• 101
• 1SMC8.0A
• Central Semiconductor Corporation
• UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 388K

• 102
• 1SMC8.0AT3
• ON Semiconductor
• 1500 W Peak Power Zener Transient Voltage Suppressor
• 8页
• 69K

• 103
• 1SMC8.0CA
• Central Semiconductor Corporation
• BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 397K

• 104
• 1SMC8.5A
• Central Semiconductor Corporation
• UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 388K

• 105
• 1SMC8.5AT3
• ON Semiconductor
• 1500 W Peak Power Zener Transient Voltage Suppressor
• 8页
• 69K

• 106
• 1SMC8.5CA
• Central Semiconductor Corporation
• BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 397K

• 107
• 1SMC85A
• Central Semiconductor Corporation
• UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 388K

• 108
• 1SMC85CA
• Central Semiconductor Corporation
• BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 397K

• 109
• 1SMC9.0A
• Central Semiconductor Corporation
• UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 388K

• 110
• 1SMC9.0AT3
• ON Semiconductor
• 1500 W Peak Power Zener Transient Voltage Suppressor
• 8页
• 69K

• 111
• 1SMC9.0CA
• Central Semiconductor Corporation
• BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 397K

• 112
• 1SMC90A
• Central Semiconductor Corporation
• UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 388K

• 113
• 1SMC90CA
• Central Semiconductor Corporation
• BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
• 2页
• 397K

• 114
• 1SS350
• Sanyo Semiconductor Corporation
• Silicon Epitaxial Schottky Barrier Diode
• 2页
• 53K

• 115
• 1SS356
• ROHM CO., LTD.
• Band Switching Diode
• 2页
• 51K

• 116
• 1SS358
• Sanyo Semiconductor Corporation
• Schottky Barrier Diode
• 2页
• 50K

• 117
• 1SS360
• Toshiba America, Inc.
• Silicon Epitaxial Planar Type
• 2页
• 110K

• 118
• 1SS360F
• Toshiba America, Inc.
• Diode
• 3页
• 157K

• 119
• 1SS361
• Toshiba America, Inc.
• Silicon Epitaxial Planar Type
• 2页
• 154K

• 120
• 1SS362
• Toshiba America, Inc.
• DIODE
• 2页
• 122K

• 121
• 1SS364
• Toshiba America, Inc.
• Diode Silicon Epitaxial Planar type
• 2页
• 89K

• 122
• 1SS365
• Sanyo Semiconductor Corporation
• Schottky Barrier Diode
• 2页
• 49K

• 123
• 1SS366
• Sanyo Semiconductor Corporation
• Schottky Barrier Diode
• 2页
• 50K

• 124
• 1SS367
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 106K

• 125
• 1SS368
• Toshiba America, Inc.
• Silicon Epitaxial Planar Type
• 3页
• 108K

• 126
• 1SS369
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 133K

• 127
• 1SS372
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 145K

• 128
• 1SS373
• Toshiba America, Inc.
• DIODE
• 2页
• 121K

• 129
• 1SS374
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 156K

• 130
• 1SS375
• Sanyo Semiconductor Corporation
• Schottky Barrier Diode
• 2页
• 50K

• 131
• 1SS376
• ROHM CO., LTD.
• Switching diode
• 2页
• 53K

• 132
• 1SS377
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 148K

• 133
• 1SS378
• Toshiba America, Inc.
• Epitaxial Planar Schottky Barrier Type
• 2页
• 114K

• 134
• 1SS379
• Toshiba America, Inc.
• DIODE SILICON EPITAXIAL PLANAR
• 2页
• 117K

• 135
• 1SS381
• Toshiba America, Inc.
• Diode Silicon Epitaxial Planar Type
• 2页
• 90K

• 136
• 1SS382
• Toshiba America, Inc.
• Silicon Epitaxial Planar Type
• 2页
• 148K

• 137
• 1SS383
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 127K

• 138
• 1SS384
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 134K

• 139
• 1SS385
• Toshiba America, Inc.
• DIODE
• 2页
• 124K

• 140
• 1SS385F
• Toshiba America, Inc.
• Diode Silicon Epitaxial Schottky Barrier Type
• 3页
• 148K

• 141
• 1SS389
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 143K

• 142
• 1SS390
• ROHM CO., LTD.
• Band Switching Diode
• 2页
• 51K

• 143
• 1SS391
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 117K

• 144
• 1SS392
• Toshiba America, Inc.
• DIODE
• 2页
• 123K

• 145
• 1SS393
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 3页
• 151K

• 146
• 1SS394
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 145K

• 147
• 1SS395
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 147K

• 148
• 1SS396
• Toshiba America, Inc.
• Silicon Epitaxial Schottky Barrier Type
• 2页
• 147K

• 149
• 1SS397
• Toshiba America, Inc.
• Silicon Epitaxial Planar Diode
• 3页
• 184K

• 150
• 1SS399
• Toshiba America, Inc.
• Silicon Epitaxial Planar Diode
• 3页
• 185K