• 5301
• FSYC9160D3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 4376K

• 5302
• FSYC9160R1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 4376K

• 5303
• FSYC9160R3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 4376K

• 5304
• FSYC9160R4
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 4376K

• 5305
• FSYE13A0D1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 109K

• 5306
• FSYE13A0D3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 109K

• 5307
• FSYE13A0R1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 109K

• 5308
• FSYE13A0R3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 109K

• 5309
• FSYE13A0R4
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 109K

• 5310
• FSYE23A0D1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 3776K

• 5311
• FSYE23A0D3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 3776K

• 5312
• FSYE23A0R1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 3776K

• 5313
• FSYE23A0R3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 3776K

• 5314
• FSYE23A0R4
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 8页
• 3776K

• 5315
• FSYE430D1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 9页
• 356K

• 5316
• FSYE430D3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 9页
• 356K

• 5317
• FSYE430R1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 9页
• 356K

• 5318
• FSYE430R3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 9页
• 356K

• 5319
• FSYE430R4
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
• 9页
• 356K

• 5320
• FSYE913A0D1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 117K

• 5321
• FSYE913A0D3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 117K

• 5322
• FSYE913A0R1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 117K

• 5323
• FSYE913A0R3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 117K

• 5324
• FSYE913A0R4
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 117K

• 5325
• FSYE923A0D1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 118K

• 5326
• FSYE923A0D3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 118K

• 5327
• FSYE923A0R1
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 118K

• 5328
• FSYE923A0R3
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 118K

• 5329
• FSYE923A0R4
• Fairchild Semiconductor
• Radiation Hardened, SEGR Resistant P-Channel Power MOSFET
• 8页
• 118K

• 5330
• FT18/HG
• Philips Semiconductors
• Image Sensor
• 页
• K

• 5331
• FT18/IG
• Philips Semiconductors
• Image Sensor
• 页
• K

• 5332
• FT18/SG
• Philips Semiconductors
• Image Sensor
• 页
• K

• 5333
• FT18/TG
• Philips Semiconductors
• Image Sensor
• 页
• K

• 5334
• F6-Series
• Fujitsu Quantum Devices Limited
• SAW Filter
• 1页
• 19K

• 5335
• F6-Series
• Fujitsu Quantum Devices Limited
• Piezoelectric SAW BPF
• 34页
• 395K

• 5336
• F6-Series
• Fujitsu Quantum Devices Limited
• Piezoelectric SAW BPF (1000 to 2500 MHz)
• 24页
• 423K

• 5337
• F6-Series
• Fujitsu Quantum Devices Limited
• SAW Filter
• 2页
• 20K

• 5338
• FY8ACH-02A
• Mitsubishi Electric Corporation
• HIGH-SPEED SWITCHING USE
• 4页
• 54K

• 5339
• FYAF3004DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 133K

• 5340
• FYAF3045DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 58K

• 5341
• FYD0504SA
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 66K

• 5342
• FYP1004DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 45K

• 5343
• FYP1010DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 47K

• 5344
• FYP1045DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 45K

• 5345
• FYP1504DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 46K

• 5346
• FYP1545DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 46K

• 5347
• FYP2004DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 46K

• 5348
• FYP2006DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 46K

• 5349
• FYP2010DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 45K

• 5350
• FYP2045DN
• Fairchild Semiconductor
• Schottky Barrier Rectifier
• 4页
• 46K