• 4201
• HA8550S
• Hi-Sincerity Microelectronics Corp.
• PNP Epitaxial Planar Transistor
• 4页
• 39K

• 4202
• HA9P2444-5
• Intersil Corporation
• 50 MHz, Selectable, Four Channel Video Operational Amplifier
• 6页
• 544K

• 4203
• HA9P2546-5
• Intersil Corporation
• 30 MHz, Voltage Output, Two Quadrant Analog Multiplier
• 16页
• 719K

• 4204
• HA9P2556-9
• Intersil Corporation
• 57 MHz, Wideband, Four Quadrant, Voltage Output Analog Multiplier
• 15页
• 245K

• 4205
• HA9P4741-9
• Intersil Corporation
• Quad, 3.5 MHz, Operational Amplifier
• 6页
• 64K

• 4206
• HA9P5002-5
• Intersil Corporation
• Buffer, Amplifier
• 13页
• 822K

• 4207
• HA9P5002-9
• Intersil Corporation
• Buffer, Amplifier
• 13页
• 822K

• 4208
• HA9P5127-5
• Intersil Corporation
• 8.5 MHz, Ultra-Low Noise Precision Operational Amplifier
• 9页
• 618K

• 4209
• HA9P5147-9
• Intersil Corporation
• 120 MHz, Ultra-Low Noise Precision Operational Amplifier
• 11页
• 561K

• 4210
• HA9P5195-5
• Intersil Corporation
• 150MHz, Fast Settling Operational Amplifier
• 8页
• 88K

• 4211
• HA9P5221-5
• Intersil Corporation
• 100MHz, Low Noise, Precision Operational Amplifier
• 12页
• 700K

• 4212
• HA9P5320-5
• Intersil Corporation
• Sample-Hold Amplifier
• 7页
• 505K

• 4213
• HA9P5320-9
• Intersil Corporation
• Sample-Hold Amplifier
• 7页
• 505K

• 4214
• HAD825
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 3页
• 30K

• 4215
• HAD825SP
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 2页
• 19K

• 4216
• HAD826
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 3页
• 35K

• 4217
• HAD826SP
• Hi-Sincerity Microelectronics Corp.
• NPN Epitaxial Planar Transistor
• 3页
• 28K

• 4218
• HYB314400BJ-50
• Infineon Technologies Corporation
• 1M x 4-Bit Dynamic RAM
• 25页
• 126K

• 4219
• HYB314400BJ-60
• Infineon Technologies Corporation
• 1M x 4-Bit Dynamic RAM
• 25页
• 126K

• 4220
• HYB5116165BJ-50
• Infineon Technologies Corporation
• 1M x 16-Bit Dynamic RAM 4k Refresh (Hyper Page Mode- EDO)
• 26页
• 269K

• 4221
• HYB5116165BJ-60
• Infineon Technologies Corporation
• 1M x 16-Bit Dynamic RAM 4k Refresh (Hyper Page Mode- EDO)
• 26页
• 269K

• 4222
• HYB5116165BJ-70
• Infineon Technologies Corporation
• 1M x 16-Bit Dynamic RAM 4k Refresh (Hyper Page Mode- EDO)
• 26页
• 269K

• 4223
• HYB5118165BJ-50
• Infineon Technologies Corporation
• 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode- EDO)
• 26页
• 269K

• 4224
• HYB5118165BJ-60
• Infineon Technologies Corporation
• 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode- EDO)
• 26页
• 269K

• 4225
• HYB5118165BJ-70
• Infineon Technologies Corporation
• 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode- EDO)
• 26页
• 269K

• 4226
• HYB514405BJ-50
• Infineon Technologies Corporation
• 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
• 25页
• 1361K

• 4227
• HYB514405BJ-60
• Infineon Technologies Corporation
• 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
• 25页
• 1361K

• 4228
• HYB514405BJ-70
• Infineon Technologies Corporation
• 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
• 25页
• 1361K

• 4229
• HYB514405BJL-50
• Infineon Technologies Corporation
• 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
• 25页
• 1361K

• 4230
• HYB514405BJL-60
• Infineon Technologies Corporation
• 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
• 25页
• 1361K

• 4231
• HYB514405BJL-70
• Infineon Technologies Corporation
• 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
• 25页
• 1361K

• 4232
• HYB514800BJ-60
• Infineon Technologies Corporation
• 512kx8-Bit Dynamic RAM
• 22页
• 211K

• 4233
• HYB514800BJ-70
• Infineon Technologies Corporation
• 512kx8-Bit Dynamic RAM
• 22页
• 211K

• 4234
• HYB514800BJ-80
• Infineon Technologies Corporation
• 512kx8-Bit Dynamic RAM
• 22页
• 211K

• 4235
• H11B1
• Shenzhen Yongerjia Electronic Co., Ltd.
• Zener Diode
• 6页
• 825K

• 4236
• HAF1001
• Renesas Technology America, Inc.
• Silicon P Channel MOS FET Power Switching/Over Temperature Shut-Down Capability
• 12页
• 67K

• 4237
• HAF1002(L)
• Renesas Technology America, Inc.
• Silicon P Channel MOS FET Power Switching
• 9页
• 56K

• 4238
• HAF1002(S)
• Renesas Technology America, Inc.
• Silicon P Channel MOS FET Power Switching
• 9页
• 56K

• 4239
• HAF1002L
• Renesas Technology America, Inc.
• Silicon P Channel MOS FET Series Power Switching
• 5页
• 35K

• 4240
• HAF1002S
• Renesas Technology America, Inc.
• Silicon P Channel MOS FET Series Power Switching
• 5页
• 35K

• 4241
• HAF2001
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Power Switching
• 12页
• 69K

• 4242
• HAF2002
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Power Switching
• 9页
• 53K

• 4243
• HAF2005
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Power Switching
• 12页
• 115K

• 4244
• HAF2007(L)
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Power Switching
• 13页
• 125K

• 4245
• HAF2007(S)
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Power Switching
• 13页
• 125K

• 4246
• HAF2007L
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Series Power Switching
• 10页
• 49K

• 4247
• HAF2007S
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Series Power Switching
• 10页
• 49K

• 4248
• HAF2011(L)
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Power Switching
• 10页
• 62K

• 4249
• HAF2011(S)
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Power Switching
• 10页
• 62K

• 4250
• HAF2011L
• Renesas Technology America, Inc.
• Silicon N Channel MOS FET Series Power Switching
• 6页
• 98K