• 4401
• FX629J
• Consumer Microcircuits Limited (CML)
• Delta Modulation Codec
• 10页
• 89K

• 4402
• FXT753
• Zetex Semiconductors
• PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
• 1页
• 42K

• 4403
• FAN4855
• Fairchild Semiconductor
• Adjustable, Low-Current, 2-Cell Boost Regulator with Shutdown and Low Battery Detect
• 12页
• 156K

• 4404
• FAN4855MUX
• Fairchild Semiconductor
• Adjustable, Low-Current, 2-Cell Boost Regulator with Shutdown and Low Battery Detect
• 12页
• 156K

• 4405
• FAR-C4CG-08000-M05
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4406
• FAR-C4CG-08000-M15
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4407
• FAR-C4CG-10000-M05
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4408
• FAR-C4CG-10000-M15
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4409
• FAR-C4CG-11000-M02
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4410
• FAR-C4CG-11000-M12
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4411
• FAR-C4CG-11059-M02
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4412
• FAR-C4CG-11059-M12
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4413
• FAR-C4CG-12000-M02
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4414
• FAR-C4CG-12000-M12
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4415
• FAR-C4CG-16000-M02
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4416
• FAR-C4CG-16000-M12
• Fujitsu Quantum Devices Limited
• Piezoelectric Resonator
• 9页
• 59K

• 4417
• FCL10A015
• Nihon Inter Electronics Corp.
• Bridge Rectifier
• 2页
• 28K

• 4418
• FDB070AN06A0
• Fairchild Semiconductor
• N-Channel PowerTrench MOSFET 60 V, 80 A, 7 mohm
• 12页
• 599K

• 4419
• FDC97W33x
• Standard Microsystems Corporation
• Integrated I/O Controller with Wakeup Features
• 158页
• 624K

• 4420
• FDP070AN06A0
• Fairchild Semiconductor
• N-Channel PowerTrench MOSFET 60 V, 80 A, 7 mohm
• 12页
• 599K

• 4421
• FDS3692
• Fairchild Semiconductor
• N-Channel PowerTrench MOSFET 100 V, 4.5 A, 60 mohm
• 11页
• 277K

• 4422
• FDS6994S
• Fairchild Semiconductor
• Dual Notebook Power Supply N-Channel PowerTrench SyncFet
• 9页
• 187K

• 4423
• FGA10
• Thorlabs, Inc.
• InGaAs Photodiode
• 2页
• 41K

• 4424
• FJA4313O
• Fairchild Semiconductor
• NPN Epitaxial Silicon Transistor
• 5页
• 83K

• 4425
• FJA4313R
• Fairchild Semiconductor
• NPN Epitaxial Silicon Transistor
• 5页
• 83K

• 4426
• FJL4215O
• Fairchild Semiconductor
• PNP Epitaxial Silicon Transistor
• 4页
• 66K

• 4427
• FJL4215R
• Fairchild Semiconductor
• PNP Epitaxial Silicon Transistor
• 4页
• 66K

• 4428
• FJL4315O
• Fairchild Semiconductor
• NPN Epitaxial Silicon Transistor
• 5页
• 64K

• 4429
• FJL4315R
• Fairchild Semiconductor
• NPN Epitaxial Silicon Transistor
• 5页
• 64K

• 4430
• GA600HD25S
• International Rectifier Corp.
• SINGLE SWITCH IGBT DOUBLE INT-A-Pak
• 10页
• 229K

• 4431
• GS882Z18B-100
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4432
• GS882Z18B-100I
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4433
• GS882Z18B-100IT
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4434
• GS882Z18B-100T
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4435
• GS882Z18B-11
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4436
• GS882Z18B-11I
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4437
• GS882Z18B-11IT
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4438
• GS882Z18B-11T
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4439
• GS882Z18B-66
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4440
• GS882Z18B-66I
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4441
• GS882Z18B-66IT
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4442
• GS882Z18B-66T
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4443
• GS882Z18B-80
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4444
• GS882Z18B-80I
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4445
• GS882Z18B-80IT
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4446
• GS882Z18B-80T
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4447
• GS882Z36B-100
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4448
• GS882Z36B-100I
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4449
• GS882Z36B-100IT
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K

• 4450
• GS882Z36B-100T
• GSI Technology
• 8Mb Pipelined and Flow Through Synchronous NBT SRAM
• 34页
• 802K