• 23451
• K474M20Y5VF5UL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23452
• K474Z20Y5VF53H2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23453
• K474Z20Y5VF53H5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23454
• K474Z20Y5VF53L2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23455
• K474Z20Y5VF5TH2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23456
• K474Z20Y5VF5TH5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23457
• K474Z20Y5VF5TL2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23458
• K474Z20Y5VF5TL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23459
• K474Z20Y5VF5UH2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23460
• K474Z20Y5VF5UL2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23461
• K474Z20Y5VF5UL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23462
• K4C560838C-TCD3
• Samsung Semiconductor, Inc.
• 256 MBit Network-DRAM
• 42页
• 880K

• 23463
• K4C560838C-TCD4
• Samsung Semiconductor, Inc.
• 256 MBit Network-DRAM
• 42页
• 880K

• 23464
• K4C560838C-TCDA
• Samsung Semiconductor, Inc.
• 256 MBit Network-DRAM
• 42页
• 880K

• 23465
• K4C561638C-TCD3
• Samsung Semiconductor, Inc.
• 256 MBit Network-DRAM
• 42页
• 880K

• 23466
• K4C561638C-TCD4
• Samsung Semiconductor, Inc.
• 256 MBit Network-DRAM
• 42页
• 880K

• 23467
• K4C561638C-TCDA
• Samsung Semiconductor, Inc.
• 256 MBit Network-DRAM
• 42页
• 880K

• 23468
• K4D261638F-TC25
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-Directional Data Strobe and
• 18页
• 225K

• 23469
• K4D261638F-TC2A
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-Directional Data Strobe and
• 18页
• 225K

• 23470
• K4D261638F-TC33
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-Directional Data Strobe and
• 18页
• 225K

• 23471
• K4D261638F-TC36
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-Directional Data Strobe and
• 18页
• 225K

• 23472
• K4D261638F-TC40
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-Directional Data Strobe and
• 18页
• 225K

• 23473
• K4D261638F-TC50
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-Directional Data Strobe and
• 18页
• 225K

• 23474
• K104M15X7RF53H2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23475
• K104M15X7RF53H5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23476
• K104M15X7RF53L5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23477
• K104M15X7RF5TH2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23478
• K104M15X7RF5TH5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23479
• K104M15X7RF5TL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23480
• K104M15X7RF5UH2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23481
• K104M15X7RF5UH5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23482
• K104M15X7RF5UL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23483
• K104M15Y5VF53H2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23484
• K104M15Y5VF53H5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23485
• K104M15Y5VF53L2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23486
• K104M15Y5VF53L5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23487
• K104M15Y5VF5TH5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23488
• K104M15Y5VF5TL2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23489
• K104M15Y5VF5TL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23490
• K104M15Y5VF5UH2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23491
• K104M15Y5VF5UL2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23492
• K104M15Y5VH53H2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23493
• K104M15Y5VH53H5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23494
• K4E151611C-J-45
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
• 35页
• 553K

• 23495
• K4E151611C-J-50
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
• 35页
• 553K

• 23496
• K4E151611C-J-60
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
• 35页
• 553K

• 23497
• K4E151611C-T-45
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
• 35页
• 553K

• 23498
• K4E151611C-T-50
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
• 35页
• 553K

• 23499
• K4E151611C-T-60
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
• 35页
• 553K

• 23500
• K4E151611D-J-45
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
• 35页
• 553K