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- 3851
- 1S60
- Micro Commercial Components
- 1.0 A Schottky Barrier Rectifier
- 3页
- 220K
- 3852
- 1S80
- Micro Commercial Components
- 1.0 A Schottky Barrier Rectifier
- 3页
- 220K
- 3853
- 1S922
- Fairchild Semiconductor
- Small Signal Diode
- 2页
- 62K
- 3854
- 1S923
- Fairchild Semiconductor
- Small Signal Diode
- 2页
- 62K
- 3855
- 1SA0
- Micro Commercial Components
- 1.0 A Schottky Barrier Rectifier
- 3页
- 220K
- 3856
- 1SR139-400
- ROHM CO., LTD.
- Rectifier Diode
- 2页
- 56K
- 3857
- 1SR139-600
- ROHM CO., LTD.
- Rectifier Diode
- 2页
- 56K
- 3858
- 1SR153-400
- ROHM CO., LTD.
- Rectifier Diode
- 2页
- 55K
- 3859
- 1SR154-400
- ROHM CO., LTD.
- Rectifier Diode
- 2页
- 24K
- 3860
- 1SR154-600
- ROHM CO., LTD.
- Rectifier Diode
- 2页
- 24K
- 3861
- 1SR156-400
- ROHM CO., LTD.
- Rectifier Diode
- 2页
- 24K
- 3862
- 1SS108
- Renesas Technology America, Inc.
- Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
- 5页
- 24K
- 3863
- 1SS110
- Renesas Technology America, Inc.
- Silicon Epitaxial Planar Diode for Tuner Band Switch
- 5页
- 23K
- 3864
- 1SS118
- Renesas Technology America, Inc.
- Silicon Epitaxial Planar Diode for High Speed Switching
- 4页
- 22K
- 3865
- 1SS119
- Renesas Technology America, Inc.
- Silicon Epitaxial Planar Diode for High Speed Switching
- 7页
- 73K
- 3866
- 1SS120
- Renesas Technology America, Inc.
- Silicon Epitaxial Planar Diode for High Speed Switching
- 7页
- 74K
- 3867
- 1SS154
- Toshiba America, Inc.
- SILICIN EPITAXIAL SCHTTKY BARRIER TYPE
- 2页
- 95K
- 3868
- 1SS181
- Jiangsu Changjiang Electronics Technology Co., Ltd.
- Switching Diode
- 1页
- 42K
- 3869
- 1SS184
- Jiangsu Changjiang Electronics Technology Co., Ltd.
- Switching Diode
- 1页
- 42K
- 3870
- 1SS187
- Jiangsu Changjiang Electronics Technology Co., Ltd.
- Switching Diode
- 1页
- 42K
- 3871
- 1SS190
- Jiangsu Changjiang Electronics Technology Co., Ltd.
- Switching Diode
- 1页
- 42K
- 3872
- 1SS193
- Jiangsu Changjiang Electronics Technology Co., Ltd.
- Switching Diode
- 1页
- 42K
- 3873
- 1SS198
- Renesas Technology America, Inc.
- Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
- 7页
- 76K
- 3874
- 1SS199
- Renesas Technology America, Inc.
- Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
- 5页
- 24K
- 3875
- 1SS200
- Toshiba America, Inc.
- Silicon Epitaxial Planar Type
- 2页
- 150K
- 3876
- 1SS201
- Toshiba America, Inc.
- Diode Silicon Epitaxial Planar Type
- 3页
- 152K
- 3877
- 1SV102
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planner Type
- 3页
- 161K
- 3878
- 1SV103
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 2页
- 115K
- 3879
- 1SV128
- Toshiba America, Inc.
- Diode Silicon Epitaxial PIN Type
- 2页
- 89K
- 3880
- 1SV147
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 3页
- 147K
- 3881
- 1SV149
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 3页
- 181K
- 3882
- 1SV160
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planner Type
- 2页
- 99K
- 3883
- 1SV172
- Toshiba America, Inc.
- Diode Silicon Epitaxial PIN Type
- 2页
- 86K
- 3884
- 1SV214
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Plannar type
- 2页
- 108K
- 3885
- 1SV215
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Eptaxial Planner Type
- 2页
- 105K
- 3886
- 1SV216
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Eptaxial Planner Type
- 2页
- 105K
- 3887
- 1SV217
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Plannar type
- 2页
- 115K
- 3888
- 1SV225
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar type
- 2页
- 102K
- 3889
- 1SV228
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 3页
- 127K
- 3890
- 1SV229
- Toshiba America, Inc.
- VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
- 2页
- 114K
- 3891
- 1SV230
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 2页
- 108K
- 3892
- 1SV231
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 3页
- 148K
- 3893
- 1SV232
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 3页
- 131K
- 3894
- 1SV233
- Sanyo Semiconductor Corporation
- PIN Diode for VHF, UHF, AGC Use
- 3页
- 67K
- 3895
- 1SV234
- Sanyo Semiconductor Corporation
- PIN Diode
- 3页
- 65K
- 3896
- 1SV237
- Toshiba America, Inc.
- DIODE SILICON EPITAXIAL PIN TYPE
- 3页
- 119K
- 3897
- 1SV239
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 2页
- 111K
- 3898
- 1SV241
- Sanyo Semiconductor Corporation
- PIN Diode for VHF, UHF, AGC Application
- 3页
- 62K
- 3899
- 1SV242
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 2页
- 116K
- 3900
- 1SV245
- Toshiba America, Inc.
- Variable Capacitance Diode Silicon Epitaxial Planar Type
- 3页
- 149K