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电源类
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功率场效应管
NO.
IC型号
描述
厂家
页数
文件大小
8251
K4S64323LF-DG15
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8252
K4S64323LF-DG1H
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8253
K4S64323LF-DG1L
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8254
K4S64323LF-DG75
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8255
K4S64323LF-DS15
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8256
K4S64323LF-DS1H
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8257
K4S64323LF-DS1L
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8258
K4S64323LF-DS75
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8259
K4S64323LF-SG15
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8260
K4S64323LF-SG1H
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8261
K4S64323LF-SG1L
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8262
K4S64323LF-SG75
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8263
K4S64323LF-SS15
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8264
K4S64323LF-SS1H
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8265
K4S64323LF-SS1L
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8266
K4S64323LF-SS75
Samsung Semiconductor, Inc.
512k x 32 Bit x 4 Banks Mobile SDRAM
8页
64K
8267
K6L0908C2A-GB55
Samsung Semiconductor, Inc.
64Kx8 bit Low Power CMOS Static RAM
9页
143K
8268
K6L0908C2A-GB70
Samsung Semiconductor, Inc.
64Kx8 bit Low Power CMOS Static RAM
9页
143K
8269
K6L0908C2A-GF70
Samsung Semiconductor, Inc.
64Kx8 bit Low Power CMOS Static RAM
9页
143K
8270
K6L0908C2A-GL55
Samsung Semiconductor, Inc.
64Kx8 bit Low Power CMOS Static RAM
9页
143K
8271
K6L0908C2A-GL70
Samsung Semiconductor, Inc.
64Kx8 bit Low Power CMOS Static RAM
9页
143K
8272
K6L0908C2A-GP70
Samsung Semiconductor, Inc.
64Kx8 bit Low Power CMOS Static RAM
9页
143K
8273
K6L0908C2A-TB55
Samsung Semiconductor, Inc.
64Kx8 bit Low Power CMOS Static RAM
9页
143K
8274
K6L0908C2A-TB70
Samsung Semiconductor, Inc.
64Kx8 bit Low Power CMOS Static RAM
9页
143K
8275
K6L0908C2A-TF70
Samsung Semiconductor, Inc.
64Kx8 bit Low Power CMOS Static RAM
9页
143K
8276
K6R4008C1D-JC10
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
208K
8277
K6R4008C1D-JI10
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
208K
8278
K6R4008C1D-TC10
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
208K
8279
K6R4008C1D-TI10
Samsung Semiconductor, Inc.
512k x 8 Bit High-Speed CMOS Static RAM
10页
208K
8280
K7A161800A-14
Samsung Semiconductor, Inc.
1Mx18 Synchronous SRAM
5页
67K
8281
K7A161800A-15
Samsung Semiconductor, Inc.
1Mx18 Synchronous SRAM
5页
67K
8282
K7A161800A-16
Samsung Semiconductor, Inc.
1Mx18 Synchronous SRAM
5页
67K
8283
K7A161801A-14
Samsung Semiconductor, Inc.
1M x 18 Synchronous Pipelined Burst SRAM
3页
48K
8284
K7A161801A-15
Samsung Semiconductor, Inc.
1M x 18 Synchronous Pipelined Burst SRAM
3页
48K
8285
K7A161801A-16
Samsung Semiconductor, Inc.
1M x 18 Synchronous Pipelined Burst SRAM
3页
48K
8286
K7A163600A-14
Samsung Semiconductor, Inc.
512Kx36 Synchronous SRAM
5页
67K
8287
K7A163600A-15
Samsung Semiconductor, Inc.
512Kx36 Synchronous SRAM
5页
67K
8288
K7A163600A-16
Samsung Semiconductor, Inc.
512Kx36 Synchronous SRAM
5页
67K
8289
K7A163601A-14
Samsung Semiconductor, Inc.
512K x 36 Synchronous Pipelined Burst SRAM
3页
48K
8290
K7A163601A-15
Samsung Semiconductor, Inc.
512K x 36 Synchronous Pipelined Burst SRAM
3页
48K
8291
K7A163601A-16
Samsung Semiconductor, Inc.
512K x 36 Synchronous Pipelined Burst SRAM
3页
48K
8292
K7B161825A-65
Samsung Semiconductor, Inc.
1Mx18 Synchronous Burst SRAM
5页
67K
8293
K7B161825A-75
Samsung Semiconductor, Inc.
1Mx18 Synchronous Burst SRAM
5页
67K
8294
K7B161825A-85
Samsung Semiconductor, Inc.
1Mx18 Synchronous Burst SRAM
5页
67K
8295
K7B161825A-90
Samsung Semiconductor, Inc.
1Mx18 Synchronous Burst SRAM
5页
67K
8296
K7B163625A-65
Samsung Semiconductor, Inc.
512Kx36 Synchronous Burst SRAM
5页
67K
8297
K7B163625A-75
Samsung Semiconductor, Inc.
512Kx36 Synchronous Burst SRAM
5页
67K
8298
K7B163625A-85
Samsung Semiconductor, Inc.
512Kx36 Synchronous Burst SRAM
5页
67K
8299
K7B163625A-90
Samsung Semiconductor, Inc.
512Kx36 Synchronous Burst SRAM
5页
67K
8300
K7J161882B-FC16
Samsung Semiconductor, Inc.
1M x 18 Bit DDR II SIO b2 SRAM
17页
169K
共 17025 | 341 页 | 第 166 页 |
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