• 801
• BB200
• Philips Semiconductors
• Low-Voltage Variable Capacitance Double Diode
• 8页
• 50K

• 802
• BB202
• Philips Semiconductors
• Low-Voltage Variable Capacitance Diode
• 8页
• 51K

• 803
• BB2110DI
• BI Technologies Corporation
• Resistor Networks
• 页
• K

• 804
• BB2110DI13
• BI Technologies Corporation
• Resistor Networks
• 页
• K

• 805
• BB2110DI7
• BI Technologies Corporation
• Resistor Networks
• 页
• K

• 806
• BB301C
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC VHF RF Amplifier
• 11页
• 59K

• 807
• BB301M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC VHF RF Amplifier
• 11页
• 59K

• 808
• BB302C
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC VHF RF Amplifier
• 13页
• 80K

• 809
• BB302M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC VHF RF Amplifier
• 13页
• 77K

• 810
• BB304C
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
• 14页
• 83K

• 811
• BB304M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
• 14页
• 84K

• 812
• BB305C
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
• 14页
• 82K

• 813
• BB305M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
• 14页
• 83K

• 814
• BB3553AM
• Maxim Integrated Products, Inc.
• Very Fast Buffer Amplifier
• 6页
• 236K

• 815
• BB401M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC VHF RF Amplifier
• 9页
• 63K

• 816
• BB402M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC VHF RF Amplifier
• 11页
• 65K

• 817
• BB403M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
• 14页
• 74K

• 818
• BB404M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
• 11页
• 66K

• 819
• BB405M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
• 10页
• 62K

• 820
• BB439
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 406K

• 821
• BB501C
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF RF Amplifier
• 15页
• 77K

• 822
• BB501M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF RF Amplifier
• 15页
• 80K

• 823
• BB502C
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF RF Amplifier
• 15页
• 80K

• 824
• BB502M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF RF Amplifier
• 15页
• 80K

• 825
• BB503C
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF RF Amplifier
• 15页
• 80K

• 826
• BB503M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF RF Amplifier
• 15页
• 80K

• 827
• BB504C
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
• 13页
• 78K

• 828
• BB535
• Infineon Technologies Corporation
• Silicon Tuning Diode
• 4页
• 411K

• 829
• BB545
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 4页
• 410K

• 830
• BB555
• Infineon Technologies Corporation
• Silicon Tuning Diode
• 4页
• 411K

• 831
• BB555-02V
• Infineon Technologies Corporation
• Silicon Tuning Diode
• 4页
• 411K

• 832
• BB565
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 4页
• 410K

• 833
• BB565-02V
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 4页
• 410K

• 834
• BB601M
• Renesas Technology America, Inc.
• Build in Biasing Circuit MOS FET IC UHF RF Amplifier
• 13页
• 64K

• 835
• BB639
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 405K

• 836
• BB639C
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 405K

• 837
• BB640
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 408K

• 838
• BB644
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 403K

• 839
• BB659
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 405K

• 840
• BB659C
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 405K

• 841
• BB659C-02V
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 405K

• 842
• BB664
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 403K

• 843
• BB664-02V
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 403K

• 844
• BB669
• Infineon Technologies Corporation
• Silicon Tuning Diode
• 3页
• 27K

• 845
• BB679-02V
• Infineon Technologies Corporation
• Silicon Variable Capacitance Diode
• 3页
• 73K

• 846
• BB721/D3
• General Semiconductor, Inc.
• Tuner Diode
• 4页
• 127K

• 847
• BB721/D4
• General Semiconductor, Inc.
• Tuner Diode
• 4页
• 127K

• 848
• BB721S/D4
• General Semiconductor, Inc.
• Tuner Diode
• 4页
• 127K

• 849
• BB721S/D5
• General Semiconductor, Inc.
• Tuner Diode
• 4页
• 127K

• 850
• BB729/D3
• General Semiconductor, Inc.
• Tuner Diode
• 3页
• 116K