Tower Group Company收购的子公司Jazz Semiconductor日前宣布，他们将在高成长市场采用SiGe BiCMOS工艺替换GaAs工艺来制造零组件，例如手机的毫米波与前端零组件丶IP与设计功能。相较于GaAs，SiGe提供重要集成与成本效益，在新兴市场，让汽车防碰撞丶相位阵列雷达产品丶HDTV无线传输发挥功能。在上述SiGe解决方案市场当中，Jazz目前与全球前10大IC供应商的一半以上展开了合作。Strategy Analytics统计数字显示，合并毫米波与FEM市场规模将从2009年的4亿美元扩大至2012年的7.5亿美元以上，复合年增率将超过23%，超过其他种类半导体产业的成长率。

　　Due to the cost and manufacturing advantage of SiGe based BiCMOS process, Tower Semiconductor's subsidiary, Jazz Semiconductor is replacing its Gallium Arsenide (GaAs) process for making 

　　components used in mobile phones with its Silicon Germanium (SiGe) BiCMOS process.

　　Market analysis firm, Strategy Analytics has predicted, the combined millimeter wave and Front End Module (FEM) market is estimated to grow 23% (CAGR) from $400 million in year 2009 to over $750 million in year 2012, quite a higher growth compared to other semiconductor devices.

　　Jazz's BiCMOS process is capable of integrating SiGe transistor performing up to 200GHz.

　　"We continue to see migration of GaAs products into SiGe as an exciting growth opportunity for our technology. This transition is largely complete in optical front-end components but just beginning in cellular phone front-ends and millimeter-wave applications," said Dr. Marco Racanelli, Senior Vice President and GM of RF/HPA and Aerospace and Defense Business Groups. "We will continue to invest in high performance processes as well as design enablement infrastructure to speed time-to-market for our customers in these emerging applications."