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开关,直流到直流调节器,控制器
NO.
IC型号
描述
厂家
页数
文件大小
9001
JANSF2N7268
International Rectifier Corp.
RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-254AA)
12页
444K
9002
JANSG2N7268
International Rectifier Corp.
RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-254AA)
12页
444K
9003
JANSH2N7268
International Rectifier Corp.
RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-254AA)
12页
444K
9004
JANSR2N7268
International Rectifier Corp.
RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-254AA)
12页
444K
9005
JANTX2N6802
International Rectifier Corp.
HEXFET TRANSISTOR THRU-HOLE (TO-205AF)
7页
129K
9006
JANTX2N6851
International Rectifier Corp.
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564 2
7页
131K
9007
JANTX2N7218
Omnirel
100V Thru 500V, Up to 28A, N-Channel,MOSFET Power Transistor, Repetitive A valanche Rated
5页
61K
9008
JANTX2N7222
Omnirel
100V Thru 500V, Up to 28A, N-Channel,MOSFET Power Transistor, Repetitive A valanche Rated
5页
61K
9009
JANTXV2N6802
International Rectifier Corp.
HEXFET TRANSISTOR THRU-HOLE (TO-205AF)
7页
129K
9010
JANTXV2N6851
International Rectifier Corp.
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564 2
7页
131K
9011
JANTXV2N7218
Omnirel
100V Thru 500V, Up to 28A, N-Channel,MOSFET Power Transistor, Repetitive A valanche Rated
5页
61K
9012
JANTXV2N7222
Omnirel
100V Thru 500V, Up to 28A, N-Channel,MOSFET Power Transistor, Repetitive A valanche Rated
5页
61K
9013
KMC908JB8ADW
Motorola Inc.
8-bit Microcontroller
2页
60K
9014
KMC908JB8FB
Motorola Inc.
8-bit Microcontroller
2页
60K
9015
KP4040
Cosmo Electronics Corporation
High Reliability Photo Coupler
2页
215K
9016
KSD5701
Fairchild Semiconductor
NPN Triple Diffused Planar Silicon Transistor
5页
65K
9017
KSP10
Fairchild Semiconductor
NPN Epitaxial Silicon Transistor
5页
51K
9018
K4S510432B-TC75
Samsung Semiconductor, Inc.
32M x 4 Bit x 4 Banks SDRAM
15页
149K
9019
K4S510432B-TL75
Samsung Semiconductor, Inc.
32M x 4 Bit x 4 Banks SDRAM
15页
149K
9020
K4S510832B-TC75
Samsung Semiconductor, Inc.
16M x 8 Bit x 4 Banks SDRAM
15页
149K
9021
K4S510832B-TL75
Samsung Semiconductor, Inc.
16M x 8 Bit x 4 Banks SDRAM
15页
149K
9022
K4S511632B-TC75
Samsung Semiconductor, Inc.
8M x 16 Bit x 4 Banks SDRAM
15页
149K
9023
K4S511632B-TL75
Samsung Semiconductor, Inc.
8M x 16 Bit x 4 Banks SDRAM
15页
149K
9024
K6R4004C1D-JC10
Samsung Semiconductor, Inc.
1M x 4 Bit High-Speed CMOS Static RAM
9页
177K
9025
K6R4004C1D-JI10
Samsung Semiconductor, Inc.
1M x 4 Bit High-Speed CMOS Static RAM
9页
177K
9026
K6R4004V1D-C10
Samsung Semiconductor, Inc.
1M x 4 Bit (with inverted OE)High-Speed CMOS Static RAM
8页
90K
9027
K6R4004V1D-C12
Samsung Semiconductor, Inc.
1M x 4 Bit (with inverted OE)High-Speed CMOS Static RAM
8页
90K
9028
K6R4004V1D-C15
Samsung Semiconductor, Inc.
1M x 4 Bit (with inverted OE)High-Speed CMOS Static RAM
8页
90K
9029
K6R4004V1D-C8
Samsung Semiconductor, Inc.
1M x 4 Bit (with inverted OE)High-Speed CMOS Static RAM
8页
90K
9030
K6R4004V1D-I10
Samsung Semiconductor, Inc.
1M x 4 Bit (with inverted OE)High-Speed CMOS Static RAM
8页
90K
9031
K6R4004V1D-I12
Samsung Semiconductor, Inc.
1M x 4 Bit (with inverted OE)High-Speed CMOS Static RAM
8页
90K
9032
K6R4004V1D-I15
Samsung Semiconductor, Inc.
1M x 4 Bit (with inverted OE)High-Speed CMOS Static RAM
8页
90K
9033
K6R4004V1D-I8
Samsung Semiconductor, Inc.
1M x 4 Bit (with inverted OE)High-Speed CMOS Static RAM
8页
90K
9034
K6R4008V1D-JC08
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
209K
9035
K6R4008V1D-JC10
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
209K
9036
K6R4008V1D-JI08
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
209K
9037
K6R4008V1D-JI10
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
209K
9038
K6R4008V1D-TC08
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
209K
9039
K6R4008V1D-TC10
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
209K
9040
K6R4008V1D-TI08
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
209K
9041
K6R4008V1D-TI10
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
209K
9042
K6R4016C1D-EC10
Samsung Semiconductor, Inc.
256k x 16 Bit High-Speed CMOS Static RAM
12页
299K
9043
K6R4016C1D-EI10
Samsung Semiconductor, Inc.
256k x 16 Bit High-Speed CMOS Static RAM
12页
299K
9044
K6R4016C1D-JC10
Samsung Semiconductor, Inc.
256k x 16 Bit High-Speed CMOS Static RAM
12页
299K
9045
K6R4016C1D-JI10
Samsung Semiconductor, Inc.
256k x 16 Bit High-Speed CMOS Static RAM
12页
299K
9046
K6R4016C1D-TC10
Samsung Semiconductor, Inc.
256k x 16 Bit High-Speed CMOS Static RAM
12页
299K
9047
K6R4016C1D-TI10
Samsung Semiconductor, Inc.
256k x 16 Bit High-Speed CMOS Static RAM
12页
299K
9048
K6R4016V1D-EC08
Samsung Semiconductor, Inc.
256k x 16 Bit High-Speed CMOS Static RAM
12页
224K
9049
K6R4016V1D-EC10
Samsung Semiconductor, Inc.
256k x 16 Bit High-Speed CMOS Static RAM
12页
224K
9050
K6R4016V1D-EI08
Samsung Semiconductor, Inc.
256k x 16 Bit High-Speed CMOS Static RAM
12页
224K
共 12038 | 241 页 | 第 181 页 |
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