• 23301
• K4E640812B-TC-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23302
• K4E640812B-TC-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23303
• K4E640812B-TL-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23304
• K4E640812B-TL-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23305
• K4E640812B-TL-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23306
• K4E660812B-JC-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23307
• K4E660812B-JC-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23308
• K4E660812B-JC-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23309
• K4E660812B-JL-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23310
• K4E660812B-JL-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23311
• K4E660812B-JL-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23312
• K4E660812B-TC-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23313
• K4E660812B-TC-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23314
• K4E660812B-TC-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23315
• K4E660812B-TL-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23316
• K4E660812B-TL-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23317
• K4E660812B-TL-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 416K

• 23318
• K104Z15Y5VF5TH2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23319
• K104Z15Y5VF5TH5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23320
• K104Z15Y5VF5TL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23321
• K104Z15Y5VF5UH2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23322
• K104Z15Y5VF5UL2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23323
• K104Z15Y5VF5UL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23324
• K104Z15Y5VH53H2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23325
• K104Z15Y5VH53H5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23326
• K104Z15Y5VH53L5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23327
• K104Z15Y5VH5TH2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23328
• K104Z15Y5VH5TH5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23329
• K104Z15Y5VH5TL2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23330
• K104Z15Y5VH5TL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23331
• K104Z15Y5VH5UH2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23332
• K104Z15Y5VH5UH5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23333
• K104Z15Y5VH5UL2
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23334
• K104Z15Y5VH5UL5
• Vishay Intertechnology, Inc.
• Dipped Radial Multilayer Ceramic Capacitor
• 页
• K

• 23335
• K105
• Frontier Electronics Co. Ltd.
• SIDAC (95 - 270 VOLTS)
• 2页
• 76K

• 23336
• K1050B
• Galaxy Semiconductor (Changzhou) Co., Ltd.
• SIDAC
• 页
• K

• 23337
• K1050D
• Galaxy Semiconductor (Changzhou) Co., Ltd.
• SIDAC
• 页
• K

• 23338
• K4F151611D-J-50
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
• 34页
• 528K

• 23339
• K4F151611D-J-60
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
• 34页
• 528K

• 23340
• K4F151611D-T-50
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
• 34页
• 528K

• 23341
• K4F151611D-T-60
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
• 34页
• 528K

• 23342
• K4F151612D-J-50
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
• 34页
• 528K

• 23343
• K4F151612D-J-60
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
• 34页
• 528K

• 23344
• K4F151612D-T-50
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
• 34页
• 528K

• 23345
• K4F151612D-T-60
• Samsung Semiconductor, Inc.
• 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
• 34页
• 528K

• 23346
• K4F160411D-B-50
• Samsung Semiconductor, Inc.
• 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 225K

• 23347
• K4F160411D-B-60
• Samsung Semiconductor, Inc.
• 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 225K

• 23348
• K4F160411D-F-50
• Samsung Semiconductor, Inc.
• 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 225K

• 23349
• K4F160411D-F-60
• Samsung Semiconductor, Inc.
• 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 225K

• 23350
• K4F160412D-B-50
• Samsung Semiconductor, Inc.
• 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 225K