• 1401
• FD1825
• Panasonic Industrial Sales (Taiwan) Co., Ltd.
• Coupler, Passive, RF & IF
• 页
• K

• 1402
• GVT73512A8J-10
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1403
• GVT73512A8J-10I
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1404
• GVT73512A8J-10L
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1405
• GVT73512A8J-10LI
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1406
• GVT73512A8J-12
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1407
• GVT73512A8J-12I
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1408
• GVT73512A8J-12L
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1409
• GVT73512A8J-12LI
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1410
• GVT73512A8J-15
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1411
• GVT73512A8J-15I
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1412
• GVT73512A8J-15L
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1413
• GVT73512A8J-15LI
• Cypress Semiconductor Corporation
• 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT
• 9页
• 63K

• 1414
• GL5ZR302BOS
• 夏普公司
• Light Emitting Diode
• 11页
• 612K

• 1415
• GL5ZS302BOS
• 夏普公司
• Light Emitting Diode
• 11页
• 615K

• 1416
• GM82C803C
• Hynix Semiconductor Inc.
• 2.88 MB FDC/Dual UARTs with FIFO/PIO (EPP/ECP)/IDE Interface/S-IR/PnP
• 84页
• 506K

• 1417
• GP2D02
• Sharp Electronics Corporation
• Compact, High Sensitive Distance Measuring Sensor
• 5页
• 59K

• 1418
• GP2D03
• Sharp Electronics Corporation
• Paper Size Sensor System
• 4页
• 52K

• 1419
• GP2D05
• Sharp Electronics Corporation
• Distance Measuring Sensor of 1 Bit Output
• 4页
• 54K

• 1420
• HD74ALVCH162830
• Renesas Technology America, Inc.
• Special Driver, Receiver
• 13页
• 68K

• 1421
• HIP6502BCB
• Intersil Corporation
• Multiple Linear Power Controller with ACPI Control Interface
• 14页
• 151K

• 1422
• HM62G18512BP-4
• Renesas Technology America, Inc.
• 8M Synchronous Fast Static RAM (512k-word x 18-bit)
• 23页
• 121K

• 1423
• HM62G18512BP-5
• Renesas Technology America, Inc.
• 8M Synchronous Fast Static RAM (512k-word x 18-bit)
• 23页
• 121K

• 1424
• HMC128G8
• Hittite Microwave Corporation
• GaAs MMIC SMT DOUBLE-BALANCED MIXER 1.8 - 5 GHz
• 4页
• 53K

• 1425
• HMC129G8
• Hittite Microwave Corporation
• GaAs MMIC SMT DOUBLE-BALANCED 4 - 8 GHz MIXER
• 4页
• 54K

• 1426
• HN29V25611ABP-50
• Renesas Technology America, Inc.
• 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
• 44页
• 323K

• 1427
• HN29V25611AT-50
• Renesas Technology America, Inc.
• 256M AND Type Flash Memory More Than 16,057-Sector (271,299,072 Bit)
• 47页
• 349K

• 1428
• HN29V25611AT-50H
• Renesas Technology America, Inc.
• 256M AND Type Flash Memory More Than 16,057-Sector (271,299,072 Bit)
• 47页
• 352K

• 1429
• HN2D01F
• Toshiba America, Inc.
• SILICON EPITAXIAL PLANAR TYPE
• 2页
• 118K

• 1430
• HN2D02FU
• Toshiba America, Inc.
• Silicon Epitaxial Planar Type
• 3页
• 102K

• 1431
• HA2-2529/883
• Intersil Corporation
• Uncompensated, High Slew Rate High Output Current, Operational Amplifier
• 9页
• 85K

• 1432
• HUF76429P3
• Fairchild Semiconductor
• 44 A, 60 V, 0.025 ohm, N-Channel, Logic Level UltraFET Power MOSFET
• 10页
• 207K

• 1433
• HUF76429S3S
• Fairchild Semiconductor
• 44 A, 60 V, 0.025 ohm, N-Channel, Logic Level UltraFET Power MOSFET
• 10页
• 207K

• 1434
• HUF76429S3ST
• Fairchild Semiconductor
• 44 A, 60 V, 0.025 ohm, N-Channel, Logic Level UltraFET Power MOSFET
• 10页
• 207K

• 1435
• HUFA76429P3
• Fairchild Semiconductor
• 44 A, 60 V, 0.025 ohm, N-Channel, Logic Level UltraFET Power MOSFET
• 10页
• 208K

• 1436
• HUFA76429P3T
• Fairchild Semiconductor
• 44 A, 60 V, 0.025 ohm, N-Channel, Logic Level UltraFET Power MOSFET
• 10页
• 208K

• 1437
• HUFA76429S3S
• Fairchild Semiconductor
• 44 A, 60 V, 0.025 ohm, N-Channel, Logic Level UltraFET Power MOSFET
• 10页
• 208K

• 1438
• HUFA76429S3ST
• Fairchild Semiconductor
• 44 A, 60 V, 0.025 ohm, N-Channel, Logic Level UltraFET Power MOSFET
• 10页
• 208K

• 1439
• HA5022IB
• Intersil Corporation
• Dual, 125MHz, Video Current Feedback Amplifier with Disable
• 2页
• 20K

• 1440
• HA5022IB
• Intersil Corporation
• Dual, 125MHz, Video Current Feedback Amplifier with Disable
• 2页
• 20K

• 1441
• HA5022IP
• Intersil Corporation
• Dual, 125MHz, Video Current Feedback Amplifier with Disable
• 2页
• 20K

• 1442
• HA5022IP
• Intersil Corporation
• Dual, 125MHz, Video Current Feedback Amplifier with Disable
• 2页
• 20K

• 1443
• HA7-2529/883
• Intersil Corporation
• Uncompensated, High Slew Rate High Output Current, Operational Amplifier
• 9页
• 85K

• 1444
• HB28B064MM2
• Renesas Technology America, Inc.
• MultiMediaCard 64 MByte
• 90页
• 497K

• 1445
• HB28B128MM2
• Renesas Technology America, Inc.
• MultiMediaCard 128 MByte
• 90页
• 497K

• 1446
• HB28D032MM2
• Renesas Technology America, Inc.
• MultiMediaCard 32 MByte
• 90页
• 497K

• 1447
• HB28H016MM2
• Renesas Technology America, Inc.
• MultiMediaCard 16 MByte
• 90页
• 497K

• 1448
• HCC4522BF
• ST Microelectronics
• PROGRAMMABLE BCD DIVIDER-BY-N COUNTER
• 6页
• 202K

• 1449
• HCF4012BEY
• ST Microelectronics
• Dual 4 Input NAND Gate
• 7页
• 162K

• 1450
• HCF4012BM1
• ST Microelectronics
• Dual 4 Input NAND Gate
• 7页
• 162K