• 10051
• GS73024B-15
• GSI Technology
• 128K x 24 6Mb Asynchronous SRAM
• 11页
• 218K

• 10052
• GS73024B-15I
• GSI Technology
• 128K x 24 6Mb Asynchronous SRAM
• 11页
• 218K

• 10053
• GA-3463-TR1
• Sirenza Microdevices, Inc.
• DC-2000 MHz Silicon Germanium HBT Cascadeable Gain Block
• 7页
• 266K

• 10054
• GS816118T-133
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10055
• GS816118T-133I
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10056
• GS816118T-133IT
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10057
• GS816118T-133T
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10058
• GS816118T-150
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10059
• GS816118T-150I
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10060
• GS816118T-150IT
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10061
• GS816118T-150T
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10062
• GS816118T-166
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10063
• GS816118T-166I
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10064
• GS816118T-166IT
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10065
• GS816118T-166T
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10066
• GS816118T-200
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10067
• GS816118T-200T
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10068
• GS816118T-225
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10069
• GS816118T-225T
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10070
• GS816118T-250
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10071
• GS816118T-250T
• GSI Technology
• 1M x 18 18Mb Sync Burst SRAM
• 36页
• 895K

• 10072
• GS816136T-133
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10073
• GS816136T-133I
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10074
• GS816136T-133IT
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10075
• GS816136T-133T
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10076
• GS816136T-150
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10077
• GS816136T-150I
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10078
• GS816136T-150IT
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10079
• GS816136T-150T
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10080
• GS816136T-166
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10081
• GS816136T-166I
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10082
• GS816136T-166IT
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10083
• GS816136T-166T
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10084
• GS816136T-200
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10085
• GS816136T-200T
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10086
• GS816136T-225
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10087
• GS816136T-225T
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10088
• GS816136T-250
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10089
• GS816136T-250T
• GSI Technology
• 512K x 36 18Mb Sync Burst SRAM
• 36页
• 895K

• 10090
• GA150TD120U
• International Rectifier Corp.
• HALF-BRIDGE IGBT DOUBLE INT-A-PAK
• 10页
• 181K

• 10091
• GT20J321
• Toshiba America, Inc.
• Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• 7页
• 329K

• 10092
• GVT71128C32T-5
• Cypress Semiconductor Corporation
• 128K x 32 Synchronous-Pipelined RAM
• 12页
• 284K

• 10093
• GVT71128C32T-6
• Cypress Semiconductor Corporation
• 128K x 32 Synchronous-Pipelined RAM
• 12页
• 284K

• 10094
• GVT71128C32T-6I
• Cypress Semiconductor Corporation
• 128K x 32 Synchronous-Pipelined RAM
• 12页
• 284K

• 10095
• GVT71128C32T-7
• Cypress Semiconductor Corporation
• 128K x 32 Synchronous-Pipelined RAM
• 12页
• 284K

• 10096
• GVT71128C32T-7I
• Cypress Semiconductor Corporation
• 128K x 32 Synchronous-Pipelined RAM
• 12页
• 284K

• 10097
• GVT71128G36B-3
• Cypress Semiconductor Corporation
• 128K x 36 Synchronous Pipelined Burst SRAM
• 16页
• 467K

• 10098
• GVT71128G36B-4
• Cypress Semiconductor Corporation
• 128K x 36 Synchronous Pipelined Burst SRAM
• 16页
• 467K

• 10099
• GVT71128G36B-5
• Cypress Semiconductor Corporation
• 128K x 36 Synchronous Pipelined Burst SRAM
• 16页
• 467K

• 10100
• GVT71128G36B-6
• Cypress Semiconductor Corporation
• 128K x 36 Synchronous Pipelined Burst SRAM
• 16页
• 467K