• 3401
• KRA301
• KEC
• Epitaxial Planar PNP Transistor
• 页
• K

• 3402
• KRA302
• KEC
• Epitaxial Planar PNP Transistor
• 页
• K

• 3403
• KRA303
• KEC
• Epitaxial Planar PNP Transistor
• 页
• K

• 3404
• KRA304
• KEC
• Epitaxial Planar PNP Transistor
• 页
• K

• 3405
• KRA305
• KEC
• Epitaxial Planar PNP Transistor
• 页
• K

• 3406
• KRA306
• KEC
• Epitaxial Planar PNP Transistor
• 页
• K

• 3407
• KSD425AC8
• Cosmo Electronics Corporation
• Solid State Relay
• 2页
• 303K

• 3408
• KSF30A60B
• Nihon Inter Electronics Corp.
• Rectifier Diode
• 2页
• 32K

• 3409
• K3P6C2000B-SC10
• Samsung Semiconductor, Inc.
• Mask ROM
• 页
• K

• 3410
• K3P6C2000B-SC12
• Samsung Semiconductor, Inc.
• Mask ROM
• 页
• K

• 3411
• K3P6C2000B-SC15
• Samsung Semiconductor, Inc.
• Mask ROM
• 页
• K

• 3412
• K4C89183AF-ACF5
• Samsung Semiconductor, Inc.
• 4,194,304 Word x 4 Banks x 18 Bit Double Data Rate Network-DRAM
• 60页
• 1902K

• 3413
• K4C89183AF-ACF6
• Samsung Semiconductor, Inc.
• 4,194,304 Word x 4 Banks x 18 Bit Double Data Rate Network-DRAM
• 60页
• 1902K

• 3414
• K4C89183AF-ACFB
• Samsung Semiconductor, Inc.
• 4,194,304 Word x 4 Banks x 18 Bit Double Data Rate Network-DRAM
• 60页
• 1902K

• 3415
• K4C89183AF-AIF5
• Samsung Semiconductor, Inc.
• 4,194,304 Word x 4 Banks x 18 Bit Double Data Rate Network-DRAM
• 60页
• 1902K

• 3416
• K4S511632C-KC1H
• Samsung Semiconductor, Inc.
• 8M x 16 Bit x 4 Banks Synchronous DRAM
• 11页
• 60K

• 3417
• K4S511632C-KC1L
• Samsung Semiconductor, Inc.
• 8M x 16 Bit x 4 Banks Synchronous DRAM
• 11页
• 60K

• 3418
• K4S511632C-KC75
• Samsung Semiconductor, Inc.
• 8M x 16 Bit x 4 Banks Synchronous DRAM
• 11页
• 60K

• 3419
• K4S511632C-KC7C
• Samsung Semiconductor, Inc.
• 8M x 16 Bit x 4 Banks Synchronous DRAM
• 11页
• 60K

• 3420
• K4S511632C-KL1H
• Samsung Semiconductor, Inc.
• 8M x 16 Bit x 4 Banks Synchronous DRAM
• 11页
• 60K

• 3421
• K4S511632C-KL1L
• Samsung Semiconductor, Inc.
• 8M x 16 Bit x 4 Banks Synchronous DRAM
• 11页
• 60K

• 3422
• K4S511632C-KL75
• Samsung Semiconductor, Inc.
• 8M x 16 Bit x 4 Banks Synchronous DRAM
• 11页
• 60K

• 3423
• K4S511632C-KL7C
• Samsung Semiconductor, Inc.
• 8M x 16 Bit x 4 Banks Synchronous DRAM
• 11页
• 60K

• 3424
• K6F1616T6C-FF55
• Samsung Semiconductor, Inc.
• 1M x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM
• 9页
• 173K

• 3425
• K6F1616T6C-FF70
• Samsung Semiconductor, Inc.
• 1M x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM
• 9页
• 173K

• 3426
• K6F8016R6B-EF70
• Samsung Semiconductor, Inc.
• 512k x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM
• 9页
• 157K

• 3427
• K6F8016R6B-EF85
• Samsung Semiconductor, Inc.
• 512k x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM
• 9页
• 157K

• 3428
• K6R1016V1C-FC10
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3429
• K6R1016V1C-FC12
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3430
• K6R1016V1C-FC15
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3431
• K6R1016V1C-FI10
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3432
• K6R1016V1C-FI12
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3433
• K6R1016V1C-FI15
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3434
• K6R1016V1C-JC10
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3435
• K6R1016V1C-JC12
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3436
• K6R1016V1C-JC15
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3437
• K6R1016V1C-JI10
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3438
• K6R1016V1C-JI12
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3439
• K6R1016V1C-JI15
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3440
• K6R1016V1C-TC10
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3441
• K6R1016V1C-TC12
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3442
• K6R1016V1C-TC15
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3443
• K6R1016V1C-TI10
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3444
• K6R1016V1C-TI12
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3445
• K6R1016V1C-TI15
• Samsung Semiconductor, Inc.
• 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
• 11页
• 141K

• 3446
• K6R4016C1C-C10
• Samsung Semiconductor, Inc.
• 256K x 16 Bit High-Speed CMOS Static RAM
• 11页
• 184K

• 3447
• K6R4016C1C-C12
• Samsung Semiconductor, Inc.
• 256K x 16 Bit High-Speed CMOS Static RAM
• 11页
• 184K

• 3448
• K6R4016C1C-C15
• Samsung Semiconductor, Inc.
• 256K x 16 Bit High-Speed CMOS Static RAM
• 11页
• 184K

• 3449
• K6R4016C1C-E10
• Samsung Semiconductor, Inc.
• 256K x 16 Bit High-Speed CMOS Static RAM
• 11页
• 184K

• 3450
• K6R4016C1C-E12
• Samsung Semiconductor, Inc.
• 256K x 16 Bit High-Speed CMOS Static RAM
• 11页
• 184K