• 2001
• OM6060SB
• International Rectifier Corp.
• Power MOSFET in a Hermetic Isolated Power Block Package
• 2页
• 29K

• 2002
• OM6061SB
• International Rectifier Corp.
• Power MOSFET in a Hermetic Isolated Power Block Package
• 2页
• 29K

• 2003
• OM60N10SC
• International Rectifier Corp.
• Low Voltage, Low Rds(on) Power MOSFET in Hermetic Isolated Package
• 8页
• 75K

• 2004
• OM75N05SA
• International Rectifier Corp.
• Low Voltage, Low Rds(on) Power MOSFET in Hermetic Isolated Package
• 8页
• 75K

• 2005
• OM75N05SC
• International Rectifier Corp.
• Low Voltage, Low Rds(on) Power MOSFET in Hermetic Isolated Package
• 8页
• 75K

• 2006
• OM75N06SA
• International Rectifier Corp.
• Low Voltage, Low Rds(on) Power MOSFET in Hermetic Isolated Package
• 8页
• 75K

• 2007
• OM75N06SC
• International Rectifier Corp.
• Low Voltage, Low Rds(on) Power MOSFET in Hermetic Isolated Package
• 8页
• 75K

• 2008
• OM7670N2
• International Rectifier Corp.
• 0.75 A Low Dropout 3.3 V Positive Regulator
• 3页
• 433K

• 2009
• OM7670NK
• International Rectifier Corp.
• 1.5 A Low Dropout 3.3 V Positive Regulator
• 3页
• 433K

• 2010
• OM7670NM
• International Rectifier Corp.
• 1.3 A Low Dropout 3.3 V Positive Regulator
• 3页
• 433K

• 2011
• OM7670SM
• International Rectifier Corp.
• 1.3 A Low Dropout 3.3 V Positive Regulator
• 3页
• 433K

• 2012
• OM7670ST
• International Rectifier Corp.
• 1.3 A Low Dropout 3.3 V Positive Regulator
• 3页
• 433K

• 2013
• OM7671NK
• International Rectifier Corp.
• 3 A Low Dropout 3.3 V Positive Regulator
• 3页
• 433K

• 2014
• OM7671NM
• International Rectifier Corp.
• 2.6 A Low Dropout 3.3 V Positive Regulator
• 3页
• 433K

• 2015
• OM7671SM
• International Rectifier Corp.
• 2.6 A Low Dropout 3.3 V Positive Regulator
• 3页
• 433K

• 2016
• OM7671ST
• International Rectifier Corp.
• 2.6 A Low Dropout 3.3 V Positive Regulator
• 3页
• 433K

• 2017
• OMY140
• International Rectifier Corp.
• Power MOSFET in Hermetic Isolated TO-257AA Package
• 4页
• 40K

• 2018
• OMY240
• International Rectifier Corp.
• Power MOSFET in Hermetic Isolated TO-257AA Package
• 4页
• 40K

• 2019
• OMY340
• International Rectifier Corp.
• Power MOSFET in Hermetic Isolated TO-257AA Package
• 4页
• 40K

• 2020
• OMY440
• International Rectifier Corp.
• Power MOSFET in Hermetic Isolated TO-257AA Package
• 4页
• 40K

• 2021
• PDIUSBD12
• Philips Semiconductors
• high-speed USB peripheral interface
• 2页
• 806K

• 2022
• PDTA114YEF
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 47 kohm
• 16页
• 79K

• 2023
• PDTA114YK
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 47 kohm
• 16页
• 79K

• 2024
• PDTA114YM
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 47 kohm
• 16页
• 79K

• 2025
• PDTA114YS
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 47 kohm
• 16页
• 79K

• 2026
• PDTA114YT
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 47 kohm
• 16页
• 79K

• 2027
• PDTA114YU
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 47 kohm
• 16页
• 79K

• 2028
• PDTA123JE
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2029
• PDTA123JEF
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2030
• PDTA123JK
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2031
• PDTA123JM
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2032
• PDTA123JS
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2033
• PDTA123JT
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2034
• PDTA123JU
• Philips Semiconductors
• PNP Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2035
• PDTC123JE
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2036
• PDTC123JEF
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2037
• PDTC123JK
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2038
• PDTC123JM
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2039
• PDTC123JS
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2040
• PDTC123JT
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2041
• PDTC123JU
• Philips Semiconductors
• NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm
• 16页
• 84K

• 2042
• PE-65854
• Pulse Engineering, Inc.
• ISDN S-INTERFACE TRANSFORMER
• 2页
• 61K

• 2043
• PE-68624
• Pulse Engineering, Inc.
• ISDN S-INTERFACE TRANSFORMER
• 2页
• 61K

• 2044
• PEF80902
• Infineon Technologies Corporation
• 4B3T Second Gen. Modular ISDN NT (Ordinary)
• 83页
• 1566K

• 2045
• PEMH1
• Philips Semiconductors
• NPN Resistor-Equipped Transistors, R1 = 22 kohm, R2 = 22 kohm
• 8页
• 55K

• 2046
• PH3134-11S
• M/A-COM
• Radar Pulsed Power Transistor, 11 W, lus Pulse, 10% Duty 3.1-3.4 GHz
• 2页
• 157K

• 2047
• PI3B16248B
• Pericom Semiconductor
• 3.3 V, 24 Bit to 48 Bit Demux/Mux NanoSwitch
• 5页
• 296K

• 2048
• PI3B3383L
• Pericom Semiconductor
• Bus Exchanger
• 页
• K

• 2049
• PI3B3383Q
• Pericom Semiconductor
• Bus Exchanger
• 页
• K

• 2050
• PI5C3305L
• Pericom Semiconductor
• 2 Bit Bus Switch with Individual Enables
• 3页
• 38K