• 10151
• HI5810JIJ
• Intersil Corporation
• CMOS 10 Microsecond, 12-Bit, Sampling A/D Converter with Internal Track and Hold
• 12页
• 423K

• 10152
• HI5810JIP
• Intersil Corporation
• CMOS 10 Microsecond, 12-Bit, Sampling A/D Converter with Internal Track and Hold
• 12页
• 423K

• 10153
• HI5810KIB
• Intersil Corporation
• CMOS 10 Microsecond, 12-Bit, Sampling A/D Converter with Internal Track and Hold
• 12页
• 423K

• 10154
• HI5810KIJ
• Intersil Corporation
• CMOS 10 Microsecond, 12-Bit, Sampling A/D Converter with Internal Track and Hold
• 12页
• 423K

• 10155
• HI5810KIP
• Intersil Corporation
• CMOS 10 Microsecond, 12-Bit, Sampling A/D Converter with Internal Track and Hold
• 12页
• 423K

• 10156
• HLMP-3300
• Fairchild Semiconductor
• T-1 3/4 (5 mm) SOLID STATE LAMP
• 4页
• 100K

• 10157
• HLMP-3316
• Fairchild Semiconductor
• T-1 3/4 (5 mm) SOLID STATE LAMP
• 4页
• 100K

• 10158
• HM62G36256ABP-30
• Renesas Technology America, Inc.
• 9M Synchronous Late Write Fast Static RAM (256 kWord x 36 Bit)
• 26页
• 149K

• 10159
• HM62G36256ABP-33
• Renesas Technology America, Inc.
• 9M Synchronous Late Write Fast Static RAM (256 kWord x 36 Bit)
• 26页
• 149K

• 10160
• HM62G36256ABP-40
• Renesas Technology America, Inc.
• 9M Synchronous Late Write Fast Static RAM (256 kWord x 36 Bit)
• 26页
• 149K

• 10161
• H6001
• MF Electronics
• Thru-Hole/ Gull Wing, 5V 1 MHz to 125 MHz
• 4页
• 159K

• 10162
• H6001
• MF Electronics
• Thru-Hole/ Gull Wing, 5V 1 MHz to 175 MHz
• 4页
• 159K

• 10163
• H6321-100MG
• MF Electronics
• Thru-Hole/ Gull Wing, 3.3V 1 MHz to 100 MHz
• 3页
• 138K

• 10164
• H6321-XX.XXXM
• MF Electronics
• VOLTAGE CONTROLLED OSCILLATOR
• 3页
• 138K

• 10165
• H6321-XX.XXXMG
• MF Electronics
• VOLTAGE CONTROLLED OSCILLATOR
• 3页
• 138K

• 10166
• H6322-100MG
• MF Electronics
• Thru-Hole/ Gull Wing, 3.3V 1 MHz to 100 MHz
• 3页
• 138K

• 10167
• H6322-XX.XXXM
• MF Electronics
• VOLTAGE CONTROLLED OSCILLATOR
• 3页
• 138K

• 10168
• H6322-XX.XXXMG
• MF Electronics
• VOLTAGE CONTROLLED OSCILLATOR
• 3页
• 138K

• 10169
• HPI-2464
• Kodenshi Korea Corporation
• PIN PHOTODIODE
• 4页
• 140K

• 10170
• HPI-2464R5
• Kodenshi Korea Corporation
• PIN PHOTODIODE
• 4页
• 140K

• 10171
• HPI-6FFR4
• Kodenshi Korea Corporation
• PIN PHOTODIODE
• 4页
• 140K

• 10172
• HSC119
• Renesas Technology America, Inc.
• Silicon Epitaxial Planar Diode for High Speed Switching
• 7页
• 74K

• 10173
• HA17902
• Renesas Technology America, Inc.
• Quad Operational Amplifier
• 16页
• 83K

• 10174
• HA17902FP
• Renesas Technology America, Inc.
• Quad Operational Amplifier
• 16页
• 83K

• 10175
• HA17902FPJ
• Renesas Technology America, Inc.
• Quad Operational Amplifier
• 16页
• 83K

• 10176
• HA17902FPK
• Renesas Technology America, Inc.
• Quad Operational Amplifier
• 16页
• 83K

• 10177
• HA17902P
• Renesas Technology America, Inc.
• Quad Operational Amplifier
• 16页
• 83K

• 10178
• HA17902PJ
• Renesas Technology America, Inc.
• Quad Operational Amplifier
• 16页
• 83K

• 10179
• HUF76009P3T
• Fairchild Semiconductor
• 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFET
• 12页
• 252K

• 10180
• HUF76013D3S
• Fairchild Semiconductor
• 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFET
• 10页
• 195K

• 10181
• HUF76013D3ST
• Fairchild Semiconductor
• 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFET
• 10页
• 195K

• 10182
• HUF76013P3
• Fairchild Semiconductor
• 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFET
• 10页
• 195K

• 10183
• HYB25D128323C-3.3
• Infineon Technologies Corporation
• Specialty DRAM Graphics RAM
• 6页
• 165K

• 10184
• HYB25D128323C-3.7
• Infineon Technologies Corporation
• Specialty DRAM Graphics RAM
• 6页
• 165K

• 10185
• HYB25D128323C-5
• Infineon Technologies Corporation
• Specialty DRAM Graphics RAM
• 6页
• 165K

• 10186
• HYS64D32000GU-7
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10187
• HYS64D32000GU-7.5
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10188
• HYS64D32000GU-8
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10189
• HYS64D64020GU-7
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10190
• HYS64D64020GU-7.5
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10191
• HYS64D64020GU-8
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10192
• HYS72D32000GU-7
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10193
• HYS72D32000GU-7.5
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10194
• HYS72D32000GU-8
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10195
• HYS72D64020GU-7
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10196
• HYS72D64020GU-7.5
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10197
• HYS72D64020GU-8
• Infineon Technologies Corporation
• Unbuffered DDR-I SDRAM-Module
• 21页
• 211K

• 10198
• HBFP-0405-BLK
• Agilent Technologies
• High Performance Isolated Collector Silicon Bipolar Transistor
• 10页
• 77K

• 10199
• HBFP-0405-TR1
• Agilent Technologies
• High Performance Isolated Collector Silicon Bipolar Transistor
• 10页
• 77K

• 10200
• HBFP-0405-TR2
• Agilent Technologies
• High Performance Isolated Collector Silicon Bipolar Transistor
• 10页
• 77K