• 3351
• HSB83
• Renesas Technology America, Inc.
• Silicon Epitaxial Planar Diode for High Voltage Switching
• 7页
• 74K

• 3352
• HSB857D
• Hi-Sincerity Microelectronics Corp.
• PNP Epitaxial Planar Transistor
• 4页
• 35K

• 3353
• HSB88WS
• Renesas Technology America, Inc.
• Silicon Schottky Barrier Diode for Balanced Mixer
• 7页
• 76K

• 3354
• HSD1159
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 3页
• 34K

• 3355
• HSD1609
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 4页
• 37K

• 3356
• HSD1609S
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 4页
• 39K

• 3357
• HSD1616A
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 4页
• 39K

• 3358
• HSD313
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 4页
• 43K

• 3359
• HSD468
• Hi-Sincerity Microelectronics Corp.
• NPN EPITAXIAL PLANAR TRANSISTOR
• 4页
• 39K

• 3360
• HSD471A
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 4页
• 39K

• 3361
• HSD667A
• Hi-Sincerity Microelectronics Corp.
• Silicon NPN Epitaxial Transistor
• 4页
• 39K

• 3362
• HSD669A
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 3页
• 35K

• 3363
• HSD879
• Hi-Sincerity Microelectronics Corp.
• Silicon NPN Epitaxial Type Transistor
• 3页
• 30K

• 3364
• HSD879D
• Hi-Sincerity Microelectronics Corp.
• Silicon NPN Epitaxial Type Transistor
• 3页
• 32K

• 3365
• HSD880
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 3页
• 34K

• 3366
• HSD882
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 4页
• 41K

• 3367
• HSD882S
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 4页
• 42K

• 3368
• HSD965
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 3页
• 32K

• 3369
• HSDL-1001
• Hewlett-Packard Company
• Infrared IrDA Compliant Transceiver
• 8页
• 115K

• 3370
• HSDL-1100#007
• Agilent Technologies
• Infrared Transceiver
• 12页
• 237K

• 3371
• HSDL-1100#008
• Agilent Technologies
• Infrared Transceiver
• 12页
• 237K

• 3372
• HSDL-1100#017
• Agilent Technologies
• Infrared Transceiver
• 12页
• 237K

• 3373
• HSDL-1100#018
• Agilent Technologies
• Infrared Transceiver
• 12页
• 237K

• 3374
• HSDL-1100#S07
• Agilent Technologies
• Infrared Transceiver
• 12页
• 237K

• 3375
• HSDL-3000#007
• Agilent Technologies
• IrDA Data Compliant 115.2 kbps Infrared Transceiver
• 16页
• 265K

• 3376
• HSDL-3000#017
• Agilent Technologies
• IrDA Data Compliant 115.2 kbps Infrared Transceiver
• 16页
• 265K

• 3377
• HSDL-3208-021
• Agilent Technologies
• Ultra Small Profile Package IrDA Data Compliant Low Power 115.2 kbit/s Infrared Transceiver
• 22页
• 224K

• 3378
• HSDL-3208-S21
• Agilent Technologies
• Ultra Small Profile Package IrDA Data Compliant Low Power 115.2 kbit/s Infrared Transceiver
• 22页
• 224K

• 3379
• HSDL-3600#007
• Agilent Technologies
• IrDA Compliant 4 Mb/s 3 V Infrared Transceiver
• 34页
• 567K

• 3380
• HSDL-3600#008
• Agilent Technologies
• IrDA Compliant 4 Mb/s 3 V Infrared Transceiver
• 34页
• 567K

• 3381
• HSDL-3600#017
• Agilent Technologies
• IrDA Compliant 4 Mb/s 3 V Infrared Transceiver
• 34页
• 567K

• 3382
• HSDL-3600#018
• Agilent Technologies
• IrDA Compliant 4 Mb/s 3 V Infrared Transceiver
• 34页
• 567K

• 3383
• HSDL-3600#107
• Agilent Technologies
• IrDA Compliant 4 Mb/s 3 V Infrared Transceiver
• 34页
• 567K

• 3384
• HSDL-3600#117
• Agilent Technologies
• IrDA Compliant 4 Mb/s 3 V Infrared Transceiver
• 34页
• 567K

• 3385
• HSDL-3602-007
• Agilent Technologies
• IrDA Data 1.4 Compliant 4 Mb/s 3 V Infrared Transceiver
• 28页
• 434K

• 3386
• HSDL-3602-008
• Agilent Technologies
• IrDA Data 1.4 Compliant 4 Mb/s 3 V Infrared Transceiver
• 28页
• 434K

• 3387
• HSDL-3602-037
• Agilent Technologies
• IrDA Data 1.4 Compliant 4 Mb/s 3 V Infrared Transceiver
• 28页
• 434K

• 3388
• HSDL-3602-038
• Agilent Technologies
• IrDA Data 1.4 Compliant 4 Mb/s 3 V Infrared Transceiver
• 28页
• 434K

• 3389
• HSK1118
• Hi-Sincerity Microelectronics Corp.
• Field Effect Transistor
• 5页
• 61K

• 3390
• HSK120
• Renesas Technology America, Inc.
• Silicon Epitaxial Planar Diode for High Speed Switching
• 7页
• 78K

• 3391
• HSK122
• Renesas Technology America, Inc.
• Silicon Epitaxial Planar Diode for High Voltage Switching
• 7页
• 77K

• 3392
• HSK2474I
• Hi-Sincerity Microelectronics Corp.
• N-Channel MOSFET
• 5页
• 51K

• 3393
• HSK2474J
• Hi-Sincerity Microelectronics Corp.
• N-Channel MOSFET
• 5页
• 51K

• 3394
• HSK83
• Renesas Technology America, Inc.
• Silicon Epitaxial Planar Diode for High Voltage Switching
• 7页
• 76K

• 3395
• HSM107S
• Renesas Technology America, Inc.
• Silicon Schottky Barrier Diode for System Protection
• 8页
• 79K

• 3396
• HSM1100G
• Microsemi Corporation
• 1 A Schottky Rectifier
• 2页
• 91K

• 3397
• HSM1100J
• Microsemi Corporation
• 1 A Schottky Rectifier
• 2页
• 96K

• 3398
• HSM124S
• Renesas Technology America, Inc.
• Silicon Epitaxial Planar Diode for Switching
• 7页
• 75K

• 3399
• HSM126S
• Renesas Technology America, Inc.
• Silicon Schottky Barrier Diode for System Protection
• 8页
• 81K

• 3400
• HSM150
• Microsemi Corporation
• 1 A Schottky Rectifier
• 2页
• 76K