• 13251
• K4E660412D-JC-50
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13252
• K4E660412D-JC-60
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13253
• K4E660412D-JCL-45
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13254
• K4E660412D-JCL-50
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13255
• K4E660412D-JCL-60
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13256
• K4E660412D-TC-45
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13257
• K4E660412D-TC-50
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13258
• K4E660412D-TC-60
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13259
• K4E660412D-TCL-45
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13260
• K4E660412D-TCL-50
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13261
• K4E660412D-TCL-60
• Samsung Semiconductor, Inc.
• 16M x 4bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 415K

• 13262
• K4E660812C-JC-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13263
• K4E660812C-JC-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13264
• K4E660812C-JC-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13265
• K4E660812C-JL-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13266
• K4E660812C-JL-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13267
• K4E660812C-JL-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13268
• K4E660812C-TC-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13269
• K4E660812C-TC-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13270
• K4E660812C-TC-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13271
• K4E660812C-TL-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13272
• K4E660812C-TL-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13273
• K4E660812C-TL-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
• 20页
• 368K

• 13274
• K4E661611D-TC-50
• Samsung Semiconductor, Inc.
• 4M x 16bit CMOS Dynamic RAM with Extended Data Out
• 36页
• 882K

• 13275
• K4E661611D-TC-60
• Samsung Semiconductor, Inc.
• 4M x 16bit CMOS Dynamic RAM with Extended Data Out
• 36页
• 882K

• 13276
• K4H511638D-KCA0
• Samsung Semiconductor, Inc.
• DDP 512 MBit DDR SDRAM
• 12页
• 54K

• 13277
• K4H511638D-KCA2
• Samsung Semiconductor, Inc.
• DDP 512 MBit DDR SDRAM
• 12页
• 54K

• 13278
• K4H511638D-KCB0
• Samsung Semiconductor, Inc.
• DDP 512 MBit DDR SDRAM
• 12页
• 54K

• 13279
• K4H511638D-KCB3
• Samsung Semiconductor, Inc.
• DDP 512 MBit DDR SDRAM
• 12页
• 54K

• 13280
• K4H511638D-KLA0
• Samsung Semiconductor, Inc.
• DDP 512 MBit DDR SDRAM
• 12页
• 54K

• 13281
• K4H511638D-KLA2
• Samsung Semiconductor, Inc.
• DDP 512 MBit DDR SDRAM
• 12页
• 54K

• 13282
• K4H511638D-KLB3
• Samsung Semiconductor, Inc.
• DDP 512 MBit DDR SDRAM
• 12页
• 54K

• 13283
• K4S281633D-RL1H
• Samsung Semiconductor, Inc.
• 8Mx16 SDRAM 54CSP
• 50页
• 712K

• 13284
• K4S281633D-RL1L
• Samsung Semiconductor, Inc.
• 8Mx16 SDRAM 54CSP
• 50页
• 712K

• 13285
• K4S281633D-RL75
• Samsung Semiconductor, Inc.
• 8Mx16 SDRAM 54CSP
• 50页
• 712K

• 13286
• K4S281633D-RN1H
• Samsung Semiconductor, Inc.
• 8Mx16 SDRAM 54CSP
• 50页
• 712K

• 13287
• K4S281633D-RN1L
• Samsung Semiconductor, Inc.
• 8Mx16 SDRAM 54CSP
• 50页
• 712K

• 13288
• K4S281633D-RN75
• Samsung Semiconductor, Inc.
• 8Mx16 SDRAM 54CSP
• 50页
• 712K

• 13289
• K4S281633D-RP1H
• Samsung Semiconductor, Inc.
• 8Mx16 SDRAM 54CSP
• 50页
• 712K

• 13290
• K4S281633D-RP1L
• Samsung Semiconductor, Inc.
• 8Mx16 SDRAM 54CSP
• 50页
• 712K

• 13291
• K4S281633D-RP75
• Samsung Semiconductor, Inc.
• 8Mx16 SDRAM 54CSP
• 50页
• 712K

• 13292
• K6E0808C1E-C10
• Samsung Semiconductor, Inc.
• 32K x 8 Bit High-Speed CMOS Static RAM
• 9页
• 181K

• 13293
• K6E0808C1E-C12
• Samsung Semiconductor, Inc.
• 32K x 8 Bit High-Speed CMOS Static RAM
• 9页
• 181K

• 13294
• K6E0808C1E-C15
• Samsung Semiconductor, Inc.
• 32K x 8 Bit High-Speed CMOS Static RAM
• 9页
• 181K

• 13295
• K6E0808C1E-I10
• Samsung Semiconductor, Inc.
• 32K x 8 Bit High-Speed CMOS Static RAM
• 9页
• 181K

• 13296
• K6E0808C1E-I12
• Samsung Semiconductor, Inc.
• 32K x 8 Bit High-Speed CMOS Static RAM
• 9页
• 181K

• 13297
• K6E0808C1E-I15
• Samsung Semiconductor, Inc.
• 32K x 8 Bit High-Speed CMOS Static RAM
• 9页
• 181K

• 13298
• K6R1004C1D-JC10
• Samsung Semiconductor, Inc.
• 256k x 4 Bit (with Inverted OE) High-Speed CMOS Static RAM
• 9页
• 131K

• 13299
• K6R1004C1D-JC12
• Samsung Semiconductor, Inc.
• 256k x 4 Bit (with Inverted OE) High-Speed CMOS Static RAM
• 9页
• 131K

• 13300
• K6R1004C1D-JI10
• Samsung Semiconductor, Inc.
• 256k x 4 Bit (with Inverted OE) High-Speed CMOS Static RAM
• 9页
• 131K