• 11601
• MGP15N38CL
• ON Semiconductor
• Ignition IGBT 15 A, 380 V
• 4页
• 62K

• 11602
• MGP15N40CL
• ON Semiconductor
• Ignition IGBT 15 A, 410 V
• 12页
• 81K

• 11603
• MGP15N43CL
• ON Semiconductor
• Ignition IGBT 15 A, 430 V
• 8页
• 94K

• 11604
• MGP15N60U
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 106K

• 11605
• MGP20N14CL
• ON Semiconductor
• SMARTDISCRETES Internally Clamped, N-Channel IGBT
• 4页
• 60K

• 11606
• MGP20N35CL
• ON Semiconductor
• SMARTDISCRETES Internally Clamped, N-Channel IGBT
• 5页
• 120K

• 11607
• MGP20N60U
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 106K

• 11608
• MGP21N60E
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 108K

• 11609
• MGP3006X
• Infineon Technologies Corporation
• GHz PLL with I 2 C Bus and Four Chip Address
• 21页
• 457K

• 11610
• MGP3006X6
• Infineon Technologies Corporation
• GHz PLL with I 2 C Bus and Four Chip Address
• 21页
• 444K

• 11611
• MGP3006X6
• Infineon Technologies Corporation
• GHz PLL with IIC Bus and Four Chip Addresses
• 21页
• 444K

• 11612
• MGP4N60E
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 107K

• 11613
• MGP4N60ED
• ON Semiconductor
• Insulated Gate Bipolar Transistor with Anti-Parallel Diode
• 6页
• 121K

• 11614
• MGP7N60E
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 105K

• 11615
• MGR1018
• ON Semiconductor
• GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
• 6页
• 151K

• 11616
• MGR2018CT
• ON Semiconductor
• Power Manager Gallium Arsenlde Power Rectifier
• 6页
• 154K

• 11617
• MGR2025CT
• ON Semiconductor
• Power Manager Gallium Arsenlde Power Rectifier
• 6页
• 153K

• 11618
• MGRB1018
• ON Semiconductor
• GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
• 6页
• 153K

• 11619
• MGRB2018CT
• ON Semiconductor
• Power Manager Gallium Arsenlde Power Rectifier
• 6页
• 156K

• 11620
• MGRB2018CTT4
• ON Semiconductor
• Power Manager Gallium Arsenlde Power Rectifier
• 6页
• 156K

• 11621
• MGRB2025CT
• ON Semiconductor
• Power Manager Gallium Arsenlde Power Rectifier
• 6页
• 156K

• 11622
• MGRB2025CTT4
• ON Semiconductor
• Power Manager Gallium Arsenlde Power Rectifier
• 6页
• 156K

• 11623
• MGS-70008
• Agilent Technologies
• Reflective SPDT GaAs MMIC Switch
• 5页
• 53K

• 11624
• MGS-71008
• Agilent Technologies
• Absorptive SPDT GaAs MMIC Switch
• 5页
• 53K

• 11625
• MGS05N60D
• ON Semiconductor
• Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
• 6页
• 138K

• 11626
• MGS13002D
• ON Semiconductor
• Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
• 6页
• 119K

• 11627
• MGSF1P02LT1
• ON Semiconductor
• Power MOSFET 750 mA, 20 V
• 8页
• 82K

• 11628
• MGSF1P02LT3
• ON Semiconductor
• Power MOSFET 750 mA, 20 V
• 8页
• 82K

• 11629
• MGSF2N02ELT1
• ON Semiconductor
• Power MOSFET 2.8 Amps, 20 Volts
• 8页
• 57K

• 11630
• MGSF2N02ELT3
• ON Semiconductor
• Power MOSFET 2.8 Amps, 20 Volts
• 8页
• 57K

• 11631
• MGV12N120D
• ON Semiconductor
• Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate
• 4页
• 83K

• 11632
• MGW12N120
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 122K

• 11633
• MGW12N120D
• ON Semiconductor
• Insulated Gate Bipolar Transistor with Anti-Parallel Diode
• 6页
• 142K

• 11634
• MGW14N60ED
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 123K

• 11635
• MGW20N120
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 124K

• 11636
• MGW20N60D
• ON Semiconductor
• Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
• 6页
• 246K

• 11637
• MGW21N60ED
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 126K

• 11638
• MGY20N120D
• ON Semiconductor
• Insulated Gate Bipolar Transistor with Anti-Parallel Diode
• 6页
• 144K

• 11639
• MGY25N120
• ON Semiconductor
• Insulated Gate Bipolar Transistor
• 6页
• 134K

• 11640
• MGY25N120D
• ON Semiconductor
• Insulated Gate Bipolar Transistor with Anti-Parallel Diode
• 6页
• 142K

• 11641
• MGY30N60D
• ON Semiconductor
• Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
• 6页
• 254K

• 11642
• MGY40N60D
• ON Semiconductor
• Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
• 6页
• 171K

• 11643
• MH005A
• Tyco Electronics Corporation
• Power Module: 4.5 Vdc to 14 Vdc Input, 5 W
• 16页
• 227K

• 11644
• MH005B
• Tyco Electronics Corporation
• Power Module: 4.5 Vdc to 14 Vdc Input, 5 W
• 16页
• 227K

• 11645
• MH005BK
• Tyco Electronics Corporation
• Power Module: 4.5 Vdc to 14 Vdc Input, 5 W
• 16页
• 227K

• 11646
• MH005C
• Tyco Electronics Corporation
• Power Module: 4.5 Vdc to 14 Vdc Input, 5 W
• 16页
• 227K

• 11647
• MH005CL
• Tyco Electronics Corporation
• Power Module: 4.5 Vdc to 14 Vdc Input, 5 W
• 16页
• 227K

• 11648
• MH11
• Mospec Semiconductor Corp.
• High Efficiency Power Rectifier
• 2页
• 135K

• 11649
• MH12
• Mospec Semiconductor Corp.
• High Efficiency Power Rectifier
• 2页
• 135K

• 11650
• MH13
• Mospec Semiconductor Corp.
• High Efficiency Power Rectifier
• 2页
• 135K