• 23101
• K4M28163LF-BS75
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23102
• K4M28163LF-RC1H
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23103
• K4M28163LF-RC1L
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23104
• K4M28163LF-RC75
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23105
• K4M28163LF-RE1H
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23106
• K4M28163LF-RE1L
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23107
• K4M28163LF-RE75
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23108
• K4M28163LF-RL1H
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23109
• K4M28163LF-RL1L
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23110
• K4M28163LF-RL75
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23111
• K4M28163LF-RN1H
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23112
• K4M28163LF-RN1L
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23113
• K4M28163LF-RN75
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23114
• K4M28163LF-RR1H
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23115
• K4M28163LF-RR1L
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23116
• K4M28163LF-RR75
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23117
• K4M28163LF-RS1H
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23118
• K4M28163LF-RS1L
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23119
• K4M28163LF-RS75
• Samsung Semiconductor, Inc.
• 2M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA
• 12页
• 115K

• 23120
• K1100G
• Teccor Electronics Inc.
• SIDAC
• 6页
• 341K

• 23121
• K1100G
• Galaxy Semiconductor (Changzhou) Co., Ltd.
• SIDAC
• 页
• K

• 23122
• K1100G
• Teccor Electronics Inc.
• SIDAC
• 6页
• 341K

• 23123
• K1100G
• Teccor Electronics Inc.
• SIDAC (95-330 Volts)
• 6页
• 268K

• 23124
• K1100S
• Teccor Electronics Inc.
• SIDAC (95-330 Volts)
• 6页
• 268K

• 23125
• K1100S
• Teccor Electronics Inc.
• SIDAC
• 6页
• 341K

• 23126
• K1100S
• Teccor Electronics Inc.
• SIDAC
• 6页
• 341K

• 23127
• K11041
• Champion Technologies, Inc.
• Clock Driver For 32-Bit Micro-processors
• 2页
• 118K

• 23128
• K11041M
• Champion Technologies, Inc.
• Clock Driver For 32-Bit Micro-processors
• 2页
• 118K

• 23129
• K4R271669B-MCG6
• Samsung Semiconductor, Inc.
• 128Mbit RDRAM(B-die) 256K x 16 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23130
• K4R271669B-MCK7
• Samsung Semiconductor, Inc.
• 128Mbit RDRAM(B-die) 256K x 16 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23131
• K4R271669B-MCK8
• Samsung Semiconductor, Inc.
• 128Mbit RDRAM(B-die) 256K x 16 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23132
• K4R271669B-NCG6
• Samsung Semiconductor, Inc.
• 128Mbit RDRAM(B-die) 256K x 16 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23133
• K4R271669B-NCK7
• Samsung Semiconductor, Inc.
• 128Mbit RDRAM(B-die) 256K x 16 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23134
• K4R271669B-NCK8
• Samsung Semiconductor, Inc.
• 128Mbit RDRAM(B-die) 256K x 16 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23135
• K4R271669E-RCS8
• Samsung Semiconductor, Inc.
• 256k x 16 Bit x 32 Banks Direct RDRAM
• 20页
• 290K

• 23136
• K4R271669E-TCS8
• Samsung Semiconductor, Inc.
• 256k x 16 Bit x 32 Banks Direct RDRAM
• 20页
• 290K

• 23137
• K4R271669F-RCS8
• Samsung Semiconductor, Inc.
• 256k x 16 Bit x 32 Banks Direct RDRAM
• 20页
• 292K

• 23138
• K4R271669F-TCS8
• Samsung Semiconductor, Inc.
• 256k x 16 Bit x 32 Banks Direct RDRAM
• 20页
• 292K

• 23139
• K4R441869B-MCG6
• Samsung Semiconductor, Inc.
• 144Mbit RDRAM(B-die) 256K x 18 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23140
• K4R441869B-MCK7
• Samsung Semiconductor, Inc.
• 144Mbit RDRAM(B-die) 256K x 18 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23141
• K4R441869B-MCK8
• Samsung Semiconductor, Inc.
• 144Mbit RDRAM(B-die) 256K x 18 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23142
• K4R441869B-NCG6
• Samsung Semiconductor, Inc.
• 144Mbit RDRAM(B-die) 256K x 18 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23143
• K4R441869B-NCK7
• Samsung Semiconductor, Inc.
• 144Mbit RDRAM(B-die) 256K x 18 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23144
• K4R441869B-NCK8
• Samsung Semiconductor, Inc.
• 144Mbit RDRAM(B-die) 256K x 18 bit x 32s banks Direct RDRAM
• 20页
• 306K

• 23145
• K4S160822DT-G/F10
• Samsung Semiconductor, Inc.
• 1M x 8Bit x 2 Banks Synchronous DRAM
• 46页
• 1183K

• 23146
• K4S160822DT-G/F7
• Samsung Semiconductor, Inc.
• 1M x 8Bit x 2 Banks Synchronous DRAM
• 46页
• 1183K

• 23147
• K4S160822DT-G/F8
• Samsung Semiconductor, Inc.
• 1M x 8Bit x 2 Banks Synchronous DRAM
• 46页
• 1183K

• 23148
• K4S160822DT-G/FH
• Samsung Semiconductor, Inc.
• 1M x 8Bit x 2 Banks Synchronous DRAM
• 46页
• 1183K

• 23149
• K4S160822DT-G/FL
• Samsung Semiconductor, Inc.
• 1M x 8Bit x 2 Banks Synchronous DRAM
• 46页
• 1183K

• 23150
• K4S161622H-TC55
• Samsung Semiconductor, Inc.
• 512k x 16 Bit x 2 Banks SDRAM
• 11页
• 108K