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您所在的位置： 达普首页 > PDF资料 > 模拟类 > 双极型功率晶体管
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  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 13201
  • K6R1004C1D-JI12
  • Samsung Semiconductor, Inc.
  • 256k x 4 Bit (with Inverted OE) High-Speed CMOS Static RAM
  • 9页
  • 131K
  • 13202
  • K6R1004V1D-JC08
  • Samsung Semiconductor, Inc.
  • 256k x 4 Bit (with inverted OE) High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 129K
  • 13203
  • K6R1004V1D-JC10
  • Samsung Semiconductor, Inc.
  • 256k x 4 Bit (with inverted OE) High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 129K
  • 13204
  • K6R1004V1D-JI08
  • Samsung Semiconductor, Inc.
  • 256k x 4 Bit (with inverted OE) High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 129K
  • 13205
  • K6R1004V1D-JI10
  • Samsung Semiconductor, Inc.
  • 256k x 4 Bit (with inverted OE) High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 129K
  • 13206
  • K6R1008C1D-JC10
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (5.0 V Operating)
  • 9页
  • 176K
  • 13207
  • K6R1008C1D-JC12
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (5.0 V Operating)
  • 9页
  • 176K
  • 13208
  • K6R1008C1D-JI10
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (5.0 V Operating)
  • 9页
  • 176K
  • 13209
  • K6R1008C1D-JI12
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (5.0 V Operating)
  • 9页
  • 176K
  • 13210
  • K6R1008C1D-TC10
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (5.0 V Operating)
  • 9页
  • 176K
  • 13211
  • K6R1008C1D-TC12
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (5.0 V Operating)
  • 9页
  • 176K
  • 13212
  • K6R1008C1D-TI10
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (5.0 V Operating)
  • 9页
  • 176K
  • 13213
  • K6R1008C1D-TI12
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (5.0 V Operating)
  • 9页
  • 176K
  • 13214
  • K6R1008V1D-JC08
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 176K
  • 13215
  • K6R1008V1D-JC10
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 176K
  • 13216
  • K6R1008V1D-JI08
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 176K
  • 13217
  • K6R1008V1D-JI10
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 176K
  • 13218
  • K6R1008V1D-TC08
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 176K
  • 13219
  • K6R1008V1D-TC10
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 176K
  • 13220
  • K6R1008V1D-TI08
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 176K
  • 13221
  • K6R1008V1D-TI10
  • Samsung Semiconductor, Inc.
  • 128k x 8 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 9页
  • 176K
  • 13222
  • K6R1016C1D-EC10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13223
  • K6R1016C1D-EC12
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13224
  • K6R1016C1D-EI10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13225
  • K6R1016C1D-EI12
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13226
  • K6R1016C1D-JC10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13227
  • K6R1016C1D-JC12
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13228
  • K6R1016C1D-JI10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13229
  • K6R1016C1D-JI12
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13230
  • K6R1016C1D-TC10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13231
  • K6R1016C1D-TC12
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13232
  • K6R1016C1D-TI10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13233
  • K6R1016C1D-TI12
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM
  • 11页
  • 259K
  • 13234
  • K6R1016V1D-EC08
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13235
  • K6R1016V1D-EC10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13236
  • K6R1016V1D-EI08
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13237
  • K6R1016V1D-EI10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13238
  • K6R1016V1D-JC08
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13239
  • K6R1016V1D-JC10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13240
  • K6R1016V1D-JI08
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13241
  • K6R1016V1D-JI10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13242
  • K6R1016V1D-TC08
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13243
  • K6R1016V1D-TC10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13244
  • K6R1016V1D-TI08
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13245
  • K6R1016V1D-TI10
  • Samsung Semiconductor, Inc.
  • 64k x 16 Bit High-Speed CMOS Static RAM (3.3 V Operating)
  • 11页
  • 259K
  • 13246
  • K6T0808C1D-DB55
  • Samsung Semiconductor, Inc.
  • 32Kx8 bit Low Power CMOS Static RAM
  • 9页
  • 170K
  • 13247
  • K6T0808C1D-DB70
  • Samsung Semiconductor, Inc.
  • 32Kx8 bit Low Power CMOS Static RAM
  • 9页
  • 170K
  • 13248
  • K6T0808C1D-DL55
  • Samsung Semiconductor, Inc.
  • 32Kx8 bit Low Power CMOS Static RAM
  • 9页
  • 170K
  • 13249
  • K6T0808C1D-DL70
  • Samsung Semiconductor, Inc.
  • 32Kx8 bit Low Power CMOS Static RAM
  • 9页
  • 170K
  • 13250
  • K6T0808C1D-GB55
  • Samsung Semiconductor, Inc.
  • 32Kx8 bit Low Power CMOS Static RAM
  • 9页
  • 170K
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热门型号： LC2400 4SPDX 48VDCSPLITTER 2320296 RS1215-RA PS-415-HG LC1200 PS6020 SBB830-QTY10 B40-8000-PCB PDUMH15 2986122 TLP1210SATG 01C1001JF 02C1001JF SBB1605-1 TLP606 2839570 2839240 BT-M515RD TLP808TEL 2838228 BT05-F250H-03 PS4816 LS606M TLP808 ADC128S102CIMTX 8300SB1 B30-8000-PCB 02T0500JF PS120420 TLM815NS SBB1002-1 SS7619-15 01C5001JF PS-415-HGULTRA 01T5001JF SS7415-15 2811271 TLP725
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