• 1901
• 2N2060JANTX
• Microsemi New England Semiconductor
• UNITIZED DUAL NPN SILICON TRANSISTOR
• 2页
• 53K

• 1902
• 2N2060JANTXV
• Microsemi New England Semiconductor
• UNITIZED DUAL NPN SILICON TRANSISTOR
• 2页
• 53K

• 1903
• 2N2060L
• Microsemi Corporation
• Unitized Dual NPN Silicon Transistor
• 2页
• 53K

• 1904
• 2N2060LJAN
• Microsemi New England Semiconductor
• UNITIZED DUAL NPN SILICON TRANSISTOR
• 2页
• 53K

• 1905
• 2N2060LJANTX
• Microsemi New England Semiconductor
• UNITIZED DUAL NPN SILICON TRANSISTOR
• 2页
• 53K

• 1906
• 2N2060LJANTXV
• Microsemi New England Semiconductor
• UNITIZED DUAL NPN SILICON TRANSISTOR
• 2页
• 53K

• 1907
• 2N2102A
• Central Semiconductor Corporation
• NPN SILICON TRANSISTOR
• 1页
• 74K

• 1908
• 2N5002
• Microsemi Corporation
• NPN Power Silicon Transistor
• 2页
• 55K

• 1909
• 2N5003
• Microsemi Corporation
• PNP Power Silicon Transistor
• 2页
• 56K

• 1910
• 2N5004
• Microsemi Corporation
• NPN Power Silicon Transistor
• 2页
• 55K

• 1911
• 2N5005
• Microsemi Corporation
• PNP Power Silicon Transistor
• 2页
• 56K

• 1912
• 2N5006
• Solid State Devices, Inc.
• HIGH SPEED NPN TRANSISTOR
• 2页
• 85K

• 1913
• 2N5008
• Solid State Devices, Inc.
• HIGH SPEED NPN TRANSISTOR
• 2页
• 85K

• 1914
• 2N5010
• Solid State Devices, Inc.
• HIGH VOLTAGE SILICON DIFFUSED NPN TRANSISTOR
• 1页
• 98K

• 1915
• 2N5011
• Solid State Devices, Inc.
• HIGH VOLTAGE SILICON DIFFUSED NPN TRANSISTOR
• 1页
• 98K

• 1916
• 2N5012
• Solid State Devices, Inc.
• HIGH VOLTAGE SILICON DIFFUSED NPN TRANSISTOR
• 1页
• 98K

• 1917
• 2N5013
• Solid State Devices, Inc.
• HIGH VOLTAGE SILICON DIFFUSED NPN TRANSISTOR
• 1页
• 98K

• 1918
• 2N5014
• Solid State Devices, Inc.
• HIGH VOLTAGE SILICON DIFFUSED NPN TRANSISTOR
• 1页
• 98K

• 1919
• 2N5015
• Solid State Devices, Inc.
• HIGH VOLTAGE SILICON DIFFUSED NPN TRANSISTOR
• 1页
• 98K

• 1920
• 2N6032
• Microsemi Corporation
• NPN Power Silicon Transistor
• 2页
• 55K

• 1921
• 2N6033
• Microsemi Corporation
• NPN Power Silicon Transistor
• 2页
• 55K

• 1922
• 2N6034
• Central Semiconductor Corporation
• Complementary Silicon Darlington Power Transistor
• 1页
• 70K

• 1923
• 2N6035
• ON Semiconductor
• Plastic Darlington Complementary Silicon Power Transistor
• 8页
• 107K

• 1924
• 2N6036
• ON Semiconductor
• Plastic Darlington Complementary Silicon Power Transistor
• 8页
• 107K

• 1925
• 2N6037
• Central Semiconductor Corporation
• Complementary Silicon Darlington Power Transistor
• 1页
• 70K

• 1926
• 2N6038
• ON Semiconductor
• Plastic Darlington Complementary Silicon Power Transistor
• 8页
• 107K

• 1927
• 2N6039
• ON Semiconductor
• Plastic Darlington Complementary Silicon Power Transistor
• 8页
• 107K

• 1928
• 2N7000CSM
• Semelab
• N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
• 2页
• 18K

• 1929
• 2N7002CSM
• Semelab
• N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
• 2页
• 14K

• 1930
• 2N7002DW-7
• Diodes, Inc.
• Dual N-Channel Enhancement Mode Field Effect Transistor
• 3页
• 70K

• 1931
• 2N7002DW-7-F
• Diodes, Inc.
• Dual N-Channel Enhancement Mode Field Effect Transistor
• 3页
• 70K

• 1932
• 2N918CSM
• Semelab
• GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR
• 2页
• 19K

• 1933
• 2N930
• Microsemi Corporation
• NPN Low Power Silicon Transistor
• 2页
• 52K

• 1934
• 2N930A
• Central Semiconductor Corporation
• NPN Silicon Transistor
• 2页
• 86K

• 1935
• 2N930CSM
• Semelab
• HIGH SPEED, MEDIUM POWER, NPN
• 2页
• 20K

• 1936
• 2NH45
• Toshiba America, Inc.
• FAST RECOVEY RECTIFIER
• 2页
• 142K

• 1937
• 2NU41
• Toshiba America, Inc.
• SUPER FAST RECOVEY RECTIFIER
• 2页
• 152K

• 1938
• 2P4M
• NEC Corporation
• 2 A (4 Ar.m.s.) Plastic Molded Thyristor
• 3页
• 164K

• 1939
• 2P5M
• NEC Corporation
• 2 A (4 Ar.m.s.) Plastic Molded Thyristor
• 3页
• 164K

• 1940
• 2P6M
• NEC Corporation
• 2 A (4 Ar.m.s.) Plastic Molded Thyristor
• 3页
• 164K

• 1941
• 2PA1015GR
• Philips Semiconductors
• PNP general purpose transistor
• 8页
• 47K

• 1942
• 2PA1015GRAMO
• Philips Semiconductors
• PNP general purpose transistor
• 8页
• 47K

• 1943
• 2PA1015Y
• Philips Semiconductors
• PNP general purpose transistor
• 8页
• 47K

• 1944
• 2PA1015YAMO
• Philips Semiconductors
• PNP general purpose transistor
• 8页
• 47K

• 1945
• 2PA1576Q
• Philips Semiconductors
• PNP General Purpose Transistor
• 8页
• 47K

• 1946
• 2PA1576R
• Philips Semiconductors
• PNP General Purpose Transistor
• 8页
• 47K

• 1947
• 2PA1576S
• Philips Semiconductors
• PNP General Purpose Transistor
• 8页
• 47K

• 1948
• 2PA1774JQ
• Philips Semiconductors
• PNP general purpose transistor
• 8页
• 47K

• 1949
• 2PA1774JR
• Philips Semiconductors
• PNP general purpose transistor
• 8页
• 47K

• 1950
• 2PA1774JS
• Philips Semiconductors
• PNP general purpose transistor
• 8页
• 47K