• 1901
• PZTA44
• Philips Semiconductors
• NPN High-Voltage Transistor
• 8页
• 48K

• 1902
• PZTM1101
• Philips Semiconductors
• NPN Transistor/Schottky-diode Module
• 7页
• 36K

• 1903
• PZTM1102
• Philips Semiconductors
• PNP Transistor/Schottky-Diode Module
• 7页
• 41K

• 1904
• PC87109VBE
• National Semiconductor Corporation
• Advanced UART and Infrared Controller
• 56页
• 380K

• 1905
• PCD5003H
• Philips Semiconductors
• Pagers
• 页
• K

• 1906
• PCD5003U/10
• Philips Semiconductors
• Pagers
• 页
• K

• 1907
• PCF85103C-2P
• Philips Semiconductors
• 256 x 8-bit CMOS EEPROM with I 2 C-bus interface
• 20页
• 346K

• 1908
• PCF85103C-2T
• Philips Semiconductors
• 256 x 8-bit CMOS EEPROM with I 2 C-bus interface
• 20页
• 346K

• 1909
• PCM1606E
• Texas Instruments Incorporated
• 24 Bit, 192 kHz Sampling, 6-Channel, Enhanced Multilevel, Delta-Sigma Digital-to-Analog Converter
• 27页
• 385K

• 1910
• PCM1606E/2K
• Texas Instruments Incorporated
• 24 Bit, 192 kHz Sampling, 6-Channel, Enhanced Multilevel, Delta-Sigma Digital-to-Analog Converter
• 27页
• 385K

• 1911
• QTLP601C-2
• Fairchild Semiconductor
• SURFACE MOUNT LED LAMP STANDARD BRIGHT 0603 (0.6 mm Height)
• 6页
• 127K

• 1912
• QTLP601C-3
• Fairchild Semiconductor
• SURFACE MOUNT LED LAMP STANDARD BRIGHT 0603 (0.6 mm Height)
• 6页
• 127K

• 1913
• QTLP601C-4
• Fairchild Semiconductor
• SURFACE MOUNT LED LAMP STANDARD BRIGHT 0603 (0.6 mm Height)
• 6页
• 127K

• 1914
• QTLP601C-7
• Fairchild Semiconductor
• SURFACE MOUNT LED LAMP STANDARD BRIGHT 0603 (0.6 mm Height)
• 6页
• 127K

• 1915
• QTLP601C-B
• Fairchild Semiconductor
• SURFACE MOUNT LED LAMP STANDARD BRIGHT 0603 (0.6 mm Height)
• 6页
• 127K

• 1916
• QTLP603CEBTR
• Fairchild Semiconductor
• LED Lamp
• 6页
• 470K

• 1917
• Q62702-P3587
• OSRAM Opto Semiconductors GmbH & Co.
• Silicon NPN Phototransistor, with Daylight Filter
• 6页
• 174K

• 1918
• Q62702-P3588
• OSRAM Opto Semiconductors GmbH & Co.
• Silicon NPN Phototransistor, with Daylight Filter
• 6页
• 174K

• 1919
• Q62702-P957
• OSRAM Opto Semiconductors GmbH & Co.
• Silicon NPN Phototransistor, with Daylight Filter
• 6页
• 174K

• 1920
• Q62702-P958
• OSRAM Opto Semiconductors GmbH & Co.
• Silicon NPN Phototransistor, with Daylight Filter
• 6页
• 174K

• 1921
• RA07H0608M-01
• Mitsubishi Electric Corporation
• 68 - 88 MHz 7 W 12.5 V, 2 Stage Amp. for Portable Radio
• 9页
• 86K

• 1922
• RA07H4047M-01
• Mitsubishi Electric Corporation
• 400 - 470 MHz 7 W 12.5 V, 2 Stage Amp. for Portable Radio
• 9页
• 92K

• 1923
• RA07N4047M-01
• Mitsubishi Electric Corporation
• 400 - 470 MHz 7.5 W 9.6 V, 2 Stage Amp. for Portable Radio
• 9页
• 85K

• 1924
• RA08H1317M
• Mitsubishi Electric Corporation
• Silicon MOS FET Power Amplifier, 135-175 MHz 8 W PORTABLE RADIO
• 3页
• 157K

• 1925
• RA08H1317M-01
• Mitsubishi Electric Corporation
• 135 - 175 MHz 8 W 12.5 V, 2 Stage Amp. for Portable Radio
• 9页
• 89K

• 1926
• RB501V-40
• ROHM CO., LTD.
• Schottky Barrier Diode
• 2页
• 57K

• 1927
• RB706D-40
• ROHM CO., LTD.
• Schottky Barrier Diode
• 2页
• 26K

• 1928
• RB706F-40
• ROHM CO., LTD.
• Schottky Barrier Diode
• 2页
• 26K

• 1929
• RFS0912-S2
• Micronetics Wireless, Inc.
• PHASESHIFTER/ SWITCHMODULE FORELECTRONICTACAN ANTENNA
• 2页
• 221K

• 1930
• RMBA09500-58
• Raytheon Company
• Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier
• 7页
• 270K

• 1931
• RSX301L-30
• ROHM CO., LTD.
• Shottky Barrier Diode
• 2页
• 65K

• 1932
• RSX501L-20
• ROHM CO., LTD.
• Shottky Barrier Diode
• 2页
• 40K

• 1933
• U10A30P
• Mospec Semiconductor Corp.
• Ultra Fast Recovery Rectifier Diode
• 2页
• 135K

• 1934
• U10A30R
• Mospec Semiconductor Corp.
• Ultra Fast Recovery Rectifier Diode
• 2页
• 135K

• 1935
• U10A40P
• Mospec Semiconductor Corp.
• Ultra Fast Recovery Rectifier Diode
• 2页
• 135K

• 1936
• U10A40R
• Mospec Semiconductor Corp.
• Ultra Fast Recovery Rectifier Diode
• 2页
• 135K

• 1937
• U10A50P
• Mospec Semiconductor Corp.
• Ultra Fast Recovery Rectifier Diode
• 2页
• 135K

• 1938
• U10A50R
• Mospec Semiconductor Corp.
• Ultra Fast Recovery Rectifier Diode
• 2页
• 135K

• 1939
• U10A60P
• Mospec Semiconductor Corp.
• Ultra Fast Recovery Rectifier Diode
• 2页
• 135K

• 1940
• UR7HCPXZ-P440-FA
• Semtech International AG
• Advanced Click-to-Select No-Drift PS/2 Force Stick Controller
• 12页
• 80K

• 1941
• UR7HCPXZ-S440-FG
• Semtech International AG
• Advanced Click-to-Select No-Drift Pointing Stick Controller
• 10页
• 96K

• 1942
• U10A60R
• Mospec Semiconductor Corp.
• Ultra Fast Recovery Rectifier Diode
• 2页
• 135K

• 1943
• UR8HC007-001-FQ
• Semtech International AG
• Input Device and Power Management Companion IC for Jupiter Devices
• 18页
• 171K

• 1944
• UR8HC007-001-FQ
• Semtech International AG
• Input Device and Power Management Companion IC for Jupiter Devices
• 18页
• 171K

• 1945
• UR8HC007-004-FQ
• Semtech International AG
• Extremely Low-Power Input Device and Power Management IC
• 20页
• 177K

• 1946
• UR8HC007-004-FQ
• Semtech International AG
• Extremely Low-Power Input Device and Power Management IC
• 20页
• 177K

• 1947
• UR8HC007-0A4-FQ
• Semtech International AG
• Extremely Low-Power Input Device and Power Management IC
• 20页
• 450K

• 1948
• UR8HC007-0A4-FQ
• Semtech International AG
• Extremely Low-Power Input Device and Power Management IC
• 20页
• 450K

• 1949
• UZZ7000T
• Philips Semiconductors
• Trigger Amplifier with Two Wire Current Interface
• 8页
• 57K

• 1950
• UZZ9000
• Philips Semiconductors
• Sensor Conditioning Electronic
• 16页
• 78K