• 1101
• ILC5061IC37X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1102
• ILC5061IC44X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1103
• ILC5061IC46X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1104
• ILC5061M23X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1105
• ILC5061M25X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1106
• ILC5061M26X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1107
• ILC5061M27X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1108
• ILC5061M28X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1109
• ILC5061M29X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1110
• ILC5061M31X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1111
• ILC5061M32X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1112
• ILC5061M34X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1113
• ILC5061M37X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1114
• ILC5061M44X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1115
• ILC5061M46X
• Fairchild Semiconductor
• Power Supply Reset Monitor with 1% Precision
• 8页
• 76K

• 1116
• IRF2805L
• International Rectifier Corp.
• HEXFET Power MOSFET
• 11页
• 224K

• 1117
• IRF2805S
• International Rectifier Corp.
• HEXFET Power MOSFET
• 11页
• 224K

• 1118
• IRFF9220
• International Rectifier Corp.
• HEXFET Transistor
• 7页
• 130K

• 1119
• IRGB8B60K
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 13页
• 419K

• 1120
• IRGS8B60K
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 13页
• 419K

• 1121
• IRGSL8B60K
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 13页
• 419K

• 1122
• IRLL3303
• International Rectifier Corp.
• HEXFET Power MOSFET
• 9页
• 161K

• 1123
• ISP1520BD
• Philips Semiconductors
• Hi-Speed Universal Serial Bus Hub Controller
• 57页
• 1351K

• 1124
• KSC1009
• Fairchild Semiconductor
• NPN Epitaxial Silicon Transistor
• 4页
• 37K

• 1125
• KSC1845
• Fairchild Semiconductor
• NPN Epitaxial Silicon Transistor
• 5页
• 63K

• 1126
• KSC2331
• Fairchild Semiconductor
• NPN Epitaxial Silicon Transistor
• 4页
• 129K

• 1127
• KSD1616
• Fairchild Semiconductor
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• 5页
• 2381K

• 1128
• KSD1616
• Micro Commercial Components
• NPN Silicon Epitaxial Transistor
• 1页
• 74K

• 1129
• KSD1616A
• Micro Commercial Components
• NPN Silicon Epitaxial Transistor
• 1页
• 74K

• 1130
• KSD1616A
• Fairchild Semiconductor
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• 5页
• 2381K

• 1131
• KSE13007F
• Fairchild Semiconductor
• NPN Silicon Transistor
• 5页
• 53K

• 1132
• K4M563233D-EE1H
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1133
• K4M563233D-EE1L
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1134
• K4M563233D-EE80
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1135
• K4M563233D-EI1H
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1136
• K4M563233D-EI1L
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1137
• K4M563233D-EI80
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1138
• K4M563233D-EN1H
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1139
• K4M563233D-EN1L
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1140
• K4M563233D-EN80
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1141
• K4M563233D-EP1H
• Samsung Semiconductor, Inc.
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• 8页
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• 1142
• K4M563233D-EP1L
• Samsung Semiconductor, Inc.
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• 8页
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• 1143
• K4M563233D-EP80
• Samsung Semiconductor, Inc.
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• 8页
• 65K

• 1144
• K4M563233D-ME1H
• Samsung Semiconductor, Inc.
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• 8页
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• 1145
• K4M563233D-ME1L
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• 8页
• 65K

• 1146
• K4M563233D-ME80
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
• 65K

• 1147
• K4M563233D-MI1H
• Samsung Semiconductor, Inc.
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• 8页
• 65K

• 1148
• K4M563233D-MI1L
• Samsung Semiconductor, Inc.
• 2M x 32 Bit x 4 Banks SDRAM in 90FBGA
• 8页
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• 1149
• K4M563233D-MI80
• Samsung Semiconductor, Inc.
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• 8页
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• 1150
• K4M563233D-MN1H
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