• 11851
• MSD4910C
• Fairchild Semiconductor
• 0.4INCH (10.1MM) TWO DIGIT STICK DISPLAY
• 7页
• 272K

• 11852
• MSD4940C
• Fairchild Semiconductor
• 0.4INCH (10.1MM) TWO DIGIT STICK DISPLAY
• 7页
• 272K

• 11853
• MSG43001
• Panasonic Industrial Sales (Taiwan) Co., Ltd.
• SiGe HBT Type Transistor
• 4页
• 89K

• 11854
• MSK0033
• M.S. Kennedy Corporation (MSK)
• FET INPUT HIGH SPEED VOLTAGE FOLLOWER/BUFFER AMPLIFIER
• 6页
• 449K

• 11855
• MSK0033B
• M.S. Kennedy Corporation (MSK)
• FET INPUT HIGH SPEED VOLTAGE FOLLOWER/BUFFER AMPLIFIER
• 6页
• 449K

• 11856
• MT3S31T
• Toshiba America, Inc.
• Transistor Silicon NPN Epitaxial Planar Type
• 3页
• 147K

• 11857
• MT5C128K8A1DJ-12L
• Micron Technology, Inc.
• 128K x 8 SRAM WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT
• 10页
• 75K

• 11858
• MT5C128K8A1DJ-15L
• Micron Technology, Inc.
• 128K x 8 SRAM WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT
• 10页
• 75K

• 11859
• MT5C128K8A1DJ-20L
• Micron Technology, Inc.
• 128K x 8 SRAM WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT
• 10页
• 75K

• 11860
• MT5C128K8A1DJ-25L
• Micron Technology, Inc.
• 128K x 8 SRAM WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT
• 10页
• 75K

• 11861
• MT5LDT472AG-5
• Micron Technology, Inc.
• 4 MEG x 72 BUFFERED DRAM DIMM
• 26页
• 438K

• 11862
• MT5LDT472AG-5X
• Micron Technology, Inc.
• 4 MEG x 72 BUFFERED DRAM DIMM
• 26页
• 438K

• 11863
• MT5LDT472AG-6
• Micron Technology, Inc.
• 4 MEG x 72 BUFFERED DRAM DIMM
• 26页
• 438K

• 11864
• MT5LDT472AG-6X
• Micron Technology, Inc.
• 4 MEG x 72 BUFFERED DRAM DIMM
• 26页
• 438K

• 11865
• MT6L58AE
• Toshiba America, Inc.
• TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
• 2页
• 139K

• 11866
• MT8971BE
• Zarlink Semiconductor Inc.
• Digital Subscriber Interface Circuit Digital Network Interface Circuit
• 15页
• 140K

• 11867
• MT8971BP
• Zarlink Semiconductor Inc.
• Digital Subscriber Interface Circuit Digital Network Interface Circuit
• 15页
• 140K

• 11868
• MT8972BC
• Zarlink Semiconductor Inc.
• Digital Subscriber Interface Circuit Digital Network Interface Circuit
• 15页
• 140K

• 11869
• MT8972BE
• Zarlink Semiconductor Inc.
• Digital Subscriber Interface Circuit Digital Network Interface Circuit
• 15页
• 140K

• 11870
• MT8972BP
• Zarlink Semiconductor Inc.
• Digital Subscriber Interface Circuit Digital Network Interface Circuit
• 15页
• 140K

• 11871
• MTB5000-G
• Marktech Optoelectronics
• LED Lamp Array
• 1页
• 66K

• 11872
• MTB5000-HR
• Marktech Optoelectronics
• LED Lamp Array
• 1页
• 66K

• 11873
• MTB5000-O
• Marktech Optoelectronics
• LED Lamp Array
• 1页
• 66K

• 11874
• MTB5000-RG
• Marktech Optoelectronics
• LED Lamp Array
• 1页
• 66K

• 11875
• MTB5000-UR
• Marktech Optoelectronics
• LED Lamp Array
• 1页
• 66K

• 11876
• MTB5000-Y
• Marktech Optoelectronics
• LED Lamp Array
• 1页
• 66K

• 11877
• MX29F4000PC-12
• Macronix International Co., Ltd.
• 4M-BIT (512KX8) CMOS EQUAL SECTOR FLASH MEMORY
• 37页
• 229K

• 11878
• MX29F4000PC-55
• Macronix International Co., Ltd.
• 4M-BIT (512KX8) CMOS EQUAL SECTOR FLASH MEMORY
• 37页
• 229K

• 11879
• MX29F4000PC-70
• Macronix International Co., Ltd.
• 4M-BIT (512KX8) CMOS EQUAL SECTOR FLASH MEMORY
• 37页
• 229K

• 11880
• MX29F4000PC-90
• Macronix International Co., Ltd.
• 4M-BIT (512KX8) CMOS EQUAL SECTOR FLASH MEMORY
• 37页
• 229K

• 11881
• MXB-1003-17
• Premier Devices, Inc.
• SURFACE MOUNT MIXER
• 1页
• 37K

• 11882
• M21L18128A-10J
• Elite Semiconductor Memory Technology Inc.
• 128k x 8 SRAM High Speed CMOS SRAM
• 14页
• 168K

• 11883
• M21L18128A-10T
• Elite Semiconductor Memory Technology Inc.
• 128k x 8 SRAM High Speed CMOS SRAM
• 14页
• 168K

• 11884
• M21L18128A-8J
• Elite Semiconductor Memory Technology Inc.
• 128k x 8 SRAM High Speed CMOS SRAM
• 14页
• 168K

• 11885
• M21L18128A-8T
• Elite Semiconductor Memory Technology Inc.
• 128k x 8 SRAM High Speed CMOS SRAM
• 14页
• 168K

• 11886
• M366S1623DT0-C1H
• Samsung Semiconductor, Inc.
• PC100 Unbuffered DIMM
• 9页
• 136K

• 11887
• M366S1623DT0-C1L
• Samsung Semiconductor, Inc.
• PC100 Unbuffered DIMM
• 9页
• 136K

• 11888
• M366S1623DT0-C75
• Samsung Semiconductor, Inc.
• PC133 Unbuffered DIMM
• 10页
• 154K

• 11889
• M366S1623DT0-C7A
• Samsung Semiconductor, Inc.
• PC133 Unbuffered DIMM
• 10页
• 154K

• 11890
• M366S1623DT0-C80
• Samsung Semiconductor, Inc.
• PC100 Unbuffered DIMM
• 9页
• 136K

• 11891
• M366S3323CT0-C75
• Samsung Semiconductor, Inc.
• 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
• 10页
• 154K

• 11892
• M48T201V-85MH1
• ST Microelectronics
• 3.3 V TIMEKEEPER Supervisor
• 32页
• 448K

• 11893
• M48T201V-85MH1TR
• ST Microelectronics
• 3.3 V TIMEKEEPER Supervisor
• 32页
• 448K

• 11894
• M48T201V-85MH6
• ST Microelectronics
• 3.3 V TIMEKEEPER Supervisor
• 32页
• 448K

• 11895
• M48T201V-85MH6TR
• ST Microelectronics
• 3.3 V TIMEKEEPER Supervisor
• 32页
• 448K

• 11896
• M48T201Y-70MH1
• ST Microelectronics
• 5.0 V TIMEKEEPER Supervisor
• 32页
• 448K

• 11897
• M48T201Y-70MH1TR
• ST Microelectronics
• 5.0 V TIMEKEEPER Supervisor
• 32页
• 448K

• 11898
• M48T201Y-70MH6
• ST Microelectronics
• 5.0 V TIMEKEEPER Supervisor
• 32页
• 448K

• 11899
• M48T201Y-70MH6TR
• ST Microelectronics
• 5.0 V TIMEKEEPER Supervisor
• 32页
• 448K

• 11900
• M51951AL
• Renesas Technology America, Inc.
• Voltage Detection, System Resetting IC
• 5页
• 1853K