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IC型号:
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电源类
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多媒体类
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硅控整流器(晶闸管)
NO.
IC型号
描述
厂家
页数
文件大小
3301
K4H560438B-TCA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3302
K4H560438B-TCA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3303
K4H560438B-TCA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3304
K4H560438B-TCB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3305
K4H560438B-TCB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3306
K4H560438B-TLA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3307
K4H560438B-TLA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3308
K4H560438B-TLA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3309
K4H560438B-TLA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3310
K4H560438B-TLB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3311
K4H560438B-TLB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3312
K4H560838B-TCA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3313
K4H560838B-TCA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3314
K4H560838B-TCA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3315
K4H560838B-TCA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3316
K4H560838B-TCB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3317
K4H560838B-TCB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3318
K4H560838B-TLA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3319
K4H560838B-TLA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3320
K4H560838B-TLA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3321
K4H560838B-TLA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3322
K4H560838B-TLB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3323
K4H560838B-TLB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3324
K4H561638B-TCA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3325
K4H561638B-TCA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3326
K4H561638B-TCA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3327
K4H561638B-TCA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3328
K4H561638B-TCB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3329
K4H561638B-TCB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3330
K4H561638B-TLA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3331
K4H561638B-TLA0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3332
K4H561638B-TLA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3333
K4H561638B-TLA2
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3334
K4H561638B-TLB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
426K
3335
K4H561638B-TLB0
Samsung Semiconductor, Inc.
256Mb DDR SDRAM
52页
322K
3336
K6R4004V1D-JC08
Samsung Semiconductor, Inc.
1M x 4 Bit (with Inverted OE) High-Speed CMOS Static RAM
9页
177K
3337
K6R4004V1D-JC10
Samsung Semiconductor, Inc.
1M x 4 Bit (with Inverted OE) High-Speed CMOS Static RAM
9页
177K
3338
K6R4004V1D-JI08
Samsung Semiconductor, Inc.
1M x 4 Bit (with Inverted OE) High-Speed CMOS Static RAM
9页
177K
3339
K6R4004V1D-JI10
Samsung Semiconductor, Inc.
1M x 4 Bit (with Inverted OE) High-Speed CMOS Static RAM
9页
177K
3340
KBJ4005G
Diodes, Inc.
4.0 A Glass Passivated Bridge Rectifier
2页
51K
3341
KBJ401G
Diodes, Inc.
4.0 A Glass Passivated Bridge Rectifier
2页
51K
3342
KBJ402G
Diodes, Inc.
4.0 A Glass Passivated Bridge Rectifier
2页
51K
3343
KBJ404G
Diodes, Inc.
4.0 A Glass Passivated Bridge Rectifier
2页
51K
3344
KBJ406G
Diodes, Inc.
4.0 A Glass Passivated Bridge Rectifier
2页
51K
3345
KBJ408G
Diodes, Inc.
4.0 A Glass Passivated Bridge Rectifier
2页
51K
3346
KBJ410G
Diodes, Inc.
4.0 A Glass Passivated Bridge Rectifier
2页
51K
3347
KBJ6005G
Lite-On Technology Corporation
Glass Passivated Bridge Rectifier
2页
52K
3348
KBJ6005G
Diodes, Inc.
6.0 A Glass Passivated Bridge Rectifier
2页
52K
3349
KBJ601G
Diodes, Inc.
6.0 A Glass Passivated Bridge Rectifier
2页
52K
3350
KBJ601G
Lite-On Technology Corporation
Glass Passivated Bridge Rectifier
2页
52K
共 6697 | 134 页 | 第 67 页 |
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