
• 256k (32 kWord x 8 Bit) SRAM
• 6页
• 46K

• 6353
• LC7233N-8818
• Sanyo Semiconductor Corporation
• Single-Chip PLL and Controller with LCD Driver
• 36页
• 598K

• 6354
• LC7537AN
• Sanyo Semiconductor Corporation
• Electronic Volume Control System for Audio Equipment
• 11页
• 284K

• 6355
• LC7537N
• Sanyo Semiconductor Corporation
• Electronic Volume Control System for Audio Equipment
• 11页
• 284K

• 6356
• LC7537NE
• Sanyo Semiconductor Corporation
• Electronic Volume Control System for Audio Equipment
• 11页
• 284K

• 6357
• LC7538JM
• Sanyo Semiconductor Corporation
• Electronic Volume Control System for Car Audio
• 14页
• 360K

• 6358
• MF1012S-1
• Mitsubishi Electric Corporation
• Filter, Passive, RF & IF
• 1页
• 153K

• 6359
• MF1037S-1
• Mitsubishi Electric Corporation
• Filter, Passive, RF & IF
• 1页
• 170K

• 6360
• MF1037S-2
• Mitsubishi Electric Corporation
• Filter, Passive, RF & IF
• 1页
• 170K

• 6361
• MF1042S-1
• Mitsubishi Electric Corporation
• Filter, Passive, RF & IF
• 1页
• 147K

• 6362
• MF34-1000
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6363
• MF34-1000R
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6364
• MF34-1200
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6365
• MF34-1200R
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6366
• MF34-1400
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6367
• MF34-1400R
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6368
• MF34-1600
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6369
• MF34-1600R
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6370
• MF34-800
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6371
• MF34-800R
• Dynex Semiconductor Ltd.
• Fast Recovery Diode
• 7页
• 55K

• 6372
• MF83A
• Tele-Tech Corporation
• DOUBLE BALANCED MIXER
• 1页
• 31K

• 6373
• MG1000E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6374
• MG1001E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6375
• MG1002E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6376
• MG1004E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6377
• MG1009E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6378
• MG1014E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6379
• MG1020E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6380
• MG1033E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6381
• MG1042E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6382
• MG1052E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6383
• MG1070E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6384
• MG1090E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6385
• MG1120E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6386
• MG1140E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6387
• MG1200E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6388
• MG1265E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6389
• MG1350E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6390
• MG1480E
• Atmel Corporation
• Radiation Tolerant 0.6 Micron Sea of Gate
• 13页
• 67K

• 6391
• MGFC36V3436
• Mitsubishi Electric Corporation
• 3.4 - 3.6 GHz Band 4 W Internally Matched GaAs FET
• 2页
• 114K

• 6392
• MGFC36V3742A
• Mitsubishi Electric Corporation
• 3.7 - 4.2 GHz Band 4 W Internally Matched GaAs FET
• 2页
• 120K

• 6393
• MGFC36V5258
• Mitsubishi Electric Corporation
• 5.2 - 5.8 GHz Band 4 W Internally Matched GaAs FET
• 2页
• 109K

• 6394
• MGFC36V5964A
• Mitsubishi Electric Corporation
• 5.9 - 6.4 GHz Band 4 W Internally Matched GaAs FET
• 2页
• 115K

• 6395
• MGFC36V6472A
• Mitsubishi Electric Corporation
• 6.4 - 7.2 GHz Band 4 W Internally Matched GaAs FET
• 2页
• 120K

• 6396
• MGFC36V7177A
• Mitsubishi Electric Corporation
• 7.1 - 7.7 GHz Band 4 W Internally Matched GaAs FET
• 2页
• 117K

• 6397
• MGFC36V7785A
• Mitsubishi Electric Corporation
• 7.7 - 8.5 GHz Band 4 W Internally Matched GaAs FET
• 2页
• 126K

• 6398
• MGFC38V5867
• Mitsubishi Electric Corporation
• 5.8 - 6.75 GHz Band 6 W Internally Matched GaAs FET
• 2页
• 105K

• 6399
• MGFC38V5964
• Mitsubishi Electric Corporation
• 5.9 - 6.4 GHz Band 6 W Internally Matched GaAs FET
• 2页
• 102K

• 6400
• MGFC38V6472
• Mitsubishi Electric Corporation
• 6.4 - 7.2 GHz Band 6 W Internally Matched GaAs FET
• 2页
• 103K