• 13301
• KP018L781001
• AFL Telecommunications
• indoor/outdoor plenum tight buffered cable
• 17页
• 1394K

• 13302
• KP0245851001
• AFL Telecommunications
• indoor/outdoor plenum tight buffered cable
• 17页
• 1394K

• 13303
• KP0246851001
• AFL Telecommunications
• indoor/outdoor plenum tight buffered cable
• 17页
• 1394K

• 13304
• KP0247851001
• AFL Telecommunications
• indoor/outdoor plenum tight buffered cable
• 17页
• 1394K

• 13305
• KP0248851001
• AFL Telecommunications
• indoor/outdoor plenum tight buffered cable
• 17页
• 1394K

• 13306
• KP0249851001
• AFL Telecommunications
• indoor/outdoor plenum tight buffered cable
• 17页
• 1394K

• 13307
• KP024L851001
• AFL Telecommunications
• indoor/outdoor plenum tight buffered cable
• 17页
• 1394K

• 13308
• KSD560
• Fairchild Semiconductor
• NPN Epitaxial Silicon Darlington Transistor
• 4页
• 42K

• 13309
• KSE340
• Fairchild Semiconductor
• NPN Epitaxial Silicon Transistor
• 4页
• 38K

• 13310
• K34100B1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13311
• K34100Z1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13312
• K34120B1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13313
• K34120Z1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13314
• K34160B1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13315
• K34160Z1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13316
• K3420B1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13317
• K3420Z1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13318
• K3440B1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13319
• K3440Z1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13320
• K3460B1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13321
• K3460Z1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13322
• K3480B1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13323
• K3480Z1EB1
• Microsemi Corporation
• Silicon Power Rectifier Assemblies
• 3页
• 276K

• 13324
• K4E640412D-JC-45
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13325
• K4E640412D-JC-50
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13326
• K4E640412D-JC-60
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13327
• K4E640412D-JCL-45
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13328
• K4E640412D-JCL-50
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13329
• K4E640412D-JCL-60
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13330
• K4E640412D-TC-45
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13331
• K4E640412D-TC-50
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13332
• K4E640412D-TC-60
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13333
• K4E640412D-TCL-45
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13334
• K4E640412D-TCL-50
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13335
• K4E640412D-TCL-60
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13336
• K4E640812C-JC-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13337
• K4E640812C-JC-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13338
• K4E640812C-JC-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13339
• K4E640812C-JL-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13340
• K4E640812C-JL-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13341
• K4E640812C-JL-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13342
• K4E640812C-TC-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13343
• K4E640812C-TC-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13344
• K4E640812C-TC-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13345
• K4E640812C-TL-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13346
• K4E640812C-TL-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13347
• K4E640812C-TL-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13348
• K4E641611D-TC-50
• Samsung Semiconductor, Inc.
• 4M x 16bit CMOS Dynamic RAM with Extended Data Out
• 36页
• 882K

• 13349
• K4E641611D-TC-60
• Samsung Semiconductor, Inc.
• 4M x 16bit CMOS Dynamic RAM with Extended Data Out
• 36页
• 882K

• 13350
• K4E660412D-JC-45
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K