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  • 电池供电小夜灯电路--Battery-powered Night Lamp
    http://www.ic72.com 发布时间:2010/3/2 14:38:50

        电池供电小夜灯电路--Battery-powered Night Lamp

    达普IC芯片交易网

        1,R2___________1M   1/4W Resistors

        R3_____________47K   1/4W Resistor (optional: see Notes)

        R4____________Photo resistor (any type, optional: see Notes)

        C1____________100nF  63V Polyester Capacitor

        C2____________220?F  25V Electrolytic Capacitor

        D1______________LED  Red 10mm. Ultra-bright (see Notes)

        D2___________1N5819  40V 1A Schottky-barrier Diode (see Notes)

        IC1____________7555 or TS555CN CMos Timer IC

        B1_____________1.5V Battery (AA or AAA cell etc.)

        Device purpose: 

        This circuit is usable as a Night Lamp when a wall mains socket is not available to plug-in an ever running small neon lamp device. In order to ensure minimum battery consumption, one 1.5V cell is used, and a simple voltage doubler drives a pulsating ultra-bright LED: current drawing is less than 500?A.

        An optional Photo resistor switches-off the circuit in daylight or when room lamps illuminate, allowing further current economy.

        This device will run for about 3 months continuously on an ordinary AA sized cell or for around 6 months on an alkaline type cell but, adding the Photo resistor circuitry, running time will be doubled or, very likely, triplicated. 

        Circuit operation: 

        IC1 generates a square wave at about 4Hz frequency. C2 & D2 form a voltage doubler, necessary to raise the battery voltage to a peak value able to drive the LED. 

        Notes: 

        IC1 must be a CMos type: only these devices can safely operate at 1.5V supply or less.

        If you are not needing Photo resistor operation, omit R3 & R4 and connect pin 4 of IC1 to positive supply.

        Ordinary LEDs can be used, but light intensity will be poor.

        An ordinary 1N4148 type diode can be used instead of the 1N5819 Schottky-barrier type diode, but LED intensity will be reduced due to the higher voltage drop.

        Any Schottky-barrier type diode can be used in place of the 1N5819.


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