• 1251
• ispLSI2128E-100LT176
• Lattice Semiconductor Corporation
• In-System Programmable SuperFAST High Density PLD
• 11页
• 119K

• 1252
• ispLSI2128E-135LT176
• Lattice Semiconductor Corporation
• In-System Programmable SuperFAST High Density PLD
• 11页
• 119K

• 1253
• ispLSI2128E-180LT176
• Lattice Semiconductor Corporation
• In-System Programmable SuperFAST High Density PLD
• 11页
• 119K

• 1254
• ispLSI2128V-60LJ84
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1255
• ispLSI2128V-60LQ160
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1256
• ispLSI2128V-60LT100
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1257
• ispLSI2128V-60LT100I
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1258
• ispLSI2128V-60LT176
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1259
• ispLSI2128V-60LT176I
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1260
• ispLSI2128V-80LJ84
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1261
• ispLSI2128V-80LQ160
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1262
• ispLSI2128V-80LT100
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1263
• ispLSI2128V-80LT176
• Lattice Semiconductor Corporation
• 3.3V High Density Programmable Logic
• 15页
• 192K

• 1264
• IT1700
• Sipex Corporation
• P-Channel Enhancement Mode MOSFET General Purpose Amplifier
• 2页
• 21K

• 1265
• IT1750
• Sipex Corporation
• N-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
• 1页
• 17K

• 1266
• ITF87072DK8T
• Fairchild Semiconductor
• 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET
• 13页
• 181K

• 1267
• IXKF40N60SCD1
• IXYS Corporation
• CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage IS
• 2页
• 37K

• 1268
• IXKN40N60C
• IXYS Corporation
• CoolMOS Power MOSFET
• 2页
• 45K

• 1269
• IXKN75N60C
• IXYS Corporation
• CoolMOS Power MOSFET
• 2页
• 50K

• 1270
• IXKR40N60C
• IXYS Corporation
• CoolMOS Power MOSFET in ISOPLUS247 Package
• 2页
• 34K

• 1271
• ICL7662CBD
• Intersil Corporation
• CMOS Voltage Converter
• 10页
• 206K

• 1272
• ICL7662CBD-O
• Intersil Corporation
• CMOS Voltage Converter
• 10页
• 206K

• 1273
• ICL7662CPA
• Intersil Corporation
• CMOS Voltage Converter
• 10页
• 206K

• 1274
• ICL7662CTV
• Intersil Corporation
• CMOS Voltage Converter
• 10页
• 206K

• 1275
• ICL7662IBD
• Intersil Corporation
• CMOS Voltage Converter
• 10页
• 206K

• 1276
• ICL7662IPA
• Intersil Corporation
• CMOS Voltage Converter
• 10页
• 206K

• 1277
• ICL7662ITV
• Intersil Corporation
• CMOS Voltage Converter
• 10页
• 206K

• 1278
• ICL7662MTV
• Intersil Corporation
• CMOS Voltage Converter
• 10页
• 206K

• 1279
• ICL7662MTV/883
• Intersil Corporation
• CMOS Voltage Converter
• 10页
• 206K

• 1280
• ICS8432CY-11
• Integrated Circuit Systems, Inc.
• 700MHZ/350MHZ, LOW PHASE NOISE, CRYSTAL-TO-3.3V LVPECL FREQUENCY SYNTHESIZER
• 16页
• 165K

• 1281
• ICS8432CY-11T
• Integrated Circuit Systems, Inc.
• 700MHZ/350MHZ, LOW PHASE NOISE, CRYSTAL-TO-3.3V LVPECL FREQUENCY SYNTHESIZER
• 16页
• 165K

• 1282
• ICS8532AY-01
• Integrated Circuit Systems, Inc.
• LOW SKEW, 1-TO-17 DIFFERENTIAL-TO-3.3V LVPECL FANOUT BUFFER
• 13页
• 142K

• 1283
• ICS8532AY-01T
• Integrated Circuit Systems, Inc.
• LOW SKEW, 1-TO-17 DIFFERENTIAL-TO-3.3V LVPECL FANOUT BUFFER
• 13页
• 142K

• 1284
• ICS8702BY
• Integrated Circuit Systems, Inc.
• LOW SKEW, Divide 1, Divide 2 DIFFERENTIAL-TO-LVCMOS CLOCK GENERATOR
• 15页
• 90K

• 1285
• ICS8702BY-T
• Integrated Circuit Systems, Inc.
• LOW SKEW, Divide 1, Divide 2 DIFFERENTIAL-TO-LVCMOS CLOCK GENERATOR
• 15页
• 90K

• 1286
• ID82C82
• Intersil Corporation
• CMOS Octal Latching Bus Driver
• 7页
• 152K

• 1287
• KMM372C803CK-5
• Samsung Semiconductor, Inc.
• Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 5V
• 20页
• 416K

• 1288
• KMM372C803CK-6
• Samsung Semiconductor, Inc.
• Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 5V
• 20页
• 416K

• 1289
• KMM372C883CK-5
• Samsung Semiconductor, Inc.
• Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 5V
• 20页
• 416K

• 1290
• KMM372C883CK-6
• Samsung Semiconductor, Inc.
• Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 5V
• 20页
• 416K

• 1291
• KMM372F213CK-5
• Samsung Semiconductor, Inc.
• 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 3.3V
• 20页
• 429K

• 1292
• KMM372F213CK-6
• Samsung Semiconductor, Inc.
• 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 3.3V
• 20页
• 429K

• 1293
• KMM372F213CS-5
• Samsung Semiconductor, Inc.
• 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 3.3V
• 20页
• 429K

• 1294
• KMM372F213CS-6
• Samsung Semiconductor, Inc.
• 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 3.3V
• 20页
• 429K

• 1295
• KMM372F400CK-5
• Samsung Semiconductor, Inc.
• Fast Page with EDO Mode 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K Refresh, 3.3V
• 20页
• 428K

• 1296
• KMM372F400CK-6
• Samsung Semiconductor, Inc.
• Fast Page with EDO Mode 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K Refresh, 3.3V
• 20页
• 428K

• 1297
• KMM372F410CK-5
• Samsung Semiconductor, Inc.
• Fast Page with EDO Mode 4M x 72 DRAM DIMM with ECC using 4Mx4, 2K Refresh, 3.3V
• 20页
• 428K

• 1298
• KMM372F410CK-6
• Samsung Semiconductor, Inc.
• Fast Page with EDO Mode 4M x 72 DRAM DIMM with ECC using 4Mx4, 2K Refresh, 3.3V
• 20页
• 428K

• 1299
• KMM372F803BK-5
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 3.3V
• 20页
• 439K

• 1300
• KMM372F803BK-6
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 3.3V
• 20页
• 439K